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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM060NB06LCZ C0G

TSM060NB06LCZ C0G

60V, 111A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

3,980 -
TSM060NB06LCZ C0G

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 111A (Tc) 4.5V, 10V 6mOhm @ 13A, 10V Through Hole 2.5V @ 250µA 107 nC @ 10 V 60 V ±20V 6273 pF @ 30 V - - TO-220 - 2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
TSM3N80CZ C0G

TSM3N80CZ C0G

MOSFET N-CHANNEL 800V 3A TO220

Taiwan Semiconductor Corporation

2,502 -
TSM3N80CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 4.2Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 800 V ±30V 696 pF @ 25 V - - TO-220 - 94W (Tc) -55°C ~ 150°C (TJ)
TSM85N10CZ C0G

TSM85N10CZ C0G

MOSFET N-CHANNEL 100V 81A TO220

Taiwan Semiconductor Corporation

3,811 -
TSM85N10CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 81A (Tc) 10V 10mOhm @ 40A, 10V Through Hole 4V @ 250µA 154 nC @ 10 V 100 V ±20V 3900 pF @ 30 V - - TO-220 - 210W (Tc) -55°C ~ 150°C (TJ)
TSM60NC620CI C0G

TSM60NC620CI C0G

600V, 7A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,990 -
TSM60NC620CI C0G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Through Hole 5V @ 1mA 15 nC @ 10 V 600 V ±20V 506 pF @ 300 V - - ITO-220 - 46W (Tc) -55°C ~ 150°C (TJ)
TSM680P06CH

TSM680P06CH

-60V, -18A, SINGLE P-CHANNEL POW

Taiwan Semiconductor Corporation

2,314 -
TSM680P06CH

数据表

- TO-251-3 Stub Leads, IPAK Tube Active P-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 68mOhm @ 6A, 10V Through Hole 2.2V @ 250µA 16.4 nC @ 10 V 60 V ±20V 870 pF @ 30 V - - TO-251S (IPAK SL) - 20W (Tc) -55°C ~ 150°C (TJ)
TSM085P03CV

TSM085P03CV

-30, -64, SINGLE P-CHANNEL

Taiwan Semiconductor Corporation

3,981 -
TSM085P03CV

数据表

- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 14A (Ta), 64A (Tc) 4.5V, 10V 8.5mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 55 nC @ 10 V 30 V ±20V 3234 pF @ 15 V - - 8-PDFN (3.1x3.1) - 2.4W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
TSM040N03CP

TSM040N03CP

30V, 90A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

7,609 -
TSM040N03CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4mOhm @ 24A, 10V Surface Mount 2.5V @ 250µA 24 nC @ 4.5 V 30 V ±20V 2200 pF @ 25 V - - TO-252 (DPAK) - 88W (Tc) 150°C (TJ)
TSM040N03CP ROG

TSM040N03CP ROG

MOSFET N-CHANNEL 30V 90A TO252

Taiwan Semiconductor Corporation

10,000 -
TSM040N03CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4mOhm @ 24A, 10V Surface Mount 2.5V @ 250µA 53 nC @ 4.5 V 30 V ±20V 2200 pF @ 25 V - - TO-252 (DPAK) - 88W (Tc) 150°C (TJ)
TSM085P03CS

TSM085P03CS

-30, -34, SINGLE P-CHANNEL

Taiwan Semiconductor Corporation

4,581 -
TSM085P03CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 34A (Tc) 4.5V, 10V 8.5mOhm @ 13A, 10V Surface Mount 2.5V @ 250µA 56 nC @ 10 V 30 V ±20V 3216 pF @ 15 V - - 8-SOP - 14W (Tc) -55°C ~ 150°C (TJ)
TSM035NB04LCZ C0G

TSM035NB04LCZ C0G

40V, 157A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

1,884 -
TSM035NB04LCZ C0G

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 157A (Tc) 4.5V, 10V 3.5mOhm @ 18A, 10V Through Hole 2.5V @ 250µA 111 nC @ 10 V 40 V ±20V 6350 pF @ 20 V - - TO-220 - 2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
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