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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RF9L120BJFRATCR

RF9L120BJFRATCR

PCH -60V -12A, DFN2020Y7LSAA, PO

Rohm Semiconductor

3,000 -
RF9L120BJFRATCR

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 106mOhm @ 3A, 10V Surface Mount 2.5V @ 273µA 15.7 nC @ 10 V 60 V +5V, -20V 710 pF @ 30 V AEC-Q101 - DFN2020Y7LSAA Automotive 23W (Tc) 150°C (TJ)
PJQ5453E-AU_R2_002A1

PJQ5453E-AU_R2_002A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,963 -
PJQ5453E-AU_R2_002A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12.8A (Ta), 61A (Tc) 4.5V, 10V 11.3mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 56 nC @ 10 V 40 V ±25V 2858 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 3.3W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
XP65AN1K2IT

XP65AN1K2IT

MOSFET N-CH 650V 7A TO220CFM

YAGEO XSEMI

989 -
XP65AN1K2IT

数据表

XP65AN1K2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.2Ohm @ 3.5A, 10V Through Hole 4V @ 250µA 44.8 nC @ 10 V 650 V ±30V 2048 pF @ 100 V - - TO-220CFM - 1.92W (Ta), 34.7W (Tc) -55°C ~ 150°C (TJ)
IRFBC20PBF-BE3

IRFBC20PBF-BE3

MOSFET N-CH 600V 2.2A TO220AB

Vishay Siliconix

972 -
IRFBC20PBF-BE3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V Through Hole 4V @ 250µA 18 nC @ 10 V 600 V ±20V 350 pF @ 25 V - - TO-220AB - 50W (Tc) -55°C ~ 150°C (TJ)
PJQ5462A-AU_R2_000A1

PJQ5462A-AU_R2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,336 -
PJQ5462A-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.5A (Ta), 42A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 40 nC @ 10 V 60 V ±20V 2142 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 2.4W (Ta), 71.4W (Tc) -55°C ~ 175°C (TJ)
DMT32M5LFG-13

DMT32M5LFG-13

MOSFET N-CH 30V 30A POWERDI3333

Diodes Incorporated

2,692 -
DMT32M5LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 4.5V, 10V 1.7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 67.7 nC @ 10 V 30 V ±20V 4066 pF @ 15 V AEC-Q101 - PowerDI3333-8 Automotive 2.3W (Ta) -55°C ~ 150°C (TJ)
DMP3015LSSQ-13

DMP3015LSSQ-13

MOSFET P-CH 30V 13A 8SO

Diodes Incorporated

2,483 -
DMP3015LSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 11mOhm @ 13A, 10V Surface Mount 2V @ 250µA 60.4 nC @ 10 V 30 V ±20V 2748 pF @ 20 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SIHF840LCS-GE3

SIHF840LCS-GE3

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix

5,604 -
SIHF840LCS-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 850mOhm @ 4.8A, 10V Surface Mount 4V @ 250µA 39 nC @ 10 V 500 V ±30V 1100 pF @ 25 V - - TO-263 (D2PAK) - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
BSG0812NDATMA1

BSG0812NDATMA1

MOSFET N-CH 8TISON

Infineon Technologies

5,306 -
BSG0812NDATMA1

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IRFR1N60ATRR

IRFR1N60ATRR

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix

7,717 -
IRFR1N60ATRR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 7Ohm @ 840mA, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 600 V ±30V 229 pF @ 25 V - - DPAK - 36W (Tc) -55°C ~ 150°C (TJ)
AOT254L

AOT254L

MOSFET N-CH 150V 4.2A/32A TO220

Alpha & Omega Semiconductor Inc.

4,669 -
AOT254L

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.2A (Ta), 32A (Tc) 4.5V, 10V 46mOhm @ 20A, 10V Through Hole 2.7V @ 250µA 40 nC @ 10 V 150 V ±20V 2150 pF @ 75 V - - TO-220 - 2.1W (Ta), 125W (Tc) -55°C ~ 175°C (TJ)
IPD023N03LF2SATMA1

IPD023N03LF2SATMA1

IPD023N03LF2SATMA1

Infineon Technologies

2,000 -
IPD023N03LF2SATMA1

数据表

StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 137A (Tc) 4.5V, 10V 2.35mOhm @ 70A, 10V Surface Mount 2.35V @ 60µA 36 nC @ 4.5 V 30 V ±20V 3400 pF @ 15 V - - PG-TO252-3-34 - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
MCAC60N15YA-TP

MCAC60N15YA-TP

MOSFET N-CH 150 60A DFN5060

Micro Commercial Co

6,196 -
MCAC60N15YA-TP

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 6V, 10V 19mOhm @ 20A, 10V Surface Mount 4V @ 250µA 25 nC @ 10 V 150 V ±25V 2100 pF @ 75 V - - DFN5060 - 125W -55°C ~ 150°C
DMT32M5LFG-7

DMT32M5LFG-7

MOSFET N-CH 30V 30A POWERDI3333

Diodes Incorporated

1,898 -
DMT32M5LFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 4.5V, 10V 1.7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 67.7 nC @ 10 V 30 V ±20V 4066 pF @ 15 V AEC-Q101 - PowerDI3333-8 Automotive 2.3W (Ta) -55°C ~ 150°C (TJ)
IXTU1R4N60P

IXTU1R4N60P

MOSFET N-CH 600V 1.4A TO251

IXYS

6,971 -
IXTU1R4N60P

数据表

PolarHV™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 9Ohm @ 700mA, 10V Through Hole 5.5V @ 25µA 5.2 nC @ 10 V 600 V ±30V 140 pF @ 25 V - - TO-251AA - 50W (Tc) -55°C ~ 150°C (TJ)
NVMFWS016N10MCLT1G

NVMFWS016N10MCLT1G

PTNG 100V LL SO8FL

onsemi

1,500 -
NVMFWS016N10MCLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.9A (Ta), 46A (Tc) 4.5V, 10V 14mOhm @ 11A, 10V Surface Mount, Wettable Flank 3V @ 64µA 19 nC @ 10 V 100 V ±20V 1250 pF @ 50 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.6W (Ta), 64W (Tc) -55°C ~ 175°C (TJ)
IXTU44N10T

IXTU44N10T

MOSFET N-CH 100V 44A TO251

IXYS

6,268 -
IXTU44N10T

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 44A (Tc) - - Through Hole 4.5V @ 25µA - 100 V - - - - TO-251AA - - -
NVTFS020N06CTAG

NVTFS020N06CTAG

MOSFET N-CH 60V 7A/27A 8WDFN

onsemi

1,490 -
NVTFS020N06CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta), 27A (Tc) 10V 20.3mOhm @ 4A, 10V Surface Mount 4V @ 20µA 5.8 nC @ 10 V 60 V ±20V 355 pF @ 30 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 2.5W (Ta), 31W (Tc) -55°C ~ 175°C (TJ)
DMT10H4M5LPS-13

DMT10H4M5LPS-13

MOSFET BVDSS: 61V-100V POWERDI50

Diodes Incorporated

8,429 -
DMT10H4M5LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 100A (Tc) 4.5V, 10V 4.3mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 80 nC @ 10 V 100 V ±20V 4843 pF @ 50 V - - PowerDI5060-8 - 2.3W (Ta) -55°C ~ 150°C (TJ)
XP60SL600DH

XP60SL600DH

MOSFET N-CH 600V 7A TO252

YAGEO XSEMI

997 -
XP60SL600DH

数据表

XP60SL600D TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 2A, 10V Surface Mount 5V @ 250µA 32 nC @ 10 V 600 V ±20V 1072 pF @ 100 V - - TO-252 - 2W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ)
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