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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJMF390N65EC_T0_00001

PJMF390N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

1,785 -
PJMF390N65EC_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 390mOhm @ 5A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 650 V ±30V 726 pF @ 400 V - - ITO-220AB-F - 29.5W (Tc) -55°C ~ 150°C (TJ)
PJMF900N60EC_T0_00001

PJMF900N60EC_T0_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

1,986 -
PJMF900N60EC_T0_00001

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.3A, 10V Through Hole 4V @ 250µA 8.8 nC @ 10 V 600 V ±30V 310 pF @ 400 V - - ITO-220AB-F - 22.5W (Tc) -55°C ~ 150°C (TJ)
PJP6NA40_T0_00001

PJP6NA40_T0_00001

400V N-CHANNEL MOSFET

Panjit International Inc.

5,358 -
PJP6NA40_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 950mOhm @ 3A, 10V Through Hole 4V @ 250µA 11.4 nC @ 10 V 400 V ±30V 553 pF @ 25 V - - TO-220AB - 100W (Tc) -55°C ~ 150°C (TJ)
PJP4NA60_T0_00001

PJP4NA60_T0_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

7,234 -
PJP4NA60_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 10V 2.4Ohm @ 2A, 10V Through Hole 4V @ 250µA 11.1 nC @ 10 V 600 V ±30V 450 pF @ 25 V - - TO-220AB - 100W (Tc) -55°C ~ 150°C (TJ)
PJP6NA90_T0_00001

PJP6NA90_T0_00001

900V N-CHANNEL MOSFET

Panjit International Inc.

8,995 -
PJP6NA90_T0_00001

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Ta) 10V 2.3Ohm @ 3A, 10V Through Hole 4V @ 250µA 23.6 nC @ 10 V 900 V ±30V 915 pF @ 25 V - - TO-220AB - 167W (Tc) -55°C ~ 150°C (TJ)
PJP100P03_T0_00001

PJP100P03_T0_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,758 -
PJP100P03_T0_00001

数据表

- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 15.8A (Ta), 100A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V Through Hole 2.5V @ 250µA 107 nC @ 10 V 30 V ±20V 6067 pF @ 25 V - - TO-220AB - 2W (Ta), 119W (Tc) -55°C ~ 150°C (TJ)
PJQ1906_R1_00001

PJQ1906_R1_00001

MOSFET N-CH 30V 300MA DFN-3L

Panjit International Inc.

2,174 -
PJQ1906_R1_00001

数据表

- 3-UFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) 1.2V, 4.5V 1.2Ohm @ 300mA, 4.5V Surface Mount 1V @ 250µA 0.9 nC @ 4.5 V 30 V ±10V 45 pF @ 10 V - - 3-DFN (1x0.6) - 700mW (Ta) -55°C ~ 150°C (TJ)
PJX8856_R1_00001

PJX8856_R1_00001

MOSFET N-CH 20V SOT-563

Panjit International Inc.

5,589 -
PJX8856_R1_00001

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PJA3436_R2_00001

PJA3436_R2_00001

MOSFET N-CH 20V 1.2A SOT-23

Panjit International Inc.

3,424 -
PJA3436_R2_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.2A (Ta) 1.8V, 4.5V 380mOhm @ 1.2A, 4.5V Surface Mount 1V @ 250µA 0.9 nC @ 4.5 V 20 V ±12V 39 pF @ 10 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
PJZ9NA90_T0_10001

PJZ9NA90_T0_10001

MOSFET

Panjit International Inc.

9,136 -
PJZ9NA90_T0_10001

数据表

- TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 10V 1.4Ohm @ 4.5A, 10V Through Hole 4V @ 250µA 31 nC @ 10 V 900 V ±30V 1634 pF @ 25 V - - TO-3PL - 240W (Tc) -55°C ~ 150°C (TJ)
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