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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCT020W120G3-4AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
4,205 | - |
|
数据表 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT020HU120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
6,493 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCT012H90G3AGH2PAK-7 STMicroelectronics |
9,849 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 110A (Tc) | 15V, 18V | 15.8mOhm @ 60A, 18V | Surface Mount | 4.2V @ 10mA | 138 nC @ 18 V | 900 V | +18V, -5V | 3880 pF @ 600 V | AEC-Q101 | - | H2PAK-7 | Automotive | 625W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SCT016H120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
3,768 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
2N7000MOSFET N-CH 60V 350MA TO92-3 STMicroelectronics |
9,468 | - |
|
数据表 |
STripFET™ | TO-226-3, TO-92-3 (TO-226AA) | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 350mA (Tc) | 4.5V, 10V | 5Ohm @ 500mA, 10V | Through Hole | 3V @ 250µA | 2 nC @ 5 V | 60 V | ±18V | 43 pF @ 25 V | - | - | TO-92-3 | - | 1W (Tc) | -55°C ~ 150°C (TJ) |
|
STI11NM80MOSFET N-CH 800V 11A I2PAK STMicroelectronics |
5,712 | - |
|
数据表 |
MDmesh™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 400mOhm @ 5.5A, 10V | Through Hole | 5V @ 250µA | 43.6 nC @ 10 V | 800 V | ±30V | 1630 pF @ 25 V | - | - | I2PAK (TO-262) | - | 150W (Tc) | -65°C ~ 150°C (TJ) |
|
|
STB70NF03L-1MOSFET N-CH 30V 70A I2PAK STMicroelectronics |
3,508 | - |
|
数据表 |
STripFET™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 5V, 10V | 9.5mOhm @ 35A, 10V | Through Hole | 1V @ 250µA | 30 nC @ 5 V | 30 V | ±18V | 1440 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 100W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STI300N4F6MOSFET N CH 40V 160A I2PAK STMicroelectronics |
6,739 | - |
|
数据表 |
DeepGATE™, STripFET™ VI | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 160A (Tc) | 10V | 2.2mOhm @ 80A, 10V | Through Hole | 4V @ 250µA | 240 nC @ 10 V | 40 V | ±20V | 13800 pF @ 25 V | - | - | TO-262 (I2PAK) | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
STULED656MOSFET N-CH 650V 6A IPAK STMicroelectronics |
7,394 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1.3Ohm @ 2.7A, 10V | Through Hole | 4.5V @ 50µA | 34 nC @ 10 V | 650 V | ±30V | 895 pF @ 100 V | - | - | TO-251 (IPAK) | - | 70W (Tc) | 150°C (TJ) |
|
|
STI5N52UMOSFET N-CH 525V 4.4A I2PAK STMicroelectronics |
3,006 | - |
|
数据表 |
UltraFASTmesh™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | Through Hole | 4.5V @ 50µA | 16.9 nC @ 10 V | 525 V | ±30V | 529 pF @ 25 V | - | - | I2PAK | - | 70W (Tc) | -55°C ~ 150°C (TJ) |
