STMicroelectronics|场效应晶体管（FETs）、MOSFETs - 页 199

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
STW38N65M5 MOSFET N-CH 650V 30A TO247 STMicroelectronics	6,267	-	询价单	数据表	MDmesh™ V	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	30A (Tc)	10V	95mOhm @ 15A, 10V	Through Hole	5V @ 250µA	71 nC @ 10 V	650 V	±25V	3000 pF @ 100 V	-	-	TO-247-3	-	190W (Tc)	150°C (TJ)
STW21N90K5 MOSFET N-CH 900V 18.5A TO247-3 STMicroelectronics	5,271	-	询价单	数据表	SuperMESH5™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	18.5A (Tc)	10V	299mOhm @ 9A, 10V	Through Hole	5V @ 100µA	43 nC @ 10 V	900 V	±30V	1645 pF @ 100 V	-	-	TO-247-3	-	250W (Tc)	-55°C ~ 150°C (TJ)
STW50N65DM6 MOSFET N-CH 650V 33A TO247-3 STMicroelectronics	7,948	-	询价单	数据表	MDmesh™ DM6	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	33A (Tc)	10V	91mOhm @ 16.5A, 10V	Through Hole	4.75V @ 250µA	52.5 nC @ 10 V	650 V	±25V	52500 pF @ 100 V	-	-	TO-247 Long Leads	-	250W (Tc)	-55°C ~ 150°C (TJ)
STW58N60DM2AG MOSFET N-CH 600V 50A TO247 STMicroelectronics	3,263	-	询价单	数据表	MDmesh™ DM2	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	10V	60mOhm @ 25A, 10V	Through Hole	5V @ 250µA	90 nC @ 10 V	600 V	±25V	4100 pF @ 100 V	AEC-Q101	-	TO-247-3	Automotive	360W (Tc)	-55°C ~ 150°C (TJ)
STW12N170K5 MOSFET N-CH 1700V 5A TO247 STMicroelectronics	6,332	-	询价单	数据表	MDmesh™ K5	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	5A (Tc)	10V	2.9Ohm @ 2.5A, 10V	Through Hole	5V @ 100µA	37 nC @ 10 V	1700 V	±30V	1380 pF @ 100 V	-	-	TO-247-3	-	250W (Tc)	-55°C ~ 150°C (TJ)
STW70N60DM2 N-channel 600 V, 37 mOhm typ., 6 STMicroelectronics	2,669	-	询价单	数据表	MDmesh™ DM2	TO-247-3	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	66A (Tc)	10V	42mOhm @ 33A, 10V	Through Hole	5V @ 250µA	121 nC @ 10 V	600 V	±25V	5508 pF @ 100 V	-	-	TO-247-3	-	446W (Tc)	-55°C ~ 150°C (TJ)
STW75N65DM6-4 N-CHANNEL 650 V, 33 MOHM TYP., 7 STMicroelectronics	4,564	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	10V	36mOhm @ 37.5A, 10V	Through Hole	4.75V @ 250µA	118 nC @ 10 V	650 V	±25V	5700 pF @ 100 V	-	-	TO-247-4	-	480W (Tc)	-55°C ~ 150°C (TJ)
SCT040H65G3AG AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics	5,733	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	30A (Tc)	15V, 18V	55mOhm @ 20A, 18V	Surface Mount	4.2V @ 1mA	39.5 nC @ 18 V	650 V	+18V, -5V	920 pF @ 400 V	AEC-Q101	-	H2PAK-7	Automotive	221W (Tc)	-55°C ~ 175°C (TJ)
SCTW35N65G2V SICFET N-CH 650V 45A HIP247 STMicroelectronics	3,437	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	Through Hole	5V @ 1mA	73 nC @ 20 V	650 V	+22V, -10V	1370 pF @ 400 V	AEC-Q101	-	HiP247™	Automotive	240W (Tc)	-55°C ~ 200°C (TJ)
SCTW35N65G2VAG SICFET N-CH 650V 45A HIP247 STMicroelectronics	6,169	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	45A (Tc)	18V, 20V	67mOhm @ 20A, 20V	Through Hole	5V @ 1mA	73 nC @ 20 V	650 V	+22V, -10V	1370 pF @ 400 V	AEC-Q101	-	HiP247™	Automotive	240W (Tc)	-55°C ~ 200°C (TJ)

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