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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM2309CX

TSM2309CX

-60V, -3.1A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

3,289 -
TSM2309CX

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.1A (Tc) 4.5V, 10V 190mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 8.2 nC @ 10 V 60 V ±20V 425 pF @ 30 V - - SOT-23 - 1.56W (Tc) 150°C (TJ)
TSM650P03CX

TSM650P03CX

-30V, -4.1A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

9,835 -
TSM650P03CX

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.1A (Tc) 2.5V, 10V 65mOhm @ 4A, 10V Surface Mount 900mV @ 250µA 8 nC @ 4.5 V 30 V ±12V 810 pF @ 15 V - - SOT-23 - 1.56W (Tc) 150°C (TJ)
TSM2N7000KCT A3G

TSM2N7000KCT A3G

MOSFET N-CHANNEL 60V 300MA TO92

Taiwan Semiconductor Corporation

5,999 -
TSM2N7000KCT A3G

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Cut Tape (CT) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 300mA (Ta) 5V, 10V 5Ohm @ 100mA, 10V Through Hole 2.5V @ 250µA 0.4 nC @ 4.5 V 60 V ±20V 60 pF @ 25 V - - TO-92 - 400mW (Ta) -55°C ~ 150°C (TJ)
TSM4NC60CI C0G

TSM4NC60CI C0G

MOSFET N-CH 600V 4A ITO220AB

Taiwan Semiconductor Corporation

8,026 -
TSM4NC60CI C0G

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 1.3A, 10V Through Hole 4V @ 250µA 18 nC @ 10 V 600 V ±30V 654 pF @ 50 V - - ITO-220AB - 40W (Tc) -55°C ~ 150°C (TJ)
TSM2N60ECH C5G

TSM2N60ECH C5G

MOSFET N-CHANNEL 600V 2A TO251

Taiwan Semiconductor Corporation

8,846 -
TSM2N60ECH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4Ohm @ 1A, 10V Through Hole 5V @ 250µA 9.5 nC @ 10 V 600 V ±30V 362 pF @ 25 V - - TO-251 (IPAK) - 52.1W (Tc) -55°C ~ 150°C (TJ)
TSM900N10CH X0G

TSM900N10CH X0G

MOSFET N-CH 100V 15A TO251

Taiwan Semiconductor Corporation

7,604 -
TSM900N10CH X0G

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 90mOhm @ 5A, 10V Through Hole 2.5V @ 250µA 9.3 nC @ 10 V 100 V ±20V 1480 pF @ 50 V - - TO-251 (IPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
TSM3446CX6

TSM3446CX6

20V, 5.3A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

7,709 -
TSM3446CX6

数据表

- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 2.5V, 4.5V 33mOhm @ 5.3A, 4.5V Surface Mount 1V @ 250µA 12.5 nC @ 4.5 V 20 V ±12V 700 pF @ 10 V - - SOT-26 - 2W (Ta) -55°C ~ 150°C (TJ)
TSM240N03CX

TSM240N03CX

30V, 6.5A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

7,309 -
TSM240N03CX

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.5A (Tc) 4.5V, 10V 24mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 4.1 nC @ 4.5 V 30 V ±20V 345 pF @ 25 V - - SOT-23 - 1.56W (Tc) 150°C (TJ)
TSM320N03CX

TSM320N03CX

30V, 5.5A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

7,229 -
TSM320N03CX

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta), 5.5A (Tc) 2.5V, 4.5V 32mOhm @ 4A, 4.5V Surface Mount 900mV @ 250µA 8.9 nC @ 4.5 V 30 V ±12V 792 pF @ 15 V - - SOT-23 - 1W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ)
TSM500P02CX

TSM500P02CX

-20V, -4.7A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

9,773 -
TSM500P02CX

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.7A (Tc) 1.8V, 4.5V 50mOhm @ 3A, 4.5V Surface Mount 800mV @ 250µA 9.6 nC @ 4.5 V 20 V ±10V 850 pF @ 10 V - - SOT-23 - 1.56W (Tc) 150°C (TJ)
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