Taiwan Semiconductor Corporation|场效应晶体管（FETs）、MOSFETs - 页 41

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM60NB099CF 600V, 38A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	8,036	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	99mOhm @ 5.3A, 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	600 V	±30V	2587 pF @ 100 V	-	-	ITO-220S	-	69W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB099CZ 600V, 38A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	8,141	-	询价单	数据表	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	99mOhm @ 11.3A, 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	600 V	±30V	2587 pF @ 100 V	-	-	TO-220	-	298W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB099PW 600V, 38A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	3,252	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	38A (Tc)	10V	99mOhm @ 11.7A, 10V	Through Hole	4V @ 250µA	62 nC @ 10 V	600 V	±30V	2587 pF @ 100 V	-	-	TO-247	-	329W (Tc)	-55°C ~ 150°C (TJ)
TSM025NB04CR RLG MOSFET N-CH 40V 24A/161A 8PDFN Taiwan Semiconductor Corporation	696	-	询价单	数据表	-	8-PowerLDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta), 161A (Tc)	10V	2.5mOhm @ 24A, 10V	Surface Mount	4V @ 250µA	113 nC @ 10 V	40 V	±20V	7150 pF @ 20 V	-	-	8-PDFN (5.2x5.75)	-	3.1W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
TSM025NB04LCR RLG MOSFET N-CH 40V 24A/161A 8PDFN Taiwan Semiconductor Corporation	262	-	询价单	数据表	-	8-PowerLDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Ta), 161A (Tc)	4.5V, 10V	2.5mOhm @ 24A, 10V	Surface Mount	2.5V @ 250µA	112 nC @ 10 V	40 V	±20V	6435 pF @ 20 V	-	-	8-PDFN (5.2x5.75)	-	3.1W (Ta), 136W (Tc)	-55°C ~ 175°C (TJ)
TSM60NB900CP ROG MOSFET N-CHANNEL 600V 4A TO252 Taiwan Semiconductor Corporation	1,975	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	900mOhm @ 1.2A, 10V	Surface Mount	4V @ 250µA	9.6 nC @ 10 V	600 V	±30V	315 pF @ 100 V	-	-	TO-252 (DPAK)	-	36.8W (Tc)	-55°C ~ 150°C (TJ)
TSM025NH04LCR RLG 40V, 100A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	4,995	-	询价单	数据表	PerFET™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Ta), 100A (Tc)	4.5V, 10V	2.5mOhm @ 50A, 10V	Surface Mount, Wettable Flank	2.2V @ 250µA	63.3 nC @ 10 V	40 V	±16V	4179 pF @ 25 V	-	-	8-PDFNU (5x6)	-	136W (Tc)	-55°C ~ 175°C (TJ)
TSM025NH04CR RLG 40V, 100A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	4,930	-	询价单	数据表	PerFET™	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	26A (Ta), 100A (Tc)	7V, 10V	2.5mOhm @ 50A, 10V	Surface Mount, Wettable Flank	3.6V @ 250µA	59 nC @ 10 V	40 V	±20V	3794 pF @ 25 V	-	-	8-PDFNU (5x6)	-	136W (Tc)	-55°C ~ 175°C (TJ)
TSM60NB041PW 600V, 78A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	2,916	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	78A (Tc)	10V	41mOhm @ 21.7A, 10V	Through Hole	4V @ 250µA	139 nC @ 10 V	600 V	±30V	6120 pF @ 100 V	-	-	TO-247	-	446W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB380CP ROG MOSFET N-CH 600V 9.5A TO252 Taiwan Semiconductor Corporation	212	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	9.5A (Tc)	10V	380mOhm @ 2.85A, 10V	Surface Mount	4V @ 250µA	19.4 nC @ 10 V	600 V	±30V	795 pF @ 100 V	-	-	TO-252 (DPAK)	-	83W (Tc)	-55°C ~ 150°C (TJ)

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