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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XLMG3411R070RWHT

XLMG3411R070RWHT

PROTOTYPE

Texas Instruments

5,705 -
XLMG3411R070RWHT

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
JANSR2N7584T1

JANSR2N7584T1

RH MOSFET 200V TO-254AA

Microchip Technology

7,903 -
JANSR2N7584T1

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
IPC60R099P7X7SA1

IPC60R099P7X7SA1

MOSFET N-CH BARE DIE

Infineon Technologies

4,399 -
IPC60R099P7X7SA1

数据表

* - Bulk Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
NTMFS4C022NAT1G

NTMFS4C022NAT1G

MOSFET N-CH 30V 5DFN

onsemi

4,285 -
NTMFS4C022NAT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Ta), 136A (Tc) 4.5V, 10V 1.7mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 45.2 nC @ 10 V 30 V ±20V 3071 pF @ 15 V - - 5-DFN (5x6) (8-SOFL) - 3.1W (Ta), 64W (Tc) -55°C ~ 150°C (TJ)
FDMC6679AZ-P

FDMC6679AZ-P

MOSFET P-CH 30V 11.5A/20A 8MLP

onsemi

6,231 -
FDMC6679AZ-P

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 11.5A (Ta), 20A (Tc) 4.5V, 10V 10mOhm @ 11.5A, 10V Surface Mount 3V @ 250µA 91 nC @ 10 V 30 V ±25V 3970 pF @ 15 V - - 8-WDFN (3.3x3.3) - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ)
FDS8817NZ-G

FDS8817NZ-G

MOSFET N-CH 30V 15A 8SOIC

onsemi

8,300 -
FDS8817NZ-G

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta) 4.5V, 10V 7mOhm @ 15A, 10V Surface Mount 3V @ 250µA 45 nC @ 10 V 30 V ±20V 2400 pF @ 15 V - - 8-SOIC - 1W (Ta) -55°C ~ 150°C (TJ)
R6024KNZ4C13

R6024KNZ4C13

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor

570 -
R6024KNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-247 - 245W (Tc) 150°C (TJ)
SIHB125N60EF-GE3

SIHB125N60EF-GE3

MOSFET N-CH 600V 25A D2PAK

Vishay Siliconix

2,720 -
SIHB125N60EF-GE3

数据表

EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 125mOhm @ 12A, 10V Surface Mount 5V @ 250µA 47 nC @ 10 V 600 V ±30V 1533 pF @ 100 V - - TO-263 (D2PAK) - 179W (Tc) -55°C ~ 150°C (TJ)
CSD17559Q5T

CSD17559Q5T

MOSFET N-CH 30V 100A 8VSON

Texas Instruments

482 -
CSD17559Q5T

数据表

NexFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Ta) 4.5V, 10V 1.15mOhm @ 40A, 10V Surface Mount 1.7V @ 250µA 51 nC @ 4.5 V 30 V ±20V 9200 pF @ 15 V - - 8-VSON-CLIP (5x6) - 3.2W (Ta), 96W (Tc) -55°C ~ 150°C (TJ)
R6011KNXC7G

R6011KNXC7G

600V 11A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

680 -
R6011KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 390mOhm @ 3.8A, 10V Through Hole 5V @ 1mA 22 nC @ 10 V 600 V ±20V 740 pF @ 25 V - - TO-220FM - 53W (Tc) 150°C (TJ)
IXTA08N120P

IXTA08N120P

MOSFET N-CH 1200V 800MA TO263

Littelfuse Inc.

450 -
IXTA08N120P

数据表

Polar TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800mA (Tc) 10V 25Ohm @ 500mA, 10V Surface Mount 4.5V @ 50µA 14 nC @ 10 V 1200 V ±20V 333 pF @ 25 V - - TO-263AA - 50W (Tc) -55°C ~ 150°C (TJ)
IXFP12N65X2

IXFP12N65X2

MOSFET N-CH 650V 12A TO220AB

Littelfuse Inc.

165 -
IXFP12N65X2

数据表

HiPerFET™, Ultra X2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 310mOhm @ 6A, 10V Through Hole 5V @ 250µA 18.5 nC @ 10 V 650 V ±30V 1134 pF @ 25 V - - TO-220-3 - 180W (Tc) -55°C ~ 150°C (TJ)
STP24NM60N

STP24NM60N

MOSFET N-CH 600V 17A TO220

STMicroelectronics

481 -
STP24NM60N

数据表

MDmesh™ II TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 190mOhm @ 8A, 10V Through Hole 4V @ 250µA 46 nC @ 10 V 600 V ±30V 1400 pF @ 50 V - - TO-220 - 125W (Tc) -55°C ~ 150°C (TJ)
NTMFS10N7D2C

NTMFS10N7D2C

MOSFET N-CH 100V 78A 8PQFN

onsemi

2,543 -
NTMFS10N7D2C

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 78A (Tc) 6V, 10V 7.2mOhm @ 28A, 10V Surface Mount 4V @ 150µA 37 nC @ 10 V 100 V ±20V 2635 pF @ 50 V - - 8-PQFN (5x6), Power56 - 83W (Tc) -55°C ~ 150°C (TJ)
R6024ENX

R6024ENX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor

464 -
R6024ENX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 4V @ 1mA 70 nC @ 10 V 600 V ±20V 1650 pF @ 25 V - - TO-220FM - 40W (Tc) 150°C (TJ)
IPT60R150G7XTMA1

IPT60R150G7XTMA1

MOSFET N-CH 600V 17A 8HSOF

Infineon Technologies

1,304 -
IPT60R150G7XTMA1

数据表

CoolMOS™ G7 8-PowerSFN Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 150mOhm @ 5.3A, 10V Surface Mount 4V @ 260µA 23 nC @ 10 V 600 V ±20V 902 pF @ 400 V - - PG-HSOF-8-2 - 106W (Tc) -55°C ~ 150°C (TJ)
NTP360N80S3Z

NTP360N80S3Z

MOSFET N-CH 800V 13A TO220-3

onsemi

8,823 -
NTP360N80S3Z

数据表

SuperFET® III TO-220-3 Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 360mOhm @ 6.5A, 10V Through Hole 3.8V @ 300µA 25.3 nC @ 10 V 800 V ±20V 1143 pF @ 400 V - - TO-220-3 - 96W (Tc) -55°C ~ 150°C (TJ)
SIDR220EP-T1-RE3

SIDR220EP-T1-RE3

N-CHANNEL 25 V (D-S) 175C MOSFET

Vishay Siliconix

5,988 -
SIDR220EP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 92.8A (Ta), 415A (Tc) 4.5V, 10V 0.58mOhm @ 20A, 10V Surface Mount 2.1V @ 250µA 200 nC @ 10 V 25 V +16V, -12V 10850 pF @ 10 V - - PowerPAK® SO-8DC - 6.25W (Ta), 415W (Tc) -55°C ~ 175°C (TJ)
STP9NK70ZFP

STP9NK70ZFP

MOSFET N-CH 700V 7.5A TO220FP

STMicroelectronics

1,899 -
STP9NK70ZFP

数据表

SuperMESH™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 1.2Ohm @ 4A, 10V Through Hole 4.5V @ 100µA 68 nC @ 10 V 700 V ±30V 1370 pF @ 25 V - - TO-220FP - 35W (Tc) -55°C ~ 150°C (TJ)
STB20N65M5

STB20N65M5

MOSFET N-CH 650V 18A D2PAK

STMicroelectronics

840 -
STB20N65M5

数据表

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 190mOhm @ 9A, 10V Surface Mount 5V @ 250µA 36 nC @ 10 V 650 V ±25V 1434 pF @ 100 V - - TO-263 (D2PAK) - 130W (Tc) 150°C (TJ)
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