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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
LSIC1MO120G0120

LSIC1MO120G0120

MOSFET SIC 1200V 18A TO247-4L

Littelfuse Inc.

9,987 -
LSIC1MO120G0120

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 27A (Tc) 20V 150mOhm @ 14A, 20V Through Hole 4V @ 7mA 63 nC @ 20 V 1200 V +22V, -6V 1130 pF @ 800 V - - TO-247-4L - 156W (Tc) -55°C ~ 175°C (TJ)
IPF09N03LA G

IPF09N03LA G

MOSFET N-CH 25V 50A TO252-3

Infineon Technologies

2,607 -
IPF09N03LA G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 8.6mOhm @ 30A, 10V Surface Mount 2V @ 20µA 13 nC @ 5 V 25 V ±20V 1642 pF @ 15 V - - PG-TO252-3-23 - 63W (Tc) -55°C ~ 175°C (TJ)
PSMN2R0-30YLD/2X

PSMN2R0-30YLD/2X

PSMN2R0-30YLD/SOT669/LFPAK

Nexperia USA Inc.

8,660 -
PSMN2R0-30YLD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 46 nC @ 10 V 30 V ±20V 2969 pF @ 15 V - - LFPAK56, Power-SO8 - 142W (Tc) -55°C ~ 175°C (TJ)
LSIC1MO120G0080

LSIC1MO120G0080

MOSFET SIC 1200V 25A TO247-4L

Littelfuse Inc.

7,766 -
LSIC1MO120G0080

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 39A (Tc) 20V 100mOhm @ 20A, 20V Through Hole 4V @ 10mA 92 nC @ 20 V 1200 V +22V, -6V 170 pF @ 800 V - - TO-247-4L - 214W (Tc) -55°C ~ 175°C (TJ)
TSM1N80CW RPG

TSM1N80CW RPG

MOSFET N-CH 800V 300MA SOT223

Taiwan Semiconductor Corporation

9,479 -
TSM1N80CW RPG

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Ta) 10V 21.6Ohm @ 150mA, 10V Surface Mount 5V @ 250µA 6 nC @ 10 V 800 V ±30V 200 pF @ 25 V - - SOT-223 - 2.1W (Tc) -55°C ~ 150°C (TJ)
LSIC1MO120G0160

LSIC1MO120G0160

MOSFET SIC 1200V 14A TO247-4L

Littelfuse Inc.

6,871 -
LSIC1MO120G0160

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 22A (Tc) 20V 200mOhm @ 10A, 20V Through Hole 4V @ 5mA 50 nC @ 20 V 1200 V +22V, -6V 890 pF @ 800 V - - TO-247-4L - 125W (Tc) -55°C ~ 175°C (TJ)
BSF083N03LQ G

BSF083N03LQ G

MOSFET N-CH 30V 13A/53A 2WDSON

Infineon Technologies

3,414 -
BSF083N03LQ G

数据表

OptiMOS™ 3-WDSON Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 53A (Tc) 4.5V, 10V 8.3mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 18 nC @ 10 V 30 V ±20V 1800 pF @ 15 V - - MG-WDSON-2, CanPAK M™ - 2.2W (Ta), 36W (Tc) -40°C ~ 150°C (TJ)
AUXNSF2804STRL7P

AUXNSF2804STRL7P

MOSFET N-CH

Infineon Technologies

9,055 -
AUXNSF2804STRL7P

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
DMS3014SSS-13

DMS3014SSS-13

MOSFET N-CH 30V 10.4A 8SO

Diodes Incorporated

25 -
DMS3014SSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.4A (Ta) 4.5V, 10V 13mOhm @ 10.4A, 10V Surface Mount 2.2V @ 250µA 45.7 nC @ 10 V 30 V ±12V 2296 pF @ 15 V - Schottky Diode (Body) 8-SO - 1.55W (Ta) -55°C ~ 150°C (TJ)
TK430A60F,S4X(S

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

6,663 -
TK430A60F,S4X(S

数据表

U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 13A (Ta) 10V 430mOhm @ 6.5A, 10V Through Hole 4V @ 1.75mA 48 nC @ 10 V 600 V ±30V 1940 pF @ 300 V - - TO-220SIS - 45W (Tc) 150°C
SI2304DS,215

SI2304DS,215

MOSFET N-CH 30V 1.7A TO236AB

Nexperia USA Inc.

2,634 -
SI2304DS,215

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 4.5V, 10V 117mOhm @ 500mA, 10V Surface Mount 2V @ 1mA 4.6 nC @ 10 V 30 V ±20V 195 pF @ 10 V - - TO-236AB - 830mW (Tc) -65°C ~ 150°C (TJ)
TK370A60F,S4X(S

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

4,152 -
TK370A60F,S4X(S

数据表

U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 15A (Ta) 10V 370mOhm @ 7.5A, 10V Through Hole 4V @ 2.04mA 55 nC @ 10 V 600 V ±30V 2200 pF @ 300 V - - TO-220SIS - 45W (Tc) 150°C
SI1300BDL-T1-E3

SI1300BDL-T1-E3

MOSFET N-CH 20V 400MA SC70-3

Vishay Siliconix

8,930 -
SI1300BDL-T1-E3

数据表

TrenchFET® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 400mA (Tc) 2.5V, 4.5V 850mOhm @ 250mA, 4.5V Surface Mount 1V @ 250µA 0.84 nC @ 4.5 V 20 V ±8V 35 pF @ 10 V - - SC-70-3 - 190mW (Ta), 200mW (Tc) -55°C ~ 150°C (TJ)
FQD9N25TM-SBEK002

FQD9N25TM-SBEK002

MOSFET N-CH 250V 7.4A TO252AA

onsemi

6,769 -
FQD9N25TM-SBEK002

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V Surface Mount 5V @ 250µA 20 nC @ 10 V 250 V ±30V 700 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
SI1304BDL-T1-E3

SI1304BDL-T1-E3

MOSFET N-CH 30V 900MA SC70-3

Vishay Siliconix

2,748 -
SI1304BDL-T1-E3

数据表

TrenchFET® SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 900mA (Tc) 2.5V, 4.5V 270mOhm @ 900mA, 4.5V Surface Mount 1.3V @ 250µA 2.7 nC @ 4.5 V 30 V ±12V 100 pF @ 15 V - - SC-70-3 - 340mW (Ta), 370mW (Tc) -55°C ~ 150°C (TJ)
FDP13AN06A0-SW82126

FDP13AN06A0-SW82126

MOSFET N-CH 60V TO220-3

onsemi

3,392 -
FDP13AN06A0-SW82126

数据表

- TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V Through Hole 4V @ 250µA 29 nC @ 10 V 60 V ±20V 1350 pF @ 25 V - - TO-220-3 - 115W (Tc) -55°C ~ 175°C (TJ)
AOD484

AOD484

MOSFET N-CH 30V 25A TO252

Alpha & Omega Semiconductor Inc.

8,952 -
AOD484

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 21 nC @ 10 V 30 V ±20V 1220 pF @ 15 V - - TO-252 (DPAK) - 2.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
IGT40R070D1ATMA1

IGT40R070D1ATMA1

GAN HV

Infineon Technologies

2,653 -
IGT40R070D1ATMA1

数据表

CoolGaN™ 8-PowerSFN Bulk Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 31A (Tc) - - Surface Mount 1.6V @ 2.6mA - 400 V -10V 382 pF @ 320 V - - PG-HSOF-8-3 - 125W (Tc) -55°C ~ 150°C (TJ)
FDY301NZ

FDY301NZ

MOSFET N-CH 20V 200MA SC89-3

onsemi

2,516 -
FDY301NZ

数据表

PowerTrench® SC-89, SOT-490 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V Surface Mount 1.5V @ 250µA 1.1 nC @ 4.5 V 20 V ±12V 60 pF @ 10 V - - SC-89-3 - 625mW (Ta) -55°C ~ 150°C (TJ)
IGOT60R070D1E8220AUMA1

IGOT60R070D1E8220AUMA1

GAN HV

Infineon Technologies

9,087 -
IGOT60R070D1E8220AUMA1

数据表

CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 31A (Tc) - - Surface Mount 1.6V @ 2.6mA - 600 V -10V 380 pF @ 400 V - - PG-DSO-20-87 - 125W (Tc) -55°C ~ 150°C (TJ)
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