富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RQ3L070BGTB1

RQ3L070BGTB1

NCH 60V 20A, HSMT8G, POWER MOSFE

Rohm Semiconductor

1,011 -
RQ3L070BGTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta), 20A (Tc) 4.5V, 10V 24.7mOhm @ 7A, 10V Surface Mount 2.5V @ 1mA 7.6 nC @ 10 V 60 V ±20V 460 pF @ 30 V - - 8-HSMT (3.2x3) - 2W (Ta), 15W (Tc) 150°C (TJ)
TPH6R008QM,LQ

TPH6R008QM,LQ

80V UMOS9-H SOP-ADVANCE(N) 6MOHM

Toshiba Semiconductor and Storage

9,955 -
TPH6R008QM,LQ

数据表

U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 59A (Tc) 6V, 10V 6mOhm @ 29.5A, 10V Surface Mount 3.5V @ 400µA 38 nC @ 10 V 80 V ±20V 2500 pF @ 40 V - - 8-SOP Advance (5x5.75) - 3W (Ta), 135W (Tc) 175°C
SPD07N60S5

SPD07N60S5

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

8,656 -
SPD07N60S5

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V Surface Mount 5.5V @ 350µA 35 nC @ 10 V 600 V ±20V 970 pF @ 25 V - - PG-TO252-3-11 - 83W (Tc) -55°C ~ 150°C (TJ)
PJQ4476AP-AU_R2_000A1

PJQ4476AP-AU_R2_000A1

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

4,868 -
PJQ4476AP-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.3A (Ta), 35A (Tc) 4.5V, 10V 25mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 31 nC @ 10 V 100 V ±20V 1519 pF @ 30 V AEC-Q101 - DFN3333-8 Automotive 2W (Ta), 62W (Tc) -55°C ~ 150°C (TJ)
STL150N3LLH5

STL150N3LLH5

MOSFET N-CH 30V 195A POWERFLAT

STMicroelectronics

6,580 -
STL150N3LLH5

数据表

STripFET™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 4.5V, 10V 1.75mOhm @ 17.5A, 10V Surface Mount 2.2V @ 250µA 40 nC @ 4.5 V 30 V ±22V 5800 pF @ 25 V - - PowerFlat™ (5x6) - 114W (Tc) -55°C ~ 150°C (TJ)
MCU029N10YLHE3-TP

MCU029N10YLHE3-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

4,837 -
MCU029N10YLHE3-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 27A (Tc) 4.5V, 10V 29mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 12.7 nC @ 10 V 100 V ±20V 537 pF @ 25 V AEC-Q101 - TO-252 (DPAK) Automotive 53W (Tj) -55°C ~ 175°C (TJ)
PJD50P04-AU_L2_000A1

PJD50P04-AU_L2_000A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,153 -
PJD50P04-AU_L2_000A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Ta), 50A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 4.5 V 40 V ±20V 2767 pF @ 25 V AEC-Q101 - TO-252AA Automotive 2.4W (Ta), 75W (Tc) -55°C ~ 175°C (TJ)
IRFR430ATRLPBF

IRFR430ATRLPBF

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix

4,933 -
IRFR430ATRLPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.7Ohm @ 3A, 10V Surface Mount 4.5V @ 250µA 24 nC @ 10 V 500 V ±30V 490 pF @ 25 V - - DPAK - 110W (Tc) -55°C ~ 150°C (TJ)
NVMYS4D6N04CLTWG

NVMYS4D6N04CLTWG

MOSFET N-CH 40V 21A/78A LFPAK4

onsemi

2,984 -
NVMYS4D6N04CLTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta), 78A (Tc) 4.5V, 10V 4.5mOhm @ 35A, 10V Surface Mount 2V @ 40µA 23 nC @ 10 V 40 V ±20V 1300 pF @ 25 V AEC-Q101 - LFPAK4 (5x6) Automotive 3.6W (Ta), 50W (Tc) -55°C ~ 175°C (TJ)
IRFR430ATRRPBF

IRFR430ATRRPBF

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix

2,923 -
IRFR430ATRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.7Ohm @ 3A, 10V Surface Mount 4.5V @ 250µA 24 nC @ 10 V 500 V ±30V 490 pF @ 25 V - - DPAK - 110W (Tc) -55°C ~ 150°C (TJ)
AONS66620

AONS66620

N

Alpha & Omega Semiconductor Inc.

2,950 -
AONS66620

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.5A (Ta), 24A (Tc) 8V, 10V 9mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 25 nC @ 10 V 60 V ±20V 1070 pF @ 30 V - - 8-DFN (5x6) - 5W (Ta), 36.5W (Tc) -55°C ~ 150°C (TJ)
DMT10H015LFG-13

DMT10H015LFG-13

MOSFET N-CH 100V PWRDI3333

Diodes Incorporated

2,946 -
DMT10H015LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta), 42A (Tc) 6V, 10V 13.5mOhm @ 20A, 10V Surface Mount 3.5V @ 250µA 33.3 nC @ 10 V 100 V ±20V 1871 pF @ 50 V - - POWERDI3333-8 - 2W (Ta), 35W (Tc) -55°C ~ 150°C (TJ)
IPS50R520CP

IPS50R520CP

MOSFET N-CH 550V 7.1A TO251-3

Infineon Technologies

5,819 -
IPS50R520CP

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V Through Hole 3.5V @ 250µA 17 nC @ 10 V 550 V ±20V 680 pF @ 100 V - - PG-TO251-3-11 - 66W (Tc) -55°C ~ 150°C (TJ)
SPB35N10

SPB35N10

MOSFET N-CH 100V 35A TO263-3

Infineon Technologies

2,327 -
SPB35N10

数据表

SIPMOS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 44mOhm @ 26.4A, 10V Surface Mount 4V @ 83µA 65 nC @ 10 V 100 V ±20V 1570 pF @ 25 V - - PG-TO263-3-2 - 150W (Tc) -55°C ~ 175°C (TJ)
AOWF380A60C

AOWF380A60C

MOSFET N-CH 600V 11A TO262F

Alpha & Omega Semiconductor Inc.

8,177 -
AOWF380A60C

数据表

aMOS5™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tj) 10V 380mOhm @ 5.5A, 10V Through Hole 3.8V @ 250µA 20 nC @ 10 V 600 V ±20V 955 pF @ 100 V - - TO-262F - 25W (Tc) -55°C ~ 150°C (TJ)
R5011ANX

R5011ANX

MOSFET N-CH 500V 11A TO220FM

Rohm Semiconductor

7,903 -
R5011ANX

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 500mOhm @ 5.5A, 10V Through Hole 4.5V @ 1mA 30 nC @ 10 V 500 V ±30V 1000 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
TPCP8011,LF

TPCP8011,LF

PB-F POWER MOSFET TRANSISTOR PS-

Toshiba Semiconductor and Storage

2,723 -
TPCP8011,LF

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta) 6V, 10V 51.2mOhm @ 2.5A, 10V Surface Mount 3V @ 1mA 11.8 nC @ 10 V 40 V ±20V 505 pF @ 10 V AEC-Q101 - PS-8 Automotive 940mW (Ta) 175°C
DMTH4005SPS-13

DMTH4005SPS-13

MOSFET N-CH 40V 20.9A PWRDI5060

Diodes Incorporated

2,485 -
DMTH4005SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20.9A (Ta), 100A (Tc) 10V 3.7mOhm @ 50A, 10V Surface Mount 4V @ 250µA 49.1 nC @ 10 V 40 V ±20V 3062 pF @ 20 V - - PowerDI5060-8 - 2.6W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
SQS180ENW-T1_GE3

SQS180ENW-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix

2,481 -
SQS180ENW-T1_GE3

数据表

TrenchFET® GenIV PowerPAK® 1212-8SLW Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 72A (Tc) 10V 8.67mOhm @ 10A, 10V Surface Mount, Wettable Flank 3.5V @ 250µA 56 nC @ 10 V 80 V ±20V 3092 pF @ 25 V AEC-Q101 - PowerPAK® 1212-8SLW Automotive 119W (Tc) -55°C ~ 175°C (TJ)
ZXMN6A25KTC

ZXMN6A25KTC

MOSFET N-CH 60V 7A TO252-3

Diodes Incorporated

2,052 -
ZXMN6A25KTC

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 50mOhm @ 3.6A, 10V Surface Mount 3V @ 250µA 20.4 nC @ 10 V 60 V ±20V 1063 pF @ 30 V - - TO-252-3 - 2.11W (Ta) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户