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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STH300NH02L-6MOSFET N-CH 24V 180A H2PAK STMicroelectronics |
3,005 | - |
|
数据表 |
STripFET™ III | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 180A (Tc) | 5V, 10V | 1.2mOhm @ 80A, 10V | Surface Mount | 1V @ 250µA | 109 nC @ 10 V | 24 V | ±20V | 7050 pF @ 15 V | AEC-Q101 | - | H2PAK | Automotive | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
STL100N6LF6MOSFET N CH 60V 100A PWRFLAT 5X6 STMicroelectronics |
815 | - |
|
数据表 |
DeepGATE™, STripFET™ VI | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100A (Tc) | 4.5V, 10V | 4.5mOhm @ 11A, 10V | Surface Mount | 2.5V @ 250µA | 130 nC @ 10 V | 60 V | ±20V | 8900 pF @ 25 V | - | - | PowerFlat™ (5x6) | - | 4.8W (Tc) | -55°C ~ 175°C (TJ) |
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|
STD6NF10T4MOSFET N-CH 100V 6A DPAK STMicroelectronics |
2,177 | - |
|
数据表 |
STripFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 250mOhm @ 3A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 100 V | ±20V | 280 pF @ 25 V | - | - | DPAK | - | 30W (Tc) | -65°C ~ 175°C (TJ) |
|
STF30NM60NDMOSFET N-CH 600V 25A TO220FP STMicroelectronics |
4,650 | - |
|
数据表 |
FDmesh™ II | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 130mOhm @ 12.5A, 10V | Through Hole | 5V @ 250µA | 100 nC @ 10 V | 600 V | ±30V | 2800 pF @ 50 V | - | - | TO-220FP | - | 40W (Tc) | 150°C (TJ) |
|
STW26NM60MOSFET N-CH 600V 30A TO247-3 STMicroelectronics |
5,247 | - |
|
数据表 |
MDmesh™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 135mOhm @ 13A, 10V | Through Hole | 5V @ 250µA | 102 nC @ 10 V | 600 V | ±30V | 2900 pF @ 25 V | - | - | TO-247-3 | - | 313W (Tc) | -55°C ~ 150°C (TJ) |
|
STI30NM60NMOSFET N-CH 600V 25A I2PAK STMicroelectronics |
5,081 | - |
|
数据表 |
MDmesh™ II | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25A (Tc) | 10V | 130mOhm @ 12.5A, 10V | Through Hole | 4V @ 250µA | 91 nC @ 10 V | 600 V | ±30V | 2700 pF @ 50 V | - | - | TO-262 (I2PAK) | - | 190W (Tc) | 150°C (TJ) |
|
SCT10N120HSICFET N-CH 1200V 12A H2PAK-2 STMicroelectronics |
2,712 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 12A (Tc) | 20V | 690mOhm @ 6A, 20V | Surface Mount | 3.5V @ 250µA | 22 nC @ 20 V | 1200 V | +25V, -10V | 290 pF @ 400 V | - | - | H2Pak-2 | - | 150W (Tc) | -55°C ~ 200°C (TJ) |
|
|
STW68N65DM6DISCRETE STMicroelectronics |
6,979 | - |
|
数据表 |
- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55A (Tc) | 10V | 59mOhm @ 24A, 10V | Through Hole | 4.75V @ 250µA | 80 nC @ 10 V | 650 V | ±25V | 3528 pF @ 100 V | - | - | TO-247-3 | - | 431W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STI42N65M5MOSFET N-CH 650V 33A I2PAK STMicroelectronics |
4,333 | - |
|
数据表 |
MDmesh™ V | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 79mOhm @ 16.5A, 10V | Through Hole | 5V @ 250µA | 100 nC @ 10 V | 650 V | ±25V | 4650 pF @ 100 V | - | - | I2PAK | - | 190W (Tc) | -55°C ~ 150°C (TJ) |
|
STD2NK60Z-1MOSFET N-CH 600V 1.4A IPAK STMicroelectronics |
3,521 | - |
|
数据表 |
SuperMESH™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.4A (Tc) | 10V | 8Ohm @ 700mA, 10V | Through Hole | 4.5V @ 50µA | 10 nC @ 10 V | 600 V | ±30V | 170 pF @ 25 V | - | - | IPAK | - | 45W (Tc) | -55°C ~ 150°C (TJ) |
