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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM4806CS

TSM4806CS

20V, 28A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,002 -
TSM4806CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta) 1.8V, 4.5V 20mOhm @ 20A, 4.5V Surface Mount 1V @ 250µA 12.3 nC @ 4.5 V 20 V ±8V 961 pF @ 15 V - - 8-SOP - 2W (Ta) -55°C ~ 150°C (TJ)
TSM600P03CS

TSM600P03CS

-30V, -4.7A, SINGLE P-CHANNEL PO

Taiwan Semiconductor Corporation

9,292 -
TSM600P03CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.7A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 5.1 nC @ 4.5 V 30 V ±20V 560 pF @ 15 V - - 8-SOP - 2.1W (Tc) -55°C ~ 150°C (TJ)
TSM3457CX6

TSM3457CX6

-30V, -5A, SINGLE P-CHANNEL POWE

Taiwan Semiconductor Corporation

8,403 -
TSM3457CX6

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5A (Ta) 4.5V, 10V 60mOhm @ 5A, 10V Surface Mount 3V @ 250µA 9.52 nC @ 10 V 30 V ±20V 551.57 pF @ 15 V - - SOT-26 - 2W (Ta) -55°C ~ 150°C (TJ)
TSM2N7002KCX RFG

TSM2N7002KCX RFG

MOSFET N-CH 60V 300MA SOT23

Taiwan Semiconductor Corporation

4,866 -
TSM2N7002KCX RFG

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Ta) 4.5V, 10V 2Ohm @ 300mA, 10V Surface Mount 2.5V @ 250µA 0.4 nC @ 4.5 V 60 V ±20V 30 pF @ 25 V - - SOT-23 - 300mW (Ta) -55°C ~ 150°C (TJ)
TSM6N50CH C5G

TSM6N50CH C5G

MOSFET N-CH 500V 5.6A TO251

Taiwan Semiconductor Corporation

4,252 -
TSM6N50CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.6A (Ta) 10V 1.4Ohm @ 2.8A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 500 V ±30V 900 pF @ 25 V - - TO-251 (IPAK) - 90W (Tc) 150°C (TJ)
TSM1NB60SCT A3

TSM1NB60SCT A3

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation

2,967 -
TSM1NB60SCT A3

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 10Ohm @ 250mA, 10V Through Hole 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-92 - 2.5W (Tc) -55°C ~ 150°C (TJ)
TSM4425CS RLG

TSM4425CS RLG

MOSFET P-CH 30V 11A 8SOP

Taiwan Semiconductor Corporation

3,623 -
TSM4425CS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 3V @ 250µA 64 nC @ 10 V 30 V ±20V 3680 pF @ 8 V - - 8-SOP - 2.5W (Ta) -55°C ~ 150°C (TJ)
TSM1NB60SCT B0

TSM1NB60SCT B0

MOSFET N-CH 600V 500MA TO92

Taiwan Semiconductor Corporation

7,217 -
TSM1NB60SCT B0

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Tc) 10V 10Ohm @ 250mA, 10V Through Hole 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-92 - 2.5W (Tc) -55°C ~ 150°C (TJ)
TSM8N70CI C0

TSM8N70CI C0

MOSFET N-CH 700V 8A ITO220AB

Taiwan Semiconductor Corporation

7,214 -
TSM8N70CI C0

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 900mOhm @ 4A, 10V Through Hole 4V @ 250µA 32 nC @ 10 V 700 V ±30V 2006 pF @ 25 V - - ITO-220AB - 40W (Tc) 150°C (TJ)
TSM4NB60CZ C0G

TSM4NB60CZ C0G

MOSFET N-CHANNEL 600V 4A TO220

Taiwan Semiconductor Corporation

8,708 -
TSM4NB60CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 14.5 nC @ 10 V 600 V ±30V 500 pF @ 25 V - - TO-220 - 50W (Tc) -55°C ~ 150°C (TJ)
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