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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STB15NM65N

STB15NM65N

MOSFET N-CH 650V 12A D2PAK

STMicroelectronics

6,976 -
STB15NM65N

数据表

MDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 270mOhm @ 7.75A, 10V Surface Mount 4V @ 250µA 55 nC @ 10 V 650 V ±25V 1900 pF @ 50 V - - D2PAK - 150W (Tc) -55°C ~ 150°C (TJ)
STH130N10F3-2

STH130N10F3-2

MOSFET N-CH 100V 120A H2PAK-2

STMicroelectronics

8,501 -
STH130N10F3-2

数据表

STripFET™ III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 9.3mOhm @ 60A, 10V Surface Mount 4V @ 250µA 57 nC @ 10 V 100 V ±20V 3305 pF @ 25 V - - H2PAK-2 - 250W (Tc) -55°C ~ 175°C (TJ)
STB16N65M5

STB16N65M5

MOSFET N-CH 650V 12A D2PAK

STMicroelectronics

5,025 -
STB16N65M5

数据表

MDmesh™ V TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 299mOhm @ 6A, 10V Surface Mount 5V @ 250µA 31 nC @ 10 V 650 V ±25V 1250 pF @ 100 V - - TO-263 (D2PAK) - 90W (Tc) 150°C (TJ)
STW29NK50Z

STW29NK50Z

MOSFET N-CH 500V 31A TO247-3

STMicroelectronics

2,840 -
STW29NK50Z

数据表

SuperMESH™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 31A (Tc) 10V 130mOhm @ 15.5A, 10V Through Hole 4.5V @ 150µA 266 nC @ 10 V 500 V ±30V 6110 pF @ 25 V - - TO-247-3 - 350W (Tc) -55°C ~ 150°C (TJ)
STW35N65M5

STW35N65M5

MOSFET N-CH 650V 27A TO247-3

STMicroelectronics

9,808 -
STW35N65M5

数据表

MDmesh™ V TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 27A (Tc) 10V 98mOhm @ 13.5A, 10V Through Hole 5V @ 250µA 83 nC @ 10 V 650 V ±25V 3750 pF @ 100 V - - TO-247-3 - 160W (Tc) 150°C (TJ)
STW29NK50ZD

STW29NK50ZD

MOSFET N-CH 500V 29A TO247-3

STMicroelectronics

2,978 -
STW29NK50ZD

数据表

SuperMESH™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 4.5V @ 150µA 200 nC @ 10 V 500 V ±30V 6450 pF @ 25 V - - TO-247-3 - 350W (Tc) -55°C ~ 150°C (TJ)
STF42N65M5

STF42N65M5

MOSFET N-CH 650V 33A TO220FP

STMicroelectronics

7,377 -
STF42N65M5

数据表

MDmesh™ V TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 79mOhm @ 16.5A, 10V Through Hole 5V @ 250µA 100 nC @ 10 V 650 V ±25V 4650 pF @ 100 V - - TO-220FP - 40W (Tc) 150°C (TJ)
STB12NM50ND

STB12NM50ND

MOSFET N-CH 500V 11A D2PAK

STMicroelectronics

3,099 -
STB12NM50ND

数据表

FDmesh™ II TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Surface Mount 5V @ 250µA 30 nC @ 10 V 500 V ±25V 850 pF @ 50 V - - TO-263 (D2PAK) - 100W (Tc) 150°C (TJ)
STI57N65M5

STI57N65M5

MOSFET N-CH 650V 42A I2PAK

STMicroelectronics

3,896 -
STI57N65M5

数据表

MDmesh™ V TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 63mOhm @ 21A, 10V Through Hole 5V @ 250µA 98 nC @ 10 V 650 V ±25V 4200 pF @ 100 V - - TO-262 (I2PAK) - 250W (Tc) -55°C ~ 150°C (TJ)
STWA67N60DM6

STWA67N60DM6

DISCRETE

STMicroelectronics

4,722 -
STWA67N60DM6

数据表

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 54mOhm @ 23.5A, 10V Through Hole 4.75V @ 250µA 72.5 nC @ 10 V 600 V ±25V 3400 pF @ 100 V - - TO-247 Long Leads - 431W (Tc) -55°C ~ 150°C (TJ)
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