Taiwan Semiconductor Corporation|场效应晶体管（FETs）、MOSFETs - 页 45

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM2N7002KCX 60V, 0.3A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	5,365	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	300mA (Ta)	4.5V, 10V	2Ohm @ 300mA, 10V	Surface Mount	2.5V @ 250µA	0.6 nC @ 4.5 V	60 V	±20V	30 pF @ 25 V	-	-	SOT-23	-	300mW (Ta)	-55°C ~ 150°C (TJ)
TSM1N45CT B0G MOSFET N-CH 450V 500MA TO92 Taiwan Semiconductor Corporation	9,741	-	询价单	数据表	-	TO-226-3, TO-92-3 (TO-226AA)	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	500mA (Tc)	10V	4.25Ohm @ 250mA, 10V	Through Hole	4.25V @ 250µA	6.5 nC @ 10 V	450 V	±30V	235 pF @ 25 V	-	-	TO-92	-	2W (Tc)	-55°C ~ 150°C (TJ)
TSM2NB65CH X0G MOSFET N-CHANNEL 650V 2A TO251 Taiwan Semiconductor Corporation	4,573	-	询价单	数据表	-	TO-251-3 Stub Leads, IPAK	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2A (Tc)	10V	5Ohm @ 1A, 10V	Through Hole	4V @ 250µA	13 nC @ 10 V	650 V	±20V	390 pF @ 25 V	-	-	TO-251 (IPAK)	-	65W (Tc)	-55°C ~ 150°C (TJ)
TSM6NB60CZ C0G MOSFET N-CHANNEL 600V 6A TO220 Taiwan Semiconductor Corporation	7,936	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	1.6Ohm @ 3A, 10V	Through Hole	4.5V @ 250µA	18.3 nC @ 10 V	600 V	±30V	872 pF @ 25 V	-	-	TO-220	-	40W (Tc)	-55°C ~ 150°C (TJ)
TSM650P02CX -20V, -4.1A, SINGLE P-CHANNEL PO Taiwan Semiconductor Corporation	9,422	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	4.1A (Tc)	1.8V, 4.5V	65mOhm @ 3A, 4.5V	Surface Mount	800mV @ 250µA	6.4 nC @ 4.5 V	20 V	±10V	515 pF @ 10 V	-	-	SOT-23	-	1.56W (Tc)	150°C (TJ)
TSM9434CS RLG -20V, -6.4A, SINGLE P-CHANNEL PO Taiwan Semiconductor Corporation	8,897	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	6.4A (Tc)	2.5V, 4.5V	40mOhm @ 6.4A, 4.5V	Surface Mount	1V @ 250µA	19 nC @ 4.5 V	20 V	±8V	1020 pF @ 10 V	-	-	8-SOP	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
TSM850N06CX 60V, 3A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	3,044	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	2.3A (Ta), 3A (Tc)	4.5V, 10V	85mOhm @ 2.3A, 10V	Surface Mount	2.5V @ 250µA	9.5 nC @ 10 V	60 V	±20V	529 pF @ 30 V	-	-	SOT-23	-	1W (Ta), 1.7W (Tc)	-55°C ~ 150°C (TJ)
TSM210N02CX 20V, 6.7A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	7,461	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	6.7A (Tc)	1.8V, 4.5V	21mOhm @ 4A, 4.5V	Surface Mount	800mV @ 250µA	5.8 nC @ 4.5 V	20 V	±10V	600 pF @ 10 V	-	-	SOT-23	-	1.56W (Tc)	150°C (TJ)
TSM126CX RFG MOSFET N-CH 600V 30MA SOT23 Taiwan Semiconductor Corporation	9,902	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Not For New Designs	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	30mA (Tc)	0V, 10V	800Ohm @ 16mA, 10V	Surface Mount	1V @ 8µA	1.18 nC @ 4.5 V	600 V	±20V	51.42 pF @ 25 V	-	-	SOT-23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
TSM250N02CX 20V, 5.8A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	6,767	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	5.8A (Tc)	1.8V, 4.5V	25mOhm @ 4A, 4.5V	Surface Mount	800mV @ 250µA	7.7 nC @ 4.5 V	20 V	±10V	535 pF @ 10 V	-	-	SOT-23	-	1.56W (Tc)	150°C (TJ)

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