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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQP5N90

FQP5N90

MOSFET N-CH 900V 5.4A TO220-3

onsemi

9,181 -
FQP5N90

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 2.3Ohm @ 2.7A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 900 V ±30V 1550 pF @ 25 V - - TO-220-3 - 158W (Tc) -55°C ~ 150°C (TJ)
IRFZ48VSTRLPBF

IRFZ48VSTRLPBF

MOSFET N-CH 60V 72A D2PAK

Infineon Technologies

6,232 -
IRFZ48VSTRLPBF

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 12mOhm @ 43A, 10V Surface Mount 4V @ 250µA 110 nC @ 10 V 60 V ±20V 1985 pF @ 25 V - - D2PAK - 150W (Tc) -55°C ~ 175°C (TJ)
BUZ31 E3045A

BUZ31 E3045A

MOSFET N-CH 200V 14.5A D2PAK

Infineon Technologies

9,617 -
BUZ31 E3045A

数据表

SIPMOS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14.5A (Tc) 10V 200mOhm @ 9A, 5V Surface Mount 4V @ 1mA - 200 V ±20V 1120 pF @ 25 V - - PG-TO263-3 - 95W (Tc) -55°C ~ 150°C (TJ)
ZXM62N03GTA

ZXM62N03GTA

MOSFET N-CH 30V 3.4A/4.7A SOT223

Diodes Incorporated

3,390 -
ZXM62N03GTA

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.4A (Ta), 4.7A (Tc) 4.5V, 10V 110mOhm @ 2.2A, 10V Surface Mount 1V @ 250µA 9.6 nC @ 10 V 30 V ±20V 380 pF @ 25 V - - SOT-223-3 - 2W (Ta) -55°C ~ 150°C (TJ)
PSMN015-100YSFX

PSMN015-100YSFX

NEXTPOWER 80/100V MOSFETS

Nexperia USA Inc.

1,413 -
PSMN015-100YSFX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 7V, 10V 15mOhm @ 15A, 10V Surface Mount 4V @ 1mA 36 nC @ 10 V 100 V ±20V 2234 pF @ 50 V - - LFPAK56, Power-SO8 - 105W (Tc) -55°C ~ 175°C (TJ)
TK3P50D,RQ(S

TK3P50D,RQ(S

MOSFET N-CH 500V 3A DPAK

Toshiba Semiconductor and Storage

1,399 -
TK3P50D,RQ(S

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3Ohm @ 1.5A, 10V Surface Mount 4.4V @ 1mA 7 nC @ 10 V 500 V ±30V 280 pF @ 25 V - - DPAK - 60W (Tc) 150°C (TJ)
FQPF4N90

FQPF4N90

MOSFET N-CH 900V 2.5A TO220F

onsemi

2,098 -
FQPF4N90

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 3.3Ohm @ 1.25A, 10V Through Hole 5V @ 250µA 30 nC @ 10 V 900 V ±30V 1100 pF @ 25 V - - TO-220F-3 - 47W (Tc) -55°C ~ 150°C (TJ)
PJQ4564AP-AU_R2_002A1

PJQ4564AP-AU_R2_002A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,000 -
PJQ4564AP-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ4576AP-AU_R2_002A1

PJQ4576AP-AU_R2_002A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

5,000 -
PJQ4576AP-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RF9L120BKFRATCR

RF9L120BKFRATCR

NCH 60V 12A, DFN2020Y7LSAA, POWE

Rohm Semiconductor

3,498 -
RF9L120BKFRATCR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SQS140ELNW-T1_GE3

SQS140ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix

3,348 -
SQS140ELNW-T1_GE3

数据表

TrenchFET® GenIV PowerPAK® 1212-8SLW Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 153A (Tc) 4.5V, 10V 2.53mOhm @ 10A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 80 nC @ 10 V 40 V ±20V 4051 pF @ 25 V AEC-Q101 - PowerPAK® 1212-8SLW Automotive 119W (Tc) -55°C ~ 175°C (TJ)
PJQ5524-AU_R2_002A1

PJQ5524-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

3,000 -
PJQ5524-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RQ3G120BJFRATCB

RQ3G120BJFRATCB

PCH -40V -12A, HSMT8AG, POWER MO

Rohm Semiconductor

2,990 -
RQ3G120BJFRATCB

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 48mOhm @ 12A, 10V Surface Mount 2.5V @ 279µA 15.5 nC @ 10 V 40 V +5V, -20V 750 pF @ 20 V AEC-Q101 - 8-HSMT (3.2x3) Automotive 40W (Tc) 150°C (TJ)
SQRS152ELP-T1_GE3

SQRS152ELP-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix

2,642 -
SQRS152ELP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 5mOhm @ 15A, 10V Surface Mount 2.2V @ 250µA 34 nC @ 10 V 40 V ±20V 1633 pF @ 25 V AEC-Q101 - PowerPAK® SO-8SW Automotive 35W (Tc) -55°C ~ 175°C (TJ)
IPP023N03LF2SAKSA1

IPP023N03LF2SAKSA1

MOSFET N-CH 30V 75A TO220AB

Infineon Technologies

1,000 -
IPP023N03LF2SAKSA1

数据表

StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 121A (Tc) 4.5V, 10V 2.35mOhm @ 70A, 10V Through Hole 2.35V @ 60µA 75 nC @ 10 V 30 V ±20V 3400 pF @ 15 V - - PG-TO220-3-U05 - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
SISS30DN-T1-GE3

SISS30DN-T1-GE3

MOSFET N-CH 80V 15.9A/54.7A PPAK

Vishay Siliconix

12,687 -
SISS30DN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.9A (Ta), 54.7A (Tc) 7.5V, 10V 8.25mOhm @ 10A, 10V Surface Mount 3.8V @ 250µA 40 nC @ 10 V 80 V ±20V 1666 pF @ 10 V - - PowerPAK® 1212-8S - 4.8W (Ta), 57W (Tc) -55°C ~ 150°C (TJ)
SIR4608DP-T1-GE3

SIR4608DP-T1-GE3

N-CHANNEL 60 V (D-S) MOSFET POWE

Vishay Siliconix

6,038 -
SIR4608DP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.1A (Ta), 42.8A (Tc) 7.5V, 10V 11.8mOhm @ 10A, 10V Surface Mount 4V @ 250µA 18 nC @ 10 V 60 V ±20V 740 pF @ 30 V - - PowerPAK® SO-8 - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
TK2P90E,RQ

TK2P90E,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

5,943 -
TK2P90E,RQ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 5.9Ohm @ 1A, 10V Surface Mount 4V @ 200µA 12 nC @ 10 V 900 V ±30V 500 pF @ 25 V - - DPAK - 80W (Tc) 150°C
PJQ4451EP-AU_R2_002A1

PJQ4451EP-AU_R2_002A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,955 -
PJQ4451EP-AU_R2_002A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Ta), 60A (Tc) 4.5V, 10V 9.8mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 59 nC @ 10 V 40 V ±25V 3300 pF @ 25 V AEC-Q101 - DFN3333-8 Automotive 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ)
FDD86380-F085

FDD86380-F085

MOSFET N-CH 80V 50A DPAK

onsemi

4,757 -
FDD86380-F085

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 13.5mOhm @ 50A, 10V Surface Mount 4V @ 250µA 30 nC @ 10 V 80 V ±20V 1440 pF @ 40 V AEC-Q101 - TO-252AA Automotive 75W (Tj) -55°C ~ 175°C (TJ)
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