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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RF9G120BKFRATCR

RF9G120BKFRATCR

NCH 40V 12A, DFN2020Y7LSAA, POWE

Rohm Semiconductor

3,490 -
RF9G120BKFRATCR

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 17.5mOhm @ 3A, 10V Surface Mount 2.5V @ 431µA 8.5 nC @ 10 V 40 V ±20V 470 pF @ 20 V AEC-Q101 - DFN2020Y7LSAA Automotive 23W (Tc) 150°C (TJ)
RQ3L120BJFRATCB

RQ3L120BJFRATCB

PCH -60V -12A, HSMT8AG, POWER MO

Rohm Semiconductor

3,000 -
RQ3L120BJFRATCB

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 106mOhm @ 12A, 10V Surface Mount 2.5V @ 273µA 15.7 nC @ 10 V 60 V +5V, -20V 710 pF @ 30 V AEC-Q101 - 8-HSMT (3.2x3) Automotive 40W (Tc) 150°C (TJ)
NVMYS4D5N04CTWG

NVMYS4D5N04CTWG

T6 40V SL LFPAK

onsemi

2,960 -
NVMYS4D5N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 4.5mOhm @ 35A, 10V Surface Mount 3.5V @ 50µA 18 nC @ 10 V 40 V 20V 1150 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
MCAC5D3N06YHE3-TP

MCAC5D3N06YHE3-TP

MOSFET N-CH 60 75A DFN5060

Micro Commercial Co

9,500 -
MCAC5D3N06YHE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 5.3mOhm @ 20A, 10V Surface Mount 4V @ 250µA 26 nC @ 10 V 60 V ±20V 1530 pF @ 30 V AEC-Q101 - DFN5060 Automotive 75W (Tj) -55°C ~ 175°C (TJ)
SIR618DP-T1-GE3

SIR618DP-T1-GE3

MOSFET N-CH 200V 14.2A PPAK SO-8

Vishay Siliconix

4,603 -
SIR618DP-T1-GE3

数据表

ThunderFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.2A (Tc) 7.5V, 10V 95mOhm @ 8A, 10V Surface Mount 4V @ 250µA 16 nC @ 7.5 V 200 V ±20V 740 pF @ 100 V - - PowerPAK® SO-8 - 48W (Tc) -55°C ~ 150°C (TJ)
R6006KND4TL1

R6006KND4TL1

600V 2.8A SOT-223-3, HIGH-SPEED

Rohm Semiconductor

3,981 -
R6006KND4TL1

数据表

- TO-261-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 870mOhm @ 2A, 10V Surface Mount 5.5V @ 1mA 12 nC @ 10 V 600 V ±20V 350 pF @ 25 V - - SOT-223-3 - 12.3W (Tc) 150°C (TJ)
TPH2R805PL,LQ

TPH2R805PL,LQ

PB-F POWER MOSFET TRANSISTOR SOP

Toshiba Semiconductor and Storage

2,980 -
TPH2R805PL,LQ

数据表

U-MOSIX-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.8mOhm @ 50A, 10V Surface Mount 2.4V @ 500µA 73 nC @ 10 V 45 V ±20V 5175 pF @ 22.5 V - - 8-SOP Advance (5x5) - 830mW (Ta), 116W (Tc) 175°C
PSMN3R3-40MLHX

PSMN3R3-40MLHX

MOSFET N-CH 40V 118A LFPAK33

Nexperia USA Inc.

2,945 -
PSMN3R3-40MLHX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 118A (Tc) 4.5V, 10V 3.3mOhm @ 25A, 10V Surface Mount 2.15V @ 1mA 54 nC @ 10 V 40 V ±20V 3794 pF @ 20 V - - LFPAK33 - 101W (Tc) -55°C ~ 175°C (TJ)
XP1504MT

XP1504MT

FET N-CH 150V 6.3A 15.8A PMPAK

YAGEO XSEMI

1,000 -
XP1504MT

数据表

XP1504 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta), 15.8A (Tc) 10V 59mOhm @ 9A, 10V Surface Mount 4V @ 250µA 25.6 nC @ 10 V 150 V ±20V 984 pF @ 100 V - - PMPAK® 5 x 6 - 5W (Ta), 31.2W (Tc) -55°C ~ 150°C (TJ)
IPP083N10N5XKSA1

IPP083N10N5XKSA1

TRENCH >=100V

Infineon Technologies

447 -
IPP083N10N5XKSA1

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 73A (Tc) 6V, 10V 8.3mOhm @ 73A, 10V Through Hole 3.8V @ 49µA 37 nC @ 10 V 100 V ±20V 2730 pF @ 50 V - - PG-TO220-3-1 - 100W (Tc) -55°C ~ 175°C (TJ)
BSP170PL6327HTSA1

BSP170PL6327HTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies

6,322 -
BSP170PL6327HTSA1

数据表

SIPMOS® TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.9A (Ta) 10V 300mOhm @ 1.9A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 60 V ±20V 410 pF @ 25 V - - PG-SOT223-4-21 - 1.8W (Ta) -55°C ~ 150°C (TJ)
AO4701

AO4701

MOSFET P-CH 30V 5A 8SOIC

Alpha & Omega Semiconductor Inc.

7,318 -
AO4701

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5A (Ta) 2.5V, 10V 49mOhm @ 5A, 10V Surface Mount 1.3V @ 250µA 9.5 nC @ 4.5 V 30 V ±12V 952 pF @ 15 V - Schottky Diode (Isolated) 8-SOIC - 2W (Ta) -55°C ~ 150°C (TJ)
AO4708

AO4708

MOSFET N-CH 30V 15A 8SOIC

Alpha & Omega Semiconductor Inc.

7,623 -
AO4708

数据表

SRFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta) 4.5V, 10V 8.7mOhm @ 15A, 10V Surface Mount 2.4V @ 250µA 52 nC @ 10 V 30 V ±12V 3360 pF @ 15 V - Schottky Diode (Body) 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
SI5406CDC-T1-GE3

SI5406CDC-T1-GE3

MOSFET N-CH 12V 6A 1206-8

Vishay Siliconix

6,161 -
SI5406CDC-T1-GE3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 1.8V, 4.5V 20mOhm @ 6.5A, 4.5V Surface Mount 1V @ 250µA 32 nC @ 8 V 12 V ±8V 1100 pF @ 6 V - - 1206-8 ChipFET™ - 2.3W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ)
SI7720DN-T1-GE3

SI7720DN-T1-GE3

MOSFET N-CH 30V 12A PPAK1212-8

Vishay Siliconix

5,938 -
SI7720DN-T1-GE3

数据表

SkyFET®, TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 12.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 45 nC @ 10 V 30 V ±20V 1790 pF @ 15 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ)
SIA417DJ-T1-GE3

SIA417DJ-T1-GE3

MOSFET P-CH 8V 12A PPAK SC70-6

Vishay Siliconix

9,209 -
SIA417DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 1.2V, 4.5V 23mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 32 nC @ 5 V 8 V ±5V 1600 pF @ 4 V - - PowerPAK® SC-70-6 - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ)
STS11N3LLH5

STS11N3LLH5

MOSFET N-CH 30V 11A 8SO

STMicroelectronics

2,229 -
STS11N3LLH5

数据表

STripFET™ V 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 4.5V, 10V 14mOhm @ 5.5A, 10V Surface Mount 1V @ 250µA 5 nC @ 4.5 V 30 V +22V, -20V 724 pF @ 25 V - - 8-SOIC - 2.7W (Tc) -55°C ~ 150°C (TJ)
SIR412DP-T1-GE3

SIR412DP-T1-GE3

MOSFET N-CH 25V 20A PPAK SO-8

Vishay Siliconix

5,521 -
SIR412DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 25 V ±20V 600 pF @ 10 V - - PowerPAK® SO-8 - 3.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ)
IRF9332TRPBF

IRF9332TRPBF

MOSFET P-CH 30V 9.8A 8SO

Infineon Technologies

2,918 -
IRF9332TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.8A (Ta) 4.5V, 10V 17.5mOhm @ 9.8A, 10V Surface Mount 2.4V @ 25µA 41 nC @ 10 V 30 V ±20V 1270 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
PSMN3R2-30YLC,115

PSMN3R2-30YLC,115

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

4,028 -
PSMN3R2-30YLC,115

数据表

- SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.5mOhm @ 25A, 10V Surface Mount 1.95V @ 1mA 29.5 nC @ 10 V 30 V ±20V 2081 pF @ 15 V - - LFPAK56, Power-SO8 - 92W (Tc) -55°C ~ 175°C (TJ)
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