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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RQ3E100BNTB1NCH 30V 21A POWER MOSFET: RQ3E10 Rohm Semiconductor |
6,340 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Ta), 21A (Tc) | 4.5V, 10V | 10.4mOhm @ 10A, 10V | Surface Mount | 2.5V @ 1mA | 22 nC @ 10 V | 30 V | ±20V | 1100 pF @ 15 V | - | - | 8-HSMT (3.2x3) | - | 2W (Ta), 15W (Tc) | 150°C (TJ) |
|
RW4E065GNTCL1NCH 30V 6.5A, HEML1616L7, POWER Rohm Semiconductor |
2,437 | - |
|
数据表 |
- | 6-PowerUFDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 6.5A (Ta) | 4.5V, 10V | 22.5mOhm @ 6.5A, 10V | Surface Mount | 2.5V @ 1mA | 4.3 nC @ 10 V | 30 V | ±20V | 260 pF @ 15 V | - | - | DFN1616-7T | - | 1.5W (Ta) | 150°C (TJ) |
|
|
RF4G100BGTCRNCH 40V 10A, HUML2020L8, POWER M Rohm Semiconductor |
2,597 | - |
|
数据表 |
- | 8-PowerUDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 10A (Ta) | 4.5V, 10V | 14.2mOhm @ 10A, 10V | Surface Mount | 2.5V @ 1mA | 10.6 nC @ 10 V | 40 V | ±20V | 530 pF @ 20 V | - | - | DFN2020-8S | - | 2W (Ta) | 150°C (TJ) |
|
|
RF4L070BGTCRNCH 60V 7A, HUML2020L8, POWER MO Rohm Semiconductor |
2,448 | - |
|
数据表 |
- | 8-PowerUDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 4.5V, 10V | 27mOhm @ 7A, 10V | Surface Mount | 2.5V @ 1mA | 7.6 nC @ 10 V | 60 V | ±20V | 460 pF @ 30 V | - | - | DFN2020-8S | - | 2W (Ta) | 150°C (TJ) |
|
RQ7L055BGTCRNCH 60V 5.5A, TSMT8, POWER MOSFE Rohm Semiconductor |
2,958 | - |
|
数据表 |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5.5A (Ta) | 4.5V, 10V | 29mOhm @ 5.5A, 10V | Surface Mount | 2.5V @ 1mA | 7.6 nC @ 10 V | 60 V | ±20V | 460 pF @ 30 V | - | - | TSMT8 | - | 1.1W (Ta) | 150°C (TJ) |
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RS3E075ATTB1PCH -30V -7.5A MIDDLE POWER MOSF Rohm Semiconductor |
2,336 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 7.5A (Ta) | 4.5V, 10V | 23.5mOhm @ 7.5A, 10V | Surface Mount | 2.5V @ 1mA | 25 nC @ 10 V | 30 V | ±20V | 1250 pF @ 15 V | - | - | 8-SOP | - | 2W (Ta) | 150°C (TJ) |
|
RSH070N05GZETBMOSFET N-CH 45V 7A 8SOP Rohm Semiconductor |
2,500 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | Surface Mount | 2.5V @ 1mA | 16.8 nC @ 5 V | 45 V | ±20V | 1000 pF @ 10 V | - | - | 8-SOP | - | 2W (Ta) | 150°C (TJ) |
|
R6004JNXC7GMOSFET N-CH 600V 4A TO220FM Rohm Semiconductor |
846 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | Through Hole | 7V @ 450µA | 10.5 nC @ 15 V | 600 V | ±30V | 260 pF @ 100 V | - | - | TO-220FM | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
R5009FNJTLMOSFET N-CH 500V 9A LPTS Rohm Semiconductor |
6,256 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 9A (Tc) | 10V | 840mOhm @ 4.5A, 10V | Surface Mount | 4V @ 1mA | 18 nC @ 10 V | 500 V | ±30V | 630 pF @ 25 V | - | - | LPTS | - | 50W (Tc) | 150°C (TJ) |
|
|
R6504KNXC7G650V 4A TO-220FM, HIGH-SPEED SWI Rohm Semiconductor |
995 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 4A (Ta) | 10V | 1.05Ohm @ 1.5A, 10V | Through Hole | 5V @ 130µA | 10 nC @ 10 V | 650 V | ±20V | 270 pF @ 25 V | - | - | TO-220FM | - | 40W (Tc) | 150°C (TJ) |
