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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM900N10CP

TSM900N10CP

100V, 15A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,725 -
TSM900N10CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 90mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 9.3 nC @ 10 V 100 V ±20V 1480 pF @ 50 V - - TO-252 (DPAK) - 50W (Tc) -55°C ~ 150°C (TJ)
FQPF4N60

FQPF4N60

MOSFET N-CH 600V 2.6A TO220F

onsemi

4,532 -
FQPF4N60

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.6A (Tc) 10V 2.2Ohm @ 1.3A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 600 V ±30V 670 pF @ 25 V - - TO-220F-3 - 36W (Tc) -55°C ~ 150°C (TJ)
DI100N04D1

DI100N04D1

MOSFET DPAK N 40V 100A

Diotec Semiconductor

7,486 -
DI100N04D1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 143 nC @ 10 V 40 V ±20V 7000 pF @ 20 V - - TO-252 (DPAK) - 83.3W (Tc) -55°C ~ 175°C (TJ)
TSM10NC60CF C0G

TSM10NC60CF C0G

MOSFET N-CH 600V 10A ITO220S

Taiwan Semiconductor Corporation

5,834 -
TSM10NC60CF C0G

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 750mOhm @ 2.5A, 10V Through Hole 4.5V @ 250µA 33 nC @ 10 V 600 V ±30V 1652 pF @ 50 V - - ITO-220S - 45W (Tc) -55°C ~ 150°C (TJ)
AOTF780A70L

AOTF780A70L

N

Alpha & Omega Semiconductor Inc.

4,713 -
AOTF780A70L

数据表

aMOS5™ TO-220-3 Full Pack Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tj) 10V 780mOhm @ 1.4A, 10V Through Hole 4.1V @ 250µA 11.5 nC @ 10 V 700 V ±20V 675 pF @ 100 V - - TO-220F - 25W (Tc) -55°C ~ 150°C (TJ)
AOT780A70L

AOT780A70L

N

Alpha & Omega Semiconductor Inc.

4,062 -
AOT780A70L

数据表

aMOS5™ TO-220-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 780mOhm @ 1.4A, 10V Through Hole 4.1V @ 250µA 11.5 nC @ 10 V 700 V ±20V 675 pF @ 100 V - - TO-220 - 89W (Tc) -55°C ~ 150°C (TJ)
SIHD6N65ET1-GE3

SIHD6N65ET1-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix

4,171 -
SIHD6N65ET1-GE3

数据表

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3A, 10V Surface Mount 4V @ 250µA 48 nC @ 10 V 650 V ±30V 820 pF @ 100 V - - TO-252AA - 78W (Tc) -55°C ~ 150°C (TJ)
DMNH6042SPS-13

DMNH6042SPS-13

MOSFET N-CH 60V 24A PWRDI5060-8

Diodes Incorporated

1,185 -
DMNH6042SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 4.5V, 10V 50mOhm @ 5.1A, 10V Surface Mount 3V @ 250µA 8.8 nC @ 10 V 60 V ±20V 584 pF @ 25 V AEC-Q101 - PowerDI5060-8 Automotive 1.5W (Ta) -55°C ~ 175°C (TJ)
AONS67614

AONS67614

N

Alpha & Omega Semiconductor Inc.

6,668 -
AONS67614

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 34.5A (Ta), 85A (Tc) 4.5V, 10V 2.9mOhm @ 20A, 10V Surface Mount 2.4V @ 250µA 75 nC @ 10 V 60 V ±20V 3310 pF @ 30 V - - 8-DFN (5x6) - 6.2W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
IRF5800

IRF5800

MOSFET P-CH 30V 4A MICRO6

Infineon Technologies

2,830 -
IRF5800

数据表

HEXFET® SOT-23-6 Thin, TSOT-23-6 Tube Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 4.5V, 10V 85mOhm @ 4A, 10V Surface Mount 1V @ 250µA 17 nC @ 10 V 30 V ±20V 535 pF @ 25 V - - Micro6™(TSOP-6) - 2W (Ta) -55°C ~ 150°C (TJ)
PSMN8R0-40PS,127

PSMN8R0-40PS,127

MOSFET N-CH 40V 77A TO220AB

Nexperia USA Inc.

8,146 -
PSMN8R0-40PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 77A (Tc) 10V 7.6mOhm @ 25A, 10V Through Hole 4V @ 1mA 21 nC @ 10 V 40 V ±20V 1262 pF @ 12 V - - TO-220AB - 86W (Tc) -55°C ~ 175°C (TJ)
FDS7764A

FDS7764A

MOSFET N-CH 30V 15A 8SOIC

onsemi

6,239 -
FDS7764A

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta) - 7.5mOhm @ 15A, 4.5V Surface Mount 2V @ 250µA 40 nC @ 4.5 V 30 V - 3451 pF @ 15 V - - 8-SOIC - - -55°C ~ 150°C (TJ)
NVD5890NLT4G-VF01

NVD5890NLT4G-VF01

NFET DPAK 40V 123A 3.7MOH

onsemi

4,757 -
NVD5890NLT4G-VF01

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24A (Ta), 123A (Tc) 4.5V, 10V 3.7mOhm @ 50A, 10V Surface Mount 2.5V @ 250µA 84 nC @ 10 V 40 V ±20V 4760 pF @ 25 V AEC-Q101 - DPAK Automotive 4W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
DMTH6016LFVWQ-7

DMTH6016LFVWQ-7

MOSFET N-CH 60V 41A POWERDI3333

Diodes Incorporated

3,210 -
DMTH6016LFVWQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 15.1 nC @ 10 V 60 V ±20V 939 pF @ 30 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.17W (Ta) -55°C ~ 175°C (TJ)
PJW5P06A-AU_R2_000A1

PJW5P06A-AU_R2_000A1

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,997 -
PJW5P06A-AU_R2_000A1

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5A (Ta) 4.5V, 10V 68mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 60 V ±20V 879 pF @ 30 V AEC-Q101 - SOT-223 Automotive 3.1W (Ta) -55°C ~ 150°C (TJ)
RQ5L045BGTCL

RQ5L045BGTCL

NCH 60V 4.5A, TSMT3, POWER MOSFE

Rohm Semiconductor

2,975 -
RQ5L045BGTCL

数据表

- SC-96 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 4.5V, 10V 32mOhm @ 4.5A, 10V Surface Mount 2.5V @ 1mA 7.6 nC @ 10 V 60 V ±20V 460 pF @ 30 V - - TSMT3 - 700mW (Ta) 150°C (TJ)
DMN10H120SFG-13

DMN10H120SFG-13

MOSFET N-CH 100V 3.8A PWRDI3333

Diodes Incorporated

2,818 -
DMN10H120SFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.8A (Ta) 6V, 10V 110mOhm @ 3.3A, 10V Surface Mount 3V @ 250µA 10.6 nC @ 10 V 100 V ±20V 549 pF @ 50 V - - POWERDI3333-8 - 1W (Ta) -55°C ~ 150°C (TJ)
DMTH4014SPSWQ-13

DMTH4014SPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,400 -
DMTH4014SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 43.5A (Tc) 10V 14.8mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 10.6 nC @ 10 V 40 V ±20V 805 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 4W (Ta), 46.9W (Tc) -55°C ~ 175°C (TJ)
DMTH8028LPSWQ-13

DMTH8028LPSWQ-13

MOSFET BVDSS: 61V~100V POWERDI50

Diodes Incorporated

2,222 -
DMTH8028LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41.7A (Tc) 4.5V, 10V 25mOhm @ 5A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 10.4 nC @ 10 V 80 V ±20V 641 pF @ 25 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 3.9W (Ta), 65W (Tc) -55°C ~ 175°C (TJ)
DMTH6016LFVWQ-13

DMTH6016LFVWQ-13

MOSFET N-CH 60V 41A POWERDI3333

Diodes Incorporated

1,865 -
DMTH6016LFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 41A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 15.1 nC @ 10 V 60 V ±20V 939 pF @ 30 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.17W (Ta) -55°C ~ 175°C (TJ)
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