| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STL300N4F8N-CHANNEL ENHANCEMENT MODE 40V, STMicroelectronics |
4,676 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STL300N4LF8POWER FLAT 8L 6X5X1 P1.27 STMicroelectronics |
8,612 | - |
|
数据表 |
STripFET™ F8 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 4.5V, 10V | 1mOhm @ 60A, 10V | Surface Mount | 2V @ 250µA | 70 nC @ 10 V | 40 V | ±20V | 5400 pF @ 25 V | - | - | PowerFlat™ (5x6) | - | 167W (Tc) | -55°C ~ 175°C (TJ) |
|
STP80N600K6N-CHANNEL 800 V, 515 MOHM TYP., STMicroelectronics |
20 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | Through Hole | 4V @ 100µA | 10.7 nC @ 10 V | 800 V | ±30V | 540 pF @ 400 V | - | - | TO-220 | - | 86W (Tc) | -55°C ~ 150°C (TJ) |
|
STO24N60M6DISCRETE STMicroelectronics |
5,440 | - |
|
数据表 |
- | 8-PowerSFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 17A (Tc) | 10V | 190mOhm @ 8.5A, 10V | Surface Mount | 4.75V @ 250µA | 23 nC @ 10 V | 600 V | ±25V | 960 pF @ 100 V | - | - | TOLL (HV) | - | 142W (Tc) | -55°C ~ 150°C (TJ) |
|
SGT120R65AL650 V, 75 MOHM TYP., 15 A, E-MOD STMicroelectronics |
6,377 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 15A (Tc) | 6V | 120mOhm @ 5A, 6V | Surface Mount | 2.6V @ 12mA | 3 nC @ 6 V | 650 V | +6V, -10V | 125 pF @ 400 V | - | - | PowerFlat™ (5x6) HV | - | 192W (Tc) | -55°C ~ 150°C (TJ) |
|
SCT070H120G3-7SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
6,906 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STW70N65DM6-4MOSFET N-CH 650V 68A TO247-4 STMicroelectronics |
7,461 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 68A (Tc) | 10V | 40mOhm @ 34A, 10V | Through Hole | 4.75V @ 250µA | 125 nC @ 10 V | 650 V | ±25V | 4900 pF @ 100 V | AEC-Q101 | - | TO-247-4 | Automotive | 450W (Tc) | -55°C ~ 150°C (TJ) |
|
SCT040W65G3-4SILICON CARBIDE POWER MOSFET 650 STMicroelectronics |
2,863 | - |
|
数据表 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STWA65N045M9N-CHANNEL 650 V, 39 MOHM TYP., 5 STMicroelectronics |
4,116 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 54A (Tc) | 10V | 45mOhm @ 28A, 10V | Through Hole | 4.2V @ 250µA | 80 nC @ 10 V | 650 V | ±30V | 4610 pF @ 400 V | - | - | TO-247 Long Leads | - | 312W (Tc) | -55°C ~ 150°C (TJ) |
|
SCT070W120G3-4AUTOMOTIVE-GRADE SILICON CARBIDE STMicroelectronics |
9,992 | - |
|
数据表 |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |