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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SK3354-AZ

2SK3354-AZ

2SK3354-AZ - SWITCHING N-CHANNEL

Renesas

956 -
2SK3354-AZ

数据表

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 83A (Tc) 4V, 10V 8mOhm @ 42A, 10V Through Hole 2.5V @ 1mA 106 nC @ 10 V 60 V ±20V 6300 pF @ 10 V - - TO-220AB - 1.5W (Ta), 100W (Tc) 150°C
RQA0002DNSTB-E

RQA0002DNSTB-E

RQA0002DNS - N CHANNEL MOSFET

Renesas

9,270 -
RQA0002DNSTB-E

数据表

- 3-DFN Exposed Pad Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.8A (Ta) - - Surface Mount 750mV @ 1mA - 16 V ±5V 102 pF @ 0 V - - 2-HWSON (5x4) - 15W (Tc) 150°C
2SK3357-A

2SK3357-A

2SK3357 - N-CHANNEL POWER MOSFET

Renesas

294 -
2SK3357-A

数据表

- TO-3P-3, SC-65-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 75A (Ta) 4V, 10V 5.8mOhm @ 38A, 10V Through Hole 2.5V @ 1mA 170 nC @ 10 V 60 V ±20V 9800 pF @ 10 V - - TO-3P (MP-88) - 3W (Ta), 150W (Tc) 150°C
RJK6013DPP-E0#T2

RJK6013DPP-E0#T2

RJK6013DPP-E0#T2 - SILICON N CHA

Renesas

1,877 -
RJK6013DPP-E0#T2

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 700mOhm @ 5.5A, 10V Through Hole 4.5V @ 1mA 37.5 nC @ 10 V 600 V ±30V 1450 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C
NP88N075EUE-E2-AY

NP88N075EUE-E2-AY

NP88N075EUE - POWER MOSFETS FOR

Renesas

1,600 -
NP88N075EUE-E2-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 88A (Tc) 10V 8.5mOhm @ 44A, 10V Surface Mount 4V @ 250µA 230 nC @ 10 V 75 V ±20V 12300 pF @ 25 V - - TO-263-3 - 1.8W (Ta), 288W (Tc) 175°C
RJK5013DPP-E0#T2

RJK5013DPP-E0#T2

RJK5013DPP-E0#T2 - SILICON N CHA

Renesas

17,001 -
RJK5013DPP-E0#T2

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 465mOhm @ 7A, 10V Through Hole 4.5V @ 1mA 38 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C
RJK5013DPP-00#T2

RJK5013DPP-00#T2

RJK5013DPP - N CHANNEL MOSFET

Renesas

2,494 -
RJK5013DPP-00#T2

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 10V 465mOhm @ 7A, 10V Through Hole 4.5V @ 1mA 38 nC @ 10 V 500 V ±30V 1450 pF @ 25 V - - TO-220FN - 30W (Tc) 150°C
RJK5014DPP-E0#T2

RJK5014DPP-E0#T2

RJK5014DPP-E0#T2 - SILICON N CHA

Renesas

12,236 -
RJK5014DPP-E0#T2

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 10V 390mOhm @ 9.5A, 10V Through Hole 4.5V @ 1mA 46 nC @ 10 V 500 V ±30V 1800 pF @ 25 V - - TO-220FP - 35W (Tc) 150°C
NP110N055PUJ-E1B-AY

NP110N055PUJ-E1B-AY

NP110N055PUJ-E1B-AY - SWITCHINGN

Renesas

1,000 -
NP110N055PUJ-E1B-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 2.4mOhm @ 55A, 10V Surface Mount 4V @ 250µA 230 nC @ 10 V 55 V ±20V 14250 pF @ 25 V - - TO-263-3 - 1.8W (Ta), 288W (Tc) 175°C
RJL5014DPP-E0#T2

RJL5014DPP-E0#T2

RJL5014DPP-E0#T2 - SILICON N CHA

Renesas

2,240 -
RJL5014DPP-E0#T2

数据表

- TO-220-3 Full Pack Bulk Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 10V 400mOhm @ 9.5A, 10V Through Hole 4V @ 1mA 43 nC @ 10 V 500 V ±30V 1700 pF @ 25 V - - TO-220FP - 35W (Tc) 150°C
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