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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJS6400_S1_00001

PJS6400_S1_00001

30V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,637 -
PJS6400_S1_00001

数据表

- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.4A (Ta) 2.5V, 10V 37mOhm @ 6.4A, 10V Surface Mount 1.3V @ 250µA 6 nC @ 10 V 30 V ±12V 490 pF @ 15 V - - SOT-23-6 - 2W (Ta) -55°C ~ 150°C (TJ)
PJD60R620E_L2_00001

PJD60R620E_L2_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

4,692 -
PJD60R620E_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 1.2A (Ta), 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 4V @ 250µA 21 nC @ 10 V 600 V ±20V 457 pF @ 25 V - - TO-252AA - 2W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
PJP8NA50_T0_00001

PJP8NA50_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

6,444 -
PJP8NA50_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 900mOhm @ 4A, 10V Through Hole 4V @ 250µA 16.2 nC @ 10 V 500 V ±30V 826 pF @ 25 V - - TO-220AB - 134W (Tc) -55°C ~ 150°C (TJ)
PJF6NA70_T0_00001

PJF6NA70_T0_00001

700V N-CHANNEL MOSFET

Panjit International Inc.

8,851 -
PJF6NA70_T0_00001

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 1.7Ohm @ 3A, 10V Through Hole 4V @ 250µA 16.5 nC @ 10 V 700 V ±30V 831 pF @ 25 V - - ITO-220AB - 45W (Tc) -55°C ~ 150°C (TJ)
PJP7NA65_T0_00001

PJP7NA65_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

6,923 -
PJP7NA65_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 1.5Ohm @ 3.5A, 10V Through Hole 4V @ 250µA 16.8 nC @ 10 V 650 V ±30V 754 pF @ 25 V - - TO-220AB - 145W (Tc) -55°C ~ 150°C (TJ)
PJP7NA60_T0_00001

PJP7NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

6,064 -
PJP7NA60_T0_00001

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 10V 1.2Ohm @ 3.5A, 10V Through Hole 4V @ 250µA 15.2 nC @ 10 V 600 V ±30V 723 pF @ 25 V - - TO-220AB - 145W (Tc) -55°C ~ 150°C (TJ)
PJMD990N65EC_L2_00001

PJMD990N65EC_L2_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

6,000 -
PJMD990N65EC_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 990mOhm @ 2A, 10V Surface Mount 4V @ 250µA 9.7 nC @ 10 V 650 V ±30V 306 pF @ 400 V - - TO-252AA - 47.5W (Tc) -55°C ~ 150°C (TJ)
PJMF360N60EC_T0_00001

PJMF360N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

2,000 -
PJMF360N60EC_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 18.7 nC @ 10 V 600 V ±30V 735 pF @ 400 V - - ITO-220AB-F - 30W (Tc) -55°C ~ 150°C (TJ)
PJMP130N65EC_T0_00001

PJMP130N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

2,000 -
PJMP130N65EC_T0_00001

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 130mOhm @ 10.8A, 10V Through Hole 4V @ 250µA 51 nC @ 10 V 650 V ±30V 1920 pF @ 400 V - - TO-220AB-L - 235W (Tc) -55°C ~ 150°C (TJ)
PJMD390N65EC_L2_00001

PJMD390N65EC_L2_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

5,940 -
PJMD390N65EC_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 390mOhm @ 5A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 650 V ±30V 726 pF @ 400 V - - TO-252AA - 87.5W (Tc) -55°C ~ 150°C (TJ)
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