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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SCT070H120G3AGH2PAK-7 STMicroelectronics |
9,135 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | Surface Mount | 4.2V @ 1mA | 37 nC @ 18 V | 1200 V | +18V, -5V | 900 pF @ 850 V | AEC-Q101 | - | H2PAK-7 | Automotive | 223W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SCT070W120G3-4AGTO247-4 STMicroelectronics |
4,612 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | Through Hole | 4.2V @ 1mA | 41 nC @ 18 V | 1200 V | +18V, -5V | 900 pF @ 850 V | AEC-Q101 | - | TO-247-4 | Automotive | 236W (Tc) | -55°C ~ 200°C (TJ) |
|
|
SCT070HU120G3AGHU3PAK STMicroelectronics |
6,560 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 30A (Tc) | 15V, 18V | 87mOhm @ 15A, 18V | Surface Mount | 4.2V @ 1mA | 37 nC @ 18 V | 1200 V | +22V, -10V | 900 pF @ 850 V | AEC-Q101 | - | HU3PAK | Automotive | 223W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SCT040W120G3-4SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
7,708 | - |
|
数据表 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCTWA40N120G2VDISCRETE STMicroelectronics |
7,567 | - |
|
数据表 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | Through Hole | 4.9V @ 1mA | 61 nC @ 18 V | 1200 V | +18V, -5V | 1233 pF @ 800 V | - | - | TO-247 Long Leads | - | 278W (Tc) | -55°C ~ 200°C (TJ) |
|
|
SCTWA40N120G2V-4DISCRETE STMicroelectronics |
3,763 | - |
|
数据表 |
- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | Through Hole | 4.9V @ 1mA | 61 nC @ 18 V | 1200 V | +18V, -5V | 1233 pF @ 800 V | - | - | TO-247-4 | - | 277W (Tc) | -55°C ~ 200°C (TJ) |
|
|
SCT040H120G3AGH2PAK-7 STMicroelectronics |
2,115 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 40A (Tc) | 15V, 18V | 54mOhm @ 16A, 18V | Surface Mount | 4.2V @ 5mA | 54 nC @ 18 V | 1200 V | +18V, -5V | 1329 pF @ 800 V | AEC-Q101 | - | H2PAK-7 | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SCT040HU120G3AGAUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
5,288 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCTWA40N12G24AGTO247-4 STMicroelectronics |
9,812 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | Through Hole | 5V @ 1mA | 63 nC @ 18 V | 1200 V | +22V, -10V | 1230 pF @ 800 V | AEC-Q101 | - | TO-247-4 | Automotive | 290W (Tc) | -55°C ~ 200°C (TJ) |
|
|
SCT025H120G3-7SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
8,556 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
