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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIS452DN-T1-GE3

SIS452DN-T1-GE3

MOSFET N-CH 12V 35A PPAK1212-8

Vishay Siliconix

8,206 -
SIS452DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 3.25mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 41 nC @ 10 V 12 V ±20V 1700 pF @ 6 V - - PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ)
IRLHS6242TR2PBF

IRLHS6242TR2PBF

MOSFET N-CH 20V 10A PQFN

Infineon Technologies

2,772 -
IRLHS6242TR2PBF

数据表

- 6-PowerVDFN Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta), 12A (Tc) - 11.7mOhm @ 8.5A, 4.5V Surface Mount 1.1V @ 10µA 14 nC @ 4.5 V 20 V - 1110 pF @ 10 V - - 6-PQFN (2x2) - - -
IRLHS6342TR2PBF

IRLHS6342TR2PBF

MOSFET N-CH 30V 8.7A PQFN

Infineon Technologies

3,246 -
IRLHS6342TR2PBF

数据表

- 6-PowerVDFN Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Ta), 19A (Tc) - 15.5mOhm @ 8.5A, 4.5V Surface Mount 1.1V @ 10µA 11 nC @ 4.5 V 30 V - 1019 pF @ 25 V - - 6-PQFN (2x2) - - -
IPP048N04NGXKSA1

IPP048N04NGXKSA1

MOSFET N-CH 40V 70A TO220-3

Infineon Technologies

5,913 -
IPP048N04NGXKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 4.8mOhm @ 70A, 10V Through Hole 4V @ 200µA 41 nC @ 10 V 40 V ±20V 3300 pF @ 25 V - - PG-TO220-3 - 79W (Tc) -55°C ~ 175°C (TJ)
CDM2206-800LR SL PBFREE

CDM2206-800LR SL PBFREE

MOSFET N-CH 800V 6A TO220

Central Semiconductor Corp

9,829 -
CDM2206-800LR SL PBFREE

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 950mOhm @ 3A, 10V Through Hole 4V @ 250µA 24.3 nC @ 10 V 800 V 30V - - - TO-220-3 - 110W (Tc) -55°C ~ 150°C (TJ)
SPD100N03S2L04T

SPD100N03S2L04T

MOSFET N-CH 30V 100A TO252-5

Infineon Technologies

5,406 -
SPD100N03S2L04T

数据表

OptiMOS™ TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 4.2mOhm @ 50A, 10V Surface Mount 2V @ 100µA 89.7 nC @ 10 V 30 V ±20V 3320 pF @ 25 V - - PG-TO252-5-1 - 150W (Tc) -55°C ~ 175°C (TJ)
SIHU4N80E-GE3

SIHU4N80E-GE3

MOSFET N-CH 800V 4.3A IPAK

Vishay Siliconix

3,544 -
SIHU4N80E-GE3

数据表

E TO-251-3 Long Leads, IPAK, TO-251AB Tube Active N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 800 V ±30V 622 pF @ 100 V - - IPAK (TO-251) - 69W (Tc) -55°C ~ 150°C (TJ)
FDPF5N50NZ

FDPF5N50NZ

MOSFET N-CH 500V 4.5A TO220F

onsemi

7,504 -
FDPF5N50NZ

数据表

UniFET-II™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.5Ohm @ 2.25A, 10V Through Hole 5V @ 250µA 12 nC @ 10 V 500 V ±25V 440 pF @ 25 V - - TO-220F-3 - 30W (Tc) -55°C ~ 150°C (TJ)
FQP19N20

FQP19N20

MOSFET N-CH 200V 19.4A TO220-3

onsemi

8,886 -
FQP19N20

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V Through Hole 5V @ 250µA 40 nC @ 10 V 200 V ±30V 1600 pF @ 25 V - - TO-220-3 - 140W (Tc) -55°C ~ 150°C (TJ)
IPD90P04P405AUMA1

IPD90P04P405AUMA1

MOSFET P-CH 40V 90A TO252-3

Infineon Technologies

3,920 -
IPD90P04P405AUMA1

数据表

* - Tape & Reel (TR) Obsolete - - - 10V - - - - - ±20V - - - - - - -
PJF6NA90_T0_00001

PJF6NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.

6,944 -
PJF6NA90_T0_00001

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 2.3Ohm @ 3A, 10V Through Hole 4V @ 250µA 23.6 nC @ 10 V 900 V ±30V 915 pF @ 25 V - - ITO-220AB - 56W (Tc) -55°C ~ 150°C (TJ)
BUK9E4R9-60E,127

BUK9E4R9-60E,127

MOSFET N-CH 60V 100A I2PAK

NXP USA Inc.

4,959 -
BUK9E4R9-60E,127

数据表

TrenchMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 5V, 10V 4.5mOhm @ 25A, 10V Through Hole 2.1V @ 1mA 65 nC @ 5 V 60 V ±10V 9710 pF @ 25 V - - I2PAK - 234W (Tc) -55°C ~ 175°C (TJ)
TSM4ND60CI C0G

TSM4ND60CI C0G

MOSFET N-CH 600V 4A ITO220

Taiwan Semiconductor Corporation

9,965 -
TSM4ND60CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.2Ohm @ 1.4A, 10V Through Hole 3.8V @ 250µA 17.2 nC @ 10 V 600 V ±30V 582 pF @ 50 V - - ITO-220 - 41.6W (Tc) -55°C ~ 150°C (TJ)
IPD06P002NATMA1

IPD06P002NATMA1

MOSFET P-CH 60V 35A TO252-3

Infineon Technologies

8,947 -
IPD06P002NATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 38mOhm @ 35A, 10V Surface Mount 4V @ 1.7mA 63 nC @ 10 V 60 V ±20V 2500 pF @ 30 V - - PG-TO252-3 - 125W (Tc) -55°C ~ 175°C (TJ)
STF6NM60N

STF6NM60N

MOSFET N-CH 600V 4.6A TO220FP

STMicroelectronics

4,842 -
STF6NM60N

数据表

MDmesh™ II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.6A (Tc) 10V 920mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 600 V ±25V 420 pF @ 50 V - - TO-220FP - 20W (Tc) -55°C ~ 150°C (TJ)
FQP6N80

FQP6N80

MOSFET N-CH 800V 5.8A TO220-3

onsemi

3,367 -
FQP6N80

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.8A (Tc) 10V 1.95Ohm @ 2.9A, 10V Through Hole 5V @ 250µA 31 nC @ 10 V 800 V ±30V 1500 pF @ 25 V - - TO-220-3 - 158W (Tc) -55°C ~ 150°C (TJ)
IRFBC30PBF-BE3

IRFBC30PBF-BE3

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix

8,310 -
IRFBC30PBF-BE3

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 600 V ±20V 660 pF @ 25 V - - TO-220AB - 74W (Tc) -55°C ~ 150°C (TJ)
IRFR9310TRR

IRFR9310TRR

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix

5,448 -
IRFR9310TRR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 400 V ±20V 270 pF @ 25 V - - DPAK - 50W (Tc) -55°C ~ 150°C (TJ)
IRLR4343TRR

IRLR4343TRR

MOSFET N-CH 55V 26A DPAK

Infineon Technologies

8,314 -
IRLR4343TRR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V Surface Mount 1V @ 250µA 42 nC @ 10 V 55 V ±20V 740 pF @ 50 V - - TO-252AA (DPAK) - 79W (Tc) -40°C ~ 175°C (TJ)
IRF610LPBF

IRF610LPBF

MOSFET N-CH 200V 3.3A I2PAK

Vishay Siliconix

7,224 -
IRF610LPBF

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 200 V ±20V 140 pF @ 25 V - - I2PAK - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ)
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