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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STH185N10F3-6

STH185N10F3-6

MOSFET N-CH 100V 180A H2PAK-6

STMicroelectronics

2,185 -
STH185N10F3-6

数据表

STripFET™ F3 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 4.5mOhm @ 60A, 10V Surface Mount 4V @ 250µA 114.6 nC @ 10 V 100 V ±20V 6665 pF @ 25 V AEC-Q101 - H2PAK-6 Automotive 315W (Tc) -55°C ~ 175°C (TJ)
STU1HN60K3

STU1HN60K3

MOSFET N-CH 600V 1.2A IPAK

STMicroelectronics

1,899 -
STU1HN60K3

数据表

SuperMESH3™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.2A (Tc) 10V 8Ohm @ 600mA, 10V Through Hole 4.5V @ 50µA 9.5 nC @ 10 V 600 V ±30V 140 pF @ 50 V - - TO-251 (IPAK) - 27W (Tc) -55°C ~ 150°C (TJ)
STB31N65M5

STB31N65M5

MOSFET N-CH 650V 22A D2PAK

STMicroelectronics

9,068 -
STB31N65M5

数据表

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 148mOhm @ 11A, 10V Surface Mount 5V @ 250µA 45 nC @ 10 V 650 V ±25V 1865 pF @ 100 V - - TO-263 (D2PAK) - 150W (Tc) 150°C (TJ)
STU16N65M5

STU16N65M5

MOSFET N-CH 650V 12A IPAK

STMicroelectronics

5 -
STU16N65M5

数据表

MDmesh™ V TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 299mOhm @ 6A, 10V Through Hole 5V @ 250µA 45 nC @ 10 V 650 V ±25V 1250 pF @ 100 V - - TO-251 (IPAK) - 90W (Tc) 150°C (TJ)
STP65N045M9

STP65N045M9

N-CHANNEL 650 V, 39 MOHM TYP., 5

STMicroelectronics

5,234 -
STP65N045M9

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 10V 45mOhm @ 28A, 10V Through Hole 4.2V @ 250µA 80 nC @ 10 V 650 V ±30V 4610 pF @ 400 V - - TO-220 - 245W (Tc) -55°C ~ 150°C (TJ)
STW56N65M2-4

STW56N65M2-4

MOSFET N-CH 650V 49A TO247-4L

STMicroelectronics

2,949 -
STW56N65M2-4

数据表

MDmesh™ M2 TO-247-4 Tube Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 62mOhm @ 24.5A, 10V Through Hole 4V @ 250µA 93 nC @ 10 V 650 V ±25V 3900 pF @ 100 V - - TO-247-4 - 358W (Tc) 150°C (TJ)
STP60N043DM9

STP60N043DM9

N-CHANNEL 600 V, 38 MOHM TYP., 5

STMicroelectronics

2,978 -
STP60N043DM9

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 56A (Tc) 10V 43mOhm @ 28A, 10V Through Hole 4.5V @ 250µA 78.6 nC @ 10 V 600 V ±30V 4675 pF @ 400 V - - TO-220 - 245W (Tc) -55°C ~ 150°C (TJ)
STB20NK50ZT4

STB20NK50ZT4

MOSFET N-CH 500V 17A D2PAK

STMicroelectronics

6,516 -
STB20NK50ZT4

数据表

SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 270mOhm @ 8.5A, 10V Surface Mount 4.5V @ 100µA 119 nC @ 10 V 500 V ±30V 2600 pF @ 25 V - - D2PAK - 190W (Tc) 150°C (TJ)
STW30NM60ND

STW30NM60ND

MOSFET N-CH 600V 25A TO247-3

STMicroelectronics

4,300 -
STW30NM60ND

数据表

FDmesh™ II TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 25A (Tc) 10V 130mOhm @ 12.5A, 10V Through Hole 5V @ 250µA 100 nC @ 10 V 600 V ±25V 2800 pF @ 50 V - - TO-247-3 - 190W (Tc) 150°C (TJ)
STL34N65M5

STL34N65M5

MOSFET N-CH 650V 3.2A PWRFLAT88

STMicroelectronics

3,524 -
STL34N65M5

数据表

MDmesh™ V 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 22.5A (Tc) 10V 120mOhm @ 12A, 10V Surface Mount 5V @ 250µA 62.5 nC @ 10 V 650 V ±25V 2700 pF @ 100 V - - PowerFlat™ (8x8) HV - 2.8W (Ta), 150W (Tc) 150°C (TJ)
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