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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
UJ3C120070K4S1200V/70MOHM, N-OFF SIC CASCODE, Qorvo |
5,277 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 34.5A (Tc) | 12V | 90mOhm @ 20A, 12V | Through Hole | 6V @ 10mA | 46 nC @ 15 V | 1200 V | ±25V | 1500 pF @ 100 V | - | - | TO-247-4 | - | 254.2W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UJ4C075023L8SSR750V/23MO,SICFET,G4,TOLL Qorvo |
6,778 | - |
|
数据表 |
- | 8-PowerSFN | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 64A (Tj) | 12V | 29mOhm @ 40A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 750 V | ±20V | 1400 pF @ 400 V | - | - | TOLL | - | 278W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UJ4C075044L8SSB750V/44MO,SICFET,G4,TOLL Qorvo |
6,259 | - |
|
数据表 |
- | 8-PowerSFN | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 35.6A (Tj) | 12V | 56mOhm @ 25A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 750 V | ±20V | 1400 pF @ 400 V | - | - | TOLL | - | 181W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UF4SC120030B7S1200V/30MO,SICFET,G4,TO263-7 Qorvo |
8,354 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 56A (Tj) | 12V | 39mOhm @ 20A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 1200 V | ±20V | 1450 pF @ 800 V | - | - | D2PAK-7L | - | 341W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UF4C120070B7SSB1200V/70MO,SICFET,G4,TO263-7 Qorvo |
5,594 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 25.7A (Tj) | 12V | 91mOhm @ 20A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 1200 V | ±20V | 1370 pF @ 800 V | - | - | D2PAK-7L | - | 183W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UF4SC120030B7SSR1200V/30MO,SICFET,G4,TO263-7 Qorvo |
3,896 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 56A (Tj) | 12V | 39mOhm @ 20A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 1200 V | ±20V | 1450 pF @ 800 V | - | - | D2PAK-7L | - | 341W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UJ4C075033L8SSB750V/33MO,SICFET,G4,TOLL Qorvo |
7,114 | - |
|
数据表 |
- | 8-PowerSFN | Bulk | Active | P-Channel | SiCFET (Silicon Carbide) | 44A (Tj) | 12V | 41mOhm @ 230A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 750 V | ±20V | 1400 pF @ 400 V | - | - | TOLL | - | 205W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UF4SC120023B7S1200V/23MO,SICFET,G4,TO263-7 Qorvo |
6,159 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 72A (Tc) | 12V | 30mOhm @ 40A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 1200 V | ±20V | 1430 pF @ 800 V | - | - | D2PAK-7L | - | 385W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UJ4SC075010L8S750V/10MO,SICFET,G4,TOLL Qorvo |
3,583 | - |
|
数据表 |
- | 8-PowerSFN | Bulk | Active | N-Channel, Depletion Mode | SiCFET (Silicon Carbide) | 106A (Tc) | 12V | 14.2mOhm @ 60A, 12V | Surface Mount | 5.5V @ 10mA | 75 nC @ 15 V | 750 V | ±20V | 3245 pF @ 400 V | - | - | TOLL | - | 556W (Tc) | -55°C ~ 175°C (TJ) |
|
|
UJ4C075023L8SSB750V/23MO,SICFET,G4,TOLL Qorvo |
3,782 | - |
|
数据表 |
- | 8-PowerSFN | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 64A (Tj) | 12V | 29mOhm @ 40A, 12V | Surface Mount | 6V @ 10mA | 37.8 nC @ 15 V | 750 V | ±20V | 1400 pF @ 400 V | - | - | TOLL | - | 278W (Tc) | -55°C ~ 175°C (TJ) |
