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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJMP900N60EC_T0_00001

PJMP900N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

1,998 -
PJMP900N60EC_T0_00001

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 8.8 nC @ 10 V 600 V ±30V 310 pF @ 400 V - - TO-220AB-L - 47.5W (Tc) -55°C ~ 150°C (TJ)
PJP3NA50_T0_00001

PJP3NA50_T0_00001

500V N-CHANNEL MOSFET

Panjit International Inc.

2,372 -
PJP3NA50_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 6.5 nC @ 10 V 500 V ±30V 260 pF @ 25 V - - TO-220AB - 44W (Tc) -55°C ~ 150°C (TJ)
PJMF990N65EC_T0_00001

PJMF990N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

2,000 -
PJMF990N65EC_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 990mOhm @ 2A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 650 V ±30V 306 pF @ 400 V - - ITO-220AB-F - 22.5W (Tc) -55°C ~ 150°C (TJ)
PJMF210N65EC_T0_00601

PJMF210N65EC_T0_00601

650V/ 390MOHM / 10A/ EASY TO DRI

Panjit International Inc.

1,978 -
PJMF210N65EC_T0_00601

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 210mOhm @ 9.5A, 10V Through Hole 4V @ 250µA 34 nC @ 10 V 650 V ±30V 1412 pF @ 400 V - - ITO-220AB-F - 32W (Tc) -55°C ~ 150°C (TJ)
PJE8400_R1_00001

PJE8400_R1_00001

20V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,534 -
PJE8400_R1_00001

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.1A (Ta) 1.8V, 4.5V 88mOhm @ 1.1A, 4.5V Surface Mount 1.2V @ 250µA 4.6 nC @ 4.5 V 20 V ±12V 350 pF @ 10 V - - SOT-523 - 300mW (Ta) -55°C ~ 150°C (TJ)
PJE8472B_R1_00001

PJE8472B_R1_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,431 -
PJE8472B_R1_00001

数据表

- SOT-523 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200mA (Ta) 4.5V, 10V 3Ohm @ 600mA, 10V Surface Mount 2.5V @ 250µA 0.82 nC @ 4.5 V 60 V ±30V 34 pF @ 25 V - - SOT-523 - 300mW (Ta) -55°C ~ 150°C (TJ)
PJC7472B_R1_00001

PJC7472B_R1_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,553 -
PJC7472B_R1_00001

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250mA (Ta) 4.5V, 10V 3Ohm @ 600mA, 10V Surface Mount 2.5V @ 250µA 0.82 nC @ 4.5 V 60 V ±30V 34 pF @ 25 V - - SOT-323 - 350mW (Ta) -55°C ~ 150°C (TJ)
PJC7406_R1_00001

PJC7406_R1_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,476 -
PJC7406_R1_00001

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 1.8V, 4.5V 77mOhm @ 1.3A, 4.5V Surface Mount 1.2V @ 250µA 4.6 nC @ 4.5 V 20 V ±12V 350 pF @ 10 V - - SOT-323 - 350mW (Ta) -55°C ~ 150°C (TJ)
PJMP360N60EC_T0_00001

PJMP360N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

1,980 -
PJMP360N60EC_T0_00001

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 18.7 nC @ 10 V 600 V ±30V 735 pF @ 400 V - - TO-220AB-L - 87.5W (Tc) -55°C ~ 150°C (TJ)
PJP4NA65_T0_00001

PJP4NA65_T0_00001

650V N-CHANNEL MOSFET

Panjit International Inc.

3,451 -
PJP4NA65_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.7Ohm @ 2A, 10V Through Hole 4V @ 250µA 11.4 nC @ 10 V 650 V ±30V 463 pF @ 25 V - - TO-220AB - 100W (Tc) -55°C ~ 150°C (TJ)
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