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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STW40N95DK5MOSFET N-CHANNEL 950V 38A TO247 STMicroelectronics |
2,536 | - |
|
数据表 |
MDmesh™ DK5 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 38A (Tc) | 10V | 130mOhm @ 19A, 10V | Through Hole | 5V @ 100µA | 100 nC @ 10 V | 950 V | ±30V | 3480 pF @ 100 V | - | - | TO-247 | - | 450W (Tc) | -55°C ~ 150°C |
|
SCTH40N120G2V-7SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
8,172 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | Surface Mount | 4.9V @ 1mA | 61 nC @ 18 V | 1200 V | +22V, -10V | 1233 pF @ 800 V | - | - | H2PAK-7 | - | 238W (Tc) | -55°C ~ 175°C (TJ) |
|
SCTH40N120G2V7AGSICFET N-CH 1200V 33A H2PAK-7 STMicroelectronics |
5,870 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 33A (Tc) | 18V | 105mOhm @ 20A, 18V | Surface Mount | 5V @ 1mA | 63 nC @ 18 V | 1200 V | +22V, -10V | 1230 pF @ 800 V | AEC-Q101 | - | H2PAK-7 | Automotive | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
|
SCTW90N65G2VSICFET N-CH 650V 90A HIP247 STMicroelectronics |
3,679 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 90A (Tc) | 18V | 25mOhm @ 50A, 18V | Through Hole | 5V @ 250µA | 157 nC @ 18 V | 650 V | +22V, -10V | 3300 pF @ 400 V | - | - | HiP247™ | - | 390W (Tc) | -55°C ~ 200°C (TJ) |
|
SCTWA90N65G2V-4TRANS SJT N-CH 650V 119A HIP247 STMicroelectronics |
3,043 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 119A (Tc) | - | 24mOhm @ 50A, 18V | Through Hole | 5V @ 1mA | 157 nC @ 18 V | 650 V | +22V, -10V | 3380 pF @ 400 V | - | - | HiP247™ Long Leads | - | 565W (Tc) | -55°C ~ 200°C (TJ) |
|
STY105NM50NMOSFET N-CH 500V 110A MAX247 STMicroelectronics |
8,569 | - |
|
数据表 |
MDmesh™ II | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 22mOhm @ 52A, 10V | Through Hole | 4V @ 250µA | 326 nC @ 10 V | 500 V | ±25V | 9600 pF @ 100 V | - | - | MAX247™ | - | 625W (Tc) | -55°C ~ 150°C (TJ) |
|
STE88N65M5MOSFET N-CH 650V 88A ISOTOP STMicroelectronics |
9,233 | - |
|
数据表 |
MDmesh™ V | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 88A (Tc) | 10V | 29mOhm @ 42A, 10V | Chassis Mount | 5V @ 250µA | 204 nC @ 10 V | 650 V | ±25V | 8825 pF @ 100 V | - | - | ISOTOP | - | 494W (Tc) | 150°C (TJ) |
|
|
STE40NC60MOSFET N-CH 600V 40A ISOTOP STMicroelectronics |
4,267 | - |
|
数据表 |
PowerMESH™ II | ISOTOP | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40A (Tc) | 10V | 130mOhm @ 20A, 10V | Chassis Mount | 4V @ 250µA | 430 nC @ 10 V | 600 V | ±30V | 11100 pF @ 25 V | - | - | ISOTOP® | - | 460W (Tc) | 150°C (TJ) |
|
STB76NF75MOSFET N-CH 75V 80A D2PAK STMicroelectronics |
7,848 | - |
|
数据表 |
STripFET™ II | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | Surface Mount | 4V @ 250µA | 160 nC @ 10 V | 75 V | ±20V | 3700 pF @ 25 V | - | - | TO-263 (D2PAK) | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STF80N1K1K6N-CHANNEL 800 V, 1.0 OHM TYP., 5 STMicroelectronics |
7,644 | - |
|
数据表 |
ECOPACK® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.1Ohm @ 1.7A, 10V | Through Hole | 4V @ 50µA | 5.7 nC @ 10 V | 800 V | ±30V | 300 pF @ 400 V | - | - | TO-220FP | - | 21W (Tc) | -55°C ~ 150°C (TJ) |
