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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AOTF20S60L

AOTF20S60L

MOSFET N-CH 600V 20A TO220-3F

Alpha & Omega Semiconductor Inc.

971 -
AOTF20S60L

数据表

aMOS™ TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 199mOhm @ 10A, 10V Through Hole 4.1V @ 250µA 19.8 nC @ 10 V 600 V ±30V 1038 pF @ 100 V - - TO-220F - 37.8W (Tc) -55°C ~ 150°C (TJ)
IPB180N04S401ATMA1

IPB180N04S401ATMA1

MOSFET N-CH 40V 180A TO263-7

Infineon Technologies

958 -
IPB180N04S401ATMA1

数据表

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 1.3mOhm @ 100A, 10V Surface Mount 4V @ 140µA 176 nC @ 10 V 40 V ±20V 14000 pF @ 25 V - - PG-TO263-7-3 - 188W (Tc) -55°C ~ 175°C (TJ)
IRFBE30LPBF

IRFBE30LPBF

MOSFET N-CH 800V 4.1A I2PAK

Vishay Siliconix

988 -
IRFBE30LPBF

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 78 nC @ 10 V 800 V ±20V 1300 pF @ 25 V - - I2PAK - 125W (Tc) -55°C ~ 150°C (TJ)
IXTA60N10T-TRL

IXTA60N10T-TRL

MOSFET N-CH 100V 60A TO263

Littelfuse Inc.

758 -
IXTA60N10T-TRL

数据表

Trench TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 18mOhm @ 25A, 10V Surface Mount 4.5V @ 50µA 49 nC @ 10 V 100 V ±20V 2650 pF @ 25 V - - TO-263 (D2PAK) - 176W (Tc) -55°C ~ 175°C (TJ)
IRF840STRRPBF

IRF840STRRPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

691 -
IRF840STRRPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 4.8A, 10V Surface Mount 4V @ 250µA 63 nC @ 10 V 500 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 125W (Tc) -55°C ~ 150°C (TJ)
R6024KNX

R6024KNX

MOSFET N-CH 600V 24A TO220FM

Rohm Semiconductor

291 -
R6024KNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 165mOhm @ 11.3A, 10V Through Hole 5V @ 1mA 45 nC @ 10 V 600 V ±20V 2000 pF @ 25 V - - TO-220FM - 74W (Tc) -55°C ~ 150°C (TJ)
PH6030DLV-CBSNX

PH6030DLV-CBSNX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.

3,562 -
PH6030DLV-CBSNX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
SIHJ240N60E-T1-GE3

SIHJ240N60E-T1-GE3

MOSFET N-CH 600V 12A PPAK SO-8

Vishay Siliconix

1,100 -
SIHJ240N60E-T1-GE3

数据表

E PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 240mOhm @ 5.5A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 600 V ±30V 783 pF @ 100 V - - PowerPAK® SO-8 - 89W (Tc) -55°C ~ 150°C (TJ)
PH4030DLVX

PH4030DLVX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.

6,419 -
PH4030DLVX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PSMP160-100YSX

PSMP160-100YSX

MOSFET P-CH 100V LFPAK

Nexperia USA Inc.

3,408 -
PSMP160-100YSX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PH6030DLVX

PH6030DLVX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.

3,783 -
PH6030DLVX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PH3830DLX

PH3830DLX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.

6,691 -
PH3830DLX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PH1430DLSX

PH1430DLSX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.

4,108 -
PH1430DLSX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PH4030DLAX

PH4030DLAX

MOSFET N-CH 30V LFPAK

Nexperia USA Inc.

6,467 -
PH4030DLAX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
FDY100PZ-G

FDY100PZ-G

MOSFET P-CH SC89

onsemi

2,013 -
FDY100PZ-G

数据表

PowerTrench® SC-89, SOT-490 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V Surface Mount 1.5V @ 250µA 1.4 nC @ 4.5 V 20 V ±8V 100 pF @ 10 V - - SOT-523F - 446mW (Ta) -55°C ~ 150°C (TJ)
NDS0605-F169

NDS0605-F169

MOSFET P-CH 60V SOT-23

onsemi

4,666 -
NDS0605-F169

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 180mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V Surface Mount 3V @ 250µA 2.5 nC @ 10 V 60 V ±20V 79 pF @ 25 V - - SOT-23-3 - 360mW (Ta) -55°C ~ 150°C (TJ)
DMNH6012LK3-13

DMNH6012LK3-13

MOSFET N-CH 60V 60A TO252

Diodes Incorporated

4,662 -
DMNH6012LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 12mOhm @ 25A, 10V Surface Mount 3V @ 250µA 35.2 nC @ 10 V 60 V ±20V 1926 pF @ 30 V AEC-Q101 - TO-252-3 Automotive 2W (Ta) -55°C ~ 175°C (TJ)
FDC5612-G

FDC5612-G

MOSFET N-CH 60V SUPERSOT6

onsemi

7,288 -
FDC5612-G

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Ta) 6V, 10V 55mOhm @ 4.3A, 10V Surface Mount 4V @ 250µA 18 nC @ 10 V 60 V ±20V 650 pF @ 25 V - - SuperSOT™-6 - 800mW (Ta) -55°C ~ 150°C (TJ)
FDS4465-PG

FDS4465-PG

MOSFET P-CH 20V 8SOIC

onsemi

4,443 -
FDS4465-PG

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 13.5A (Ta) 1.8V, 4.5V 8.5mOhm @ 13.5A, 4.5V Surface Mount 1.5V @ 250µA 120 nC @ 4.5 V 20 V ±8V 8237 pF @ 10 V - - 8-SOIC - 1.2W (Ta) -55°C ~ 175°C (TJ)
HUFA76413P3

HUFA76413P3

MOSFET N-CH 60V 23A TO220-3

onsemi

4,057 -
HUFA76413P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 23A (Tc) 4.5V, 10V 49mOhm @ 23A, 10V Through Hole 3V @ 250µA 20 nC @ 10 V 60 V ±16V 645 pF @ 25 V - - TO-220-3 - 60W (Tc) -55°C ~ 175°C (TJ)
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