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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJMD360N60EC_L2_00001

PJMD360N60EC_L2_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

5,985 -
PJMD360N60EC_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 360mOhm @ 5.5A, 10V Surface Mount 4V @ 250µA 18.7 nC @ 10 V 600 V ±30V 735 pF @ 400 V - - TO-252AA - 87.5W (Tc) -55°C ~ 150°C (TJ)
PJS6415A_S2_00001

PJS6415A_S2_00001

20V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,894 -
PJS6415A_S2_00001

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.2A (Ta) 1.8V, 4.5V 46mOhm @ 5.2A, 4.5V Surface Mount 1.3V @ 250µA 10 nC @ 4.5 V 20 V ±12V 980 pF @ 10 V - - SOT-23-6 - 2W (Ta) -55°C ~ 150°C (TJ)
PJA3460-AU_R1_000A1

PJA3460-AU_R1_000A1

SOT-23, MOSFET

Panjit International Inc.

6,788 -
PJA3460-AU_R1_000A1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 75mOhm @ 2A, 10V Surface Mount 2.5V @ 250µA 9.3 nC @ 10 V 60 V ±20V 509 pF @ 15 V AEC-Q101 - SOT-23 Automotive 1.25W (Ta) -55°C ~ 150°C (TJ)
PJP2NA90_T0_00001

PJP2NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.

9,334 -
PJP2NA90_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 6.4Ohm @ 1A, 10V Through Hole 4V @ 250µA 11.1 nC @ 10 V 900 V ±30V 396 pF @ 25 V - - TO-220AB - 80W (Tc) -55°C ~ 150°C (TJ)
PJP3NA80_T0_00001

PJP3NA80_T0_00001

800V N-CHANNEL MOSFET

Panjit International Inc.

9,204 -
PJP3NA80_T0_00001

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 4.8Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 800 V ±30V 406 pF @ 25 V - - TO-220AB - 106W (Tc) -55°C ~ 150°C (TJ)
PJF60R980E_T0_00001

PJF60R980E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

2,172 -
PJF60R980E_T0_00001

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 980mOhm @ 1.5A, 10V Through Hole 4V @ 250µA 14.4 nC @ 10 V 600 V ±20V 300 pF @ 25 V - - ITO-220AB - 40W (Tc) -55°C ~ 150°C (TJ)
PJP60R980E_T0_00001

PJP60R980E_T0_00001

600V N-CHANNEL SUPER JUNCTION MO

Panjit International Inc.

4,404 -
PJP60R980E_T0_00001

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 980mOhm @ 1.5A, 10V Through Hole 4V @ 250µA 14.4 nC @ 10 V 600 V ±20V 300 pF @ 25 V - - TO-220AB - 58W (Tc) -55°C ~ 150°C (TJ)
PJMH120N60EC_T0_00601

PJMH120N60EC_T0_00601

600V/ 120MOHM / 30A/ EASY TO DRI

Panjit International Inc.

1,800 -
PJMH120N60EC_T0_00601

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 120mOhm @ 12A, 10V Through Hole 4V @ 250µA 51 nC @ 10 V 600 V ±30V 1960 pF @ 400 V - - TO-247AD - 235W (Tc) -55°C ~ 150°C (TJ)
PJS6401_S1_00001

PJS6401_S1_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,107 -
PJS6401_S1_00001

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.6A (Ta) 2.5V, 10V 71mOhm @ 4.6A, 10V Surface Mount 1.3V @ 250µA 15.5 nC @ 10 V 30 V ±12V 637 pF @ 15 V - - SOT-23-6 - 2W (Ta) -55°C ~ 150°C (TJ)
PJS6414_S1_00001

PJS6414_S1_00001

20V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

4,792 -
PJS6414_S1_00001

数据表

- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.6A (Ta) 1.8V, 4.5V 36mOhm @ 6.6A, 4.5V Surface Mount 1.2V @ 250µA 4.1 nC @ 4.5 V 20 V ±12V 400 pF @ 10 V - - SOT-23-6 - 2W (Ta) -55°C ~ 150°C (TJ)
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