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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PJQ4465AP_R2_0000160V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,016 | - |
|
数据表 |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 5A (Ta), 16A (Tc) | 4.5V, 10V | 48mOhm @ 5A, 10V | Surface Mount | 2.5V @ 250µA | 22 nC @ 10 V | 60 V | ±20V | 1256 pF @ 30 V | - | - | DFN3333-8 | - | 2W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) |
|
PJD60N04S-AU_L2_002A140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,840 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 22.5A (Ta), 140A (Tc) | 4.5V, 10V | 3.3mOhm @ 20A, 10V | Surface Mount | 2.3V @ 50µA | 41 nC @ 10 V | 40 V | ±20V | 2862 pF @ 25 V | AEC-Q101 | - | TO-252AA | Automotive | 3W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) |
|
|
PSMP032N08NS1_T0_0060180V/ 3.4MOHM / TJMAX 175C MV MOS Panjit International Inc. |
1,966 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 166A (Tc) | 7V, 10V | 3.4mOhm @ 50A, 10V | Through Hole | 3.75V @ 250µA | 76 nC @ 7 V | 80 V | ±20V | 7430 pF @ 40 V | - | - | TO-220AB-L | - | 156W (Tc) | -55°C ~ 175°C (TJ) |
|
PJD25N04-AU_L2_000A140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
6,673 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 5.9A (Ta), 21A (Tc) | 4.5V, 10V | 32mOhm @ 12A, 10V | Surface Mount | 2.5V @ 250µA | 4.4 nC @ 4.5 V | 40 V | ±20V | 425 pF @ 25 V | AEC-Q101 | - | TO-252AA | Automotive | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) |
|
|
PSMB050N10NS2_R2_00601100V/ 5MOHM/ LOW FOM MOSFET Panjit International Inc. |
642 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tj) | 6V, 10V | 5mOhm @ 50A, 10V | Surface Mount | 3.8V @ 270µA | 53 nC @ 10 V | 100 V | ±20V | 3910 pF @ 50 V | - | - | TO-263 | - | 138W (Tc) | -55°C ~ 150°C (TJ) |
|
|
PJD55N04V-AU_L2_002A140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 21.5A (Ta), 128A (Tc) | 7V, 10V | 3.6mOhm @ 20A, 10V | Surface Mount | 3.5V @ 50µA | 34 nC @ 10 V | 40 V | ±20V | 2540 pF @ 25 V | AEC-Q101 | - | TO-252AA | Automotive | 3W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) |
|
|
PSMP050N10NS2_T0_00601100V/ 5MOHM/ LOW FOM MOSFET Panjit International Inc. |
1,827 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 6V, 10V | 5mOhm @ 50A, 10V | Through Hole | 3.8V @ 270µA | 53 nC @ 10 V | 100 V | ±20V | 3910 pF @ 50 V | - | - | TO-220AB-L | - | 138W (Tc) | -55°C ~ 150°C (TJ) |
|
|
PJD100N06SA-AU_L2_006A160V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,000 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PJD50N15S-AU_L2_006A1150V N-CHANNEL ENHANCEMENT MODE Panjit International Inc. |
3,000 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PJQ5560A-AU_R2_002A160V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,490 | - |
|
数据表 |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
