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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM6N60CH C5GMOSFET N-CHANNEL 600V 6A TO251 Taiwan Semiconductor Corporation |
2,878 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1.25Ohm @ 3A, 10V | Through Hole | 4V @ 250µA | 20.7 nC @ 10 V | 600 V | ±30V | 1248 pF @ 25 V | - | - | TO-251 (IPAK) | - | 89W (Tc) | 150°C (TJ) |
|
|
TSM4NB65CH C5GMOSFET N-CHANNEL 650V 4A TO251 Taiwan Semiconductor Corporation |
2,646 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 3.37Ohm @ 2A, 10V | Through Hole | 4.5V @ 250µA | 13.46 nC @ 10 V | 650 V | ±30V | 549 pF @ 25 V | - | - | TO-251 (IPAK) | - | 70W (Tc) | -55°C ~ 150°C (TJ) |
|
TSM2311CX-01 RFGMOSFET P-CH 20V 4A SOT23 Taiwan Semiconductor Corporation |
5,732 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 2.5V, 4.5V | 55mOhm @ 4A, 4.5V | Surface Mount | 1.4V @ 250µA | 9 nC @ 4.5 V | 20 V | ±8V | 640 pF @ 6 V | - | - | SOT-23 | - | 900mW (Ta) | -55°C ~ 150°C (TJ) |
|
|
TSM180N03CS30V, 9A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
8,188 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 4.5V, 10V | 18mOhm @ 8A, 10V | Surface Mount | 2V @ 250µA | 4.1 nC @ 4.5 V | 30 V | ±20V | 345 pF @ 25 V | - | - | 8-SOP | - | 2.5W (Tc) | 150°C (TJ) |
|
|
TSM180N03PQ3330V, 25A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
8,508 | - |
|
数据表 |
- | 8-PowerWDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | Surface Mount | 2.5V @ 250µA | 4.1 nC @ 4.5 V | 30 V | ±20V | 345 pF @ 25 V | - | - | 8-PDFN (3.1x3.1) | - | 21W (Tc) | 150°C (TJ) |
|
TSM10N60CZ C0GMOSFET N-CH 600V 10A TO220 Taiwan Semiconductor Corporation |
8,092 | - |
|
数据表 |
- | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 750mOhm @ 5A, 10V | Through Hole | 4V @ 250µA | 45.8 nC @ 10 V | 600 V | ±30V | 1738 pF @ 25 V | - | - | TO-220 | - | 166W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSM22P10CI C0GMOSFET P-CH 100V 22A ITO220 Taiwan Semiconductor Corporation |
5,265 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | Through Hole | 3V @ 250µA | 42 nC @ 10 V | 100 V | ±25V | 2250 pF @ 30 V | - | - | ITO-220 | - | 48W (Tc) | 150°C (TJ) |
|
|
TSM22P10CZ C0GMOSFET P-CH 100V 22A TO220 Taiwan Semiconductor Corporation |
8,050 | - |
|
数据表 |
- | TO-220-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 4.5V, 10V | 140mOhm @ 20A, 10V | Through Hole | 3V @ 250µA | 42 nC @ 10 V | 100 V | ±25V | 2250 pF @ 30 V | - | - | TO-220 | - | 125W (Tc) | 150°C (TJ) |
|
|
TSM230N06CI C0GMOSFET N-CH 60V 50A ITO220 Taiwan Semiconductor Corporation |
6,455 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | Through Hole | 2.5V @ 250µA | 28 nC @ 10 V | 60 V | ±20V | 1680 pF @ 25 V | - | - | ITO-220 | - | 42W (Tc) | 150°C (TJ) |
|
|
TSM480P06CI C0GMOSFET P-CH 60V 20A ITO220 Taiwan Semiconductor Corporation |
6,126 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20A (Tc) | 4.5V, 10V | 48mOhm @ 8A, 10V | Through Hole | 2.2V @ 250µA | 22.4 nC @ 10 V | 60 V | ±20V | 1250 pF @ 30 V | - | - | ITO-220 | - | 27W (Tc) | -50°C ~ 150°C (TJ) |
