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单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
PTVA127002EVV1R0XTMA1

PTVA127002EVV1R0XTMA1

RF MOSFET LDMOS 50V H-36275-4

Infineon Technologies

20 -
PTVA127002EVV1R0XTMA1

数据表

- H-36275-4 Bulk Active LDMOS - 16dB 50 V 10µA - 300 mA 1.2GHz ~ 1.4GHz 700W 105 V - H-36275-4 - -
ASC2979C

ASC2979C

RF MOSFET

Amplifier Solutions Corp.

2 -
ASC2979C

数据表

- - Box Active - - 25dB - - 3dB - 1.7GHz ~ 5.9GHz 12dBm - - - - -
BLP15H9S100Z

BLP15H9S100Z

RF MOSFET LDMOS 50V SOT1482-1

Ampleon USA Inc.

3,149 -
BLP15H9S100Z

数据表

- SOT-1482-1 Tape & Reel (TR) Active LDMOS - 19dB 50 V 1.4µA - 30 mA 1.5GHz 100W 106 V - SOT-1482-1 - Surface Mount
BLP15M9S100GZ

BLP15M9S100GZ

RF MOSFET LDMOS 32V SOT1483-1

Ampleon USA Inc.

7,081 -
BLP15M9S100GZ

数据表

BLP SOT-1483-1 Tape & Reel (TR) Active LDMOS Dual, Common Source 18dB 32 V 1.4µA - 900 mA 1.4GHz 100W 65 V - SOT1483-1 - Surface Mount
MRFE6VS25GNR1

MRFE6VS25GNR1

RF MOSFET LDMOS 50V TO270-2

NXP USA Inc.

7,956 -
MRFE6VS25GNR1

数据表

- TO-270BA Tape & Reel (TR) Discontinued at Digi-Key LDMOS - 25.4dB 50 V - - 10 mA 512MHz 25W 133 V - TO-270-2 GULL - Surface Mount
BLP2425M10S250PY

BLP2425M10S250PY

RF MOSFET LDMOS 32V OMP780

Ampleon USA Inc.

8,540 -
BLP2425M10S250PY

数据表

- OMP-780-4F-1 Tape & Reel (TR) Active LDMOS Dual, Common Source 15dB 32 V 2.8µA - 100 mA 2.4GHz ~ 2.5GHz 250W 65 V - OMP-780-4F-1 - Surface Mount
PD57060-E

PD57060-E

RF MOSFET LDMOS 28V POWERSO10

STMicroelectronics

8,833 -
PD57060-E

数据表

- PowerSO-10 Exposed Bottom Pad Tube Active LDMOS - 14.3dB 28 V 7A - 100 mA 945MHz 60W 65 V - 10-PowerSO - -
VRF151

VRF151

RF MOSFET 50V M174

Microchip Technology

8,546 -
VRF151

数据表

- M174 Tray Active MOSFET (Metal Oxide) N-Channel 14dB 50 V 1mA - 250 mA 175MHz 150W 170 V - M174 - -
CGHV1F006S

CGHV1F006S

RF MOSFET HEMT 40V 12DFN

MACOM Technology Solutions

6,231 -
CGHV1F006S

数据表

GaN 12-VFDFN Exposed Pad Tape & Reel (TR) Active HEMT - 16dB 40 V 950mA - 60 mA 6GHz 8W 100 V - 12-DFN (4x3) - -
CGH40010F

CGH40010F

RF MOSFET HEMT 28V 440166

MACOM Technology Solutions

3,519 -
CGH40010F

数据表

GaN 440166 Tray Not For New Designs HEMT - 14.5dB 28 V 3.5A - 200 mA 0Hz ~ 6GHz 12.5W 84 V - 440166 - -
MRFE6VS25LR5

MRFE6VS25LR5

RF MOSFET LDMOS 50V NI360

NXP USA Inc.

1 -
MRFE6VS25LR5

数据表

- NI-360 Tape & Reel (TR) Active LDMOS - 25.9dB 50 V - - 10 mA 512MHz 25W 133 V - NI-360 - Chassis Mount
SD2931-10W

SD2931-10W

RF MOSFET 50V M174

STMicroelectronics

4,900 -
SD2931-10W

数据表

- M174 Tray Active MOSFET (Metal Oxide) N-Channel 15dB 50 V 20A - 250 mA 175MHz 150W 125 V - M174 - -
ART1K6FHU

ART1K6FHU

RF MOSFET LDMOS 55V SOT539A

Ampleon USA Inc.

3,942 -
ART1K6FHU

数据表

ART SOT-539A Tray Active LDMOS Dual, Common Source 28dB 55 V - - 50 mA 1MHz ~ 425MHz 1600W 177 V - SOT539A - Chassis Mount
T2G6003028-FL

T2G6003028-FL

DC-6 GHZ,30W, 28V GAN RF POWER X

Qorvo

3,013 -
T2G6003028-FL

数据表

- 2L-FLG Tray Active HEMT P-Channel 14dB 28 V - - 200 mA 6GHz 30W 100 V - - - Chassis Mount
ART2K0FEU

ART2K0FEU

RF MOSFET LDMOS 65V SOT539AN

Ampleon USA Inc.

9,239 -
ART2K0FEU

数据表

- SOT-539AN Tray Active LDMOS Dual, Common Source 28.9dB 65 V 2.8µA - 100 mA 400MHz 2000W 200 V - SOT539AN - Chassis Mount
BLL9G1214L-600U

BLL9G1214L-600U

RF MOSFET LDMOS 32V SOT502A

Ampleon USA Inc.

3,158 -
BLL9G1214L-600U

数据表

- SOT-502A Tray Active LDMOS - 19dB 32 V 5µA - 400 mA 1.2GHz ~ 1.4GHz 600W 65 V - SOT502A - Chassis Mount
BLS9G3135L-400U

BLS9G3135L-400U

RF MOSFET LDMOS 32V SOT502A

Ampleon USA Inc.

2,073 -
BLS9G3135L-400U

数据表

- SOT-502A Tray Active LDMOS - 12dB 32 V 4µA - 400 mA 3.1GHz ~ 3.5GHz 400W 65 V - SOT502A - Chassis Mount
ARF1501

ARF1501

RF MOSFET 250V T-1

Microchip Technology

1 -
ARF1501

数据表

- T-1 Bulk Active MOSFET (Metal Oxide) N-Channel 17dB 250 V 30A - - 27.12MHz 750W 1000 V - T-1 - -
CG2H30070F

CG2H30070F

RF MOSFET GAN HEMT 28V 440224

MACOM Technology Solutions

6,891 -
CG2H30070F

数据表

GaN 440224 Tray Active GaN HEMT - 12dB 28 V - - 1 A 0Hz ~ 4GHz 75W 120 V - 440224 - -
CGHV96100F2

CGHV96100F2

RF MOSFET HEMT 40V 440210

MACOM Technology Solutions

2,235 -
CGHV96100F2

数据表

GaN 440210 Tray Active HEMT - 10.2dB 40 V 12A - 1 A 7.9GHz ~ 9.6GHz 131W 100 V - 440210 - -
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