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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STL33N60M2

STL33N60M2

MOSFET N-CH 600V 22A PWRFLAT HV

STMicroelectronics

7,076 -
STL33N60M2

数据表

MDmesh™ II Plus 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 135mOhm @ 10.75A, 10V Surface Mount 4V @ 250µA 47 nC @ 10 V 600 V ±25V 1700 pF @ 100 V - - PowerFlat™ (8x8) HV - 190W (Tc) 150°C (TJ)
STW30NM60N

STW30NM60N

MOSFET N-CH 600V 25A TO247-3

STMicroelectronics

5,529 -
STW30NM60N

数据表

MDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 130mOhm @ 12.5A, 10V Through Hole 4V @ 250µA 91 nC @ 10 V 600 V ±30V 2700 pF @ 50 V - - TO-247-3 - 190W (Tc) 150°C (TJ)
STB21NK50Z

STB21NK50Z

MOSFET N-CH 500V 17A D2PAK

STMicroelectronics

5,183 -
STB21NK50Z

数据表

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 270mOhm @ 8.5A, 10V Surface Mount 4.5V @ 100µA 119 nC @ 10 V 500 V ±30V 2600 pF @ 25 V AEC-Q101 - D2PAK Automotive 190W (Tc) 150°C (TJ)
STB50N25M5

STB50N25M5

MOSFET N-CH 250V 28A D2PAK

STMicroelectronics

4,533 -
STB50N25M5

数据表

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 65mOhm @ 14A, 10V Surface Mount 5V @ 100µA 44 nC @ 10 V 250 V ±25V 1700 pF @ 50 V - - TO-263 (D2PAK) - 110W (Tc) -55°C ~ 150°C (TJ)
STFW42N60M2-EP

STFW42N60M2-EP

MOSFET N-CH 600V 34A ISOWATT

STMicroelectronics

5,395 -
STFW42N60M2-EP

数据表

MDmesh™ M2 TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 10V 87mOhm @ 17A, 10V Through Hole 4V @ 250µA 55 nC @ 10 V 600 V ±25V 2370 pF @ 100 V - - TO-3PF - 63W (Tc) -55°C ~ 150°C (TJ)
STB20NM60T4

STB20NM60T4

MOSFET N-CH 600V 20A D2PAK

STMicroelectronics

3,376 -
STB20NM60T4

数据表

MDmesh™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 290mOhm @ 10A, 10V Surface Mount 5V @ 250µA 54 nC @ 10 V 600 V ±30V 1500 pF @ 25 V - - D2PAK - 192W (Tc) 150°C (TJ)
STF34NM60ND

STF34NM60ND

MOSFET N-CH 600V 29A TO220FP

STMicroelectronics

5,496 -
STF34NM60ND

数据表

FDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 110mOhm @ 14.5A, 10V Through Hole 5V @ 250µA 80.4 nC @ 10 V 600 V ±25V 2785 pF @ 50 V - - TO-220FP - 40W (Tc) 150°C (TJ)
STW36NM60ND

STW36NM60ND

MOSFET N-CH 600V 29A TO247

STMicroelectronics

7,957 -
STW36NM60ND

数据表

FDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 110mOhm @ 14.5A, 10V Through Hole 5V @ 250µA 80.4 nC @ 10 V 600 V ±25V 2785 pF @ 50 V AEC-Q101 - TO-247-3 Automotive 190W (Tc) 150°C (TJ)
STP30NM50N

STP30NM50N

MOSFET N-CH 500V 27A TO220-3

STMicroelectronics

5,107 -
STP30NM50N

数据表

MDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 115mOhm @ 13.5A, 10V Through Hole 4V @ 250µA 94 nC @ 10 V 500 V ±25V 2740 pF @ 50 V - - TO-220 - 190W (Tc) 150°C (TJ)
STW40NF20

STW40NF20

MOSFET N-CH 200V 40A TO247-3

STMicroelectronics

2,283 -
STW40NF20

数据表

STripFET™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 45mOhm @ 20A, 10V Through Hole 4V @ 250µA 75 nC @ 10 V 200 V ±20V 2500 pF @ 25 V - - TO-247-3 - 160W (Tc) -55°C ~ 150°C (TJ)
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