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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI5475DC-T1-GE3

SI5475DC-T1-GE3

MOSFET P-CH 12V 5.5A 1206-8

Vishay Siliconix

6,215 -
SI5475DC-T1-GE3

数据表

TrenchFET® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.5A (Ta) 1.8V, 4.5V 31mOhm @ 5.5A, 4.5V Surface Mount 450mV @ 1mA (Min) 29 nC @ 4.5 V 12 V ±8V - - - 1206-8 ChipFET™ - 1.3W (Ta) -55°C ~ 150°C (TJ)
SIHFR430ATRR-GE3

SIHFR430ATRR-GE3

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix

2,305 -
SIHFR430ATRR-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.7Ohm @ 3A, 10V Surface Mount 4.5V @ 250µA 24 nC @ 10 V 500 V ±30V 490 pF @ 25 V - - TO-252AA - 110W (Tc) -55°C ~ 150°C (TJ)
SIHFR430ATRL-GE3

SIHFR430ATRL-GE3

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix

6,878 -
SIHFR430ATRL-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.7Ohm @ 3A, 10V Surface Mount 4.5V @ 250µA 24 nC @ 10 V 500 V ±30V 490 pF @ 25 V - - TO-252AA - 110W (Tc) -55°C ~ 150°C (TJ)
NTMFS5C456NLT3G

NTMFS5C456NLT3G

MOSFET N-CH 40V 5DFN

onsemi

9,475 -
NTMFS5C456NLT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 87A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V Surface Mount 2V @ 250µA 18 nC @ 10 V 40 V ±20V 1600 pF @ 25 V - - 5-DFN (5x6) (8-SOFL) - 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
DMT6009LJ3

DMT6009LJ3

MOSFET N-CH 60V 74.5A TO251

Diodes Incorporated

8,743 -
DMT6009LJ3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 74.5A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V Through Hole 2V @ 250µA 33.5 nC @ 10 V 60 V ±16V 1925 pF @ 30 V - - TO-251 (Type TH) - 2.9W (Ta), 83.3W (Tc) -55°C ~ 150°C (TJ)
FQD2N50TF

FQD2N50TF

MOSFET N-CH 500V 1.6A DPAK

onsemi

5,290 -
FQD2N50TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 5.3Ohm @ 800mA, 10V Surface Mount 5V @ 250µA 8 nC @ 10 V 500 V ±30V 230 pF @ 25 V - - TO-252AA - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
DMT8012LPS-13

DMT8012LPS-13

MOSFET N-CH 80V 9A/65A PWRDI5060

Diodes Incorporated

6,223 -
DMT8012LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta), 65A (Tc) 4.5V, 10V 17mOhm @ 12A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 80 V ±20V 1949 pF @ 40 V - - PowerDI5060-8 - 2.1W (Ta), 113W (Tc) -55°C ~ 150°C (TJ)
FQP4N20

FQP4N20

MOSFET N-CH 200V 3.6A TO220-3

onsemi

5,242 -
FQP4N20

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V Through Hole 5V @ 250µA 6.5 nC @ 10 V 200 V ±30V 220 pF @ 25 V - - TO-220-3 - 45W (Tc) -55°C ~ 150°C (TJ)
DMN7022LFGQ-7

DMN7022LFGQ-7

MOSFET N-CH 75V 23A POWERDI3333

Diodes Incorporated

5,545 -
DMN7022LFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 23A (Tc) 4.5V, 10V 22mOhm @ 7.2A, 10V Surface Mount 3V @ 250µA 56.5 nC @ 10 V 75 V ±20V 2737 pF @ 35 V - - PowerDI3333-8 - 2W (Ta) -55°C ~ 150°C (TJ)
DMT10H015SK3-13

DMT10H015SK3-13

MOSFET N-CH 100V 54A TO252

Diodes Incorporated

9,998 -
DMT10H015SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 54A (Tc) 6V, 10V 14mOhm @ 20A, 10V Surface Mount 4V @ 250µA 30.1 nC @ 10 V 100 V ±20V 2343 pF @ 50 V - - TO-252 (DPAK) - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ)
MCACL2D4N06YL-TP

MCACL2D4N06YL-TP

N-CHANNEL MOSFET,DFN5060

Micro Commercial Co

7,356 -
MCACL2D4N06YL-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 4.5V, 10V 2.4mOhm @ 60A, 10V Surface Mount 2.5V @ 250µA 51.6 nC @ 10 V 60 V ±20V 2763 pF @ 30 V - - DFN5060 - 283W (Tj) -55°C ~ 175°C (TJ)
CPC3703C

CPC3703C

MOSFET N-CH 250V 360MA SOT89-3

IXYS Integrated Circuits Division

4,787 -
CPC3703C

数据表

- TO-243AA Tube Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 360mA (Ta) 0V 4Ohm @ 200mA, 0V Surface Mount - - 250 V ±15V 350 pF @ 25 V - - SOT-89-3 - 1.6W (Ta) -55°C ~ 125°C (TJ)
FKI06075

FKI06075

MOSFET N-CH 60V 52A TO220F

Sanken Electric USA Inc.

7,867 -
FKI06075

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 52A (Tc) 4.5V, 10V 6.3mOhm @ 39A, 10V Through Hole 2.5V @ 1mA 53.6 nC @ 10 V 60 V ±20V 3810 pF @ 25 V - - TO-220F - 40W (Tc) -55°C ~ 150°C (TJ)
AOI7N60

AOI7N60

MOSFET N-CH 600V 7A TO251A

Alpha & Omega Semiconductor Inc.

6,973 -
AOI7N60

数据表

- TO-251-3 Stub Leads, IPAK Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.3Ohm @ 3.5A, 10V Through Hole 4.5V @ 250µA 24 nC @ 10 V 600 V ±30V 1170 pF @ 25 V - - TO-251A - 178W (Tc) -50°C ~ 150°C (TJ)
IRF512

IRF512

N-CHANNEL POWER MOSFET

Harris Corporation

5,823 -
IRF512

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 4.9A (Tc) 10V 740mOhm @ 3.4A, 10V Through Hole 4V @ 250µA 7.7 nC @ 10 V 100 V ±20V 135 pF @ 25 V - - TO-220 - 43W (Tc) -55°C ~ 175°C (TJ)
BSP129L6327

BSP129L6327

N-CHANNEL POWER MOSFET

Infineon Technologies

9,716 -
BSP129L6327

数据表

SIPMOS® TO-261-4, TO-261AA Bulk Active N-Channel, Depletion Mode MOSFET (Metal Oxide) 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V Surface Mount 1V @ 108µA 5.7 nC @ 5 V 240 V ±20V 108 pF @ 25 V - - PG-SOT223-4-21 - 1.8W (Ta) -55°C ~ 150°C (TJ)
PMN27XPE115

PMN27XPE115

SMALL SIGNAL FET

NXP USA Inc.

5,111 -
PMN27XPE115

数据表

- SC-74, SOT-457 Bulk Active P-Channel MOSFET (Metal Oxide) 4.4A (Ta) 2.5V, 4.5V 30mOhm @ 3A, 4.5V Surface Mount 1.25V @ 250µA 22.5 nC @ 4.5 V 20 V ±12V 1770 pF @ 10 V - - 6-TSOP - 530mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ)
PMN40UPEA115

PMN40UPEA115

P-CHANNEL MOSFET

NXP USA Inc.

2,407 -
PMN40UPEA115

数据表

- SC-74, SOT-457 Bulk Active P-Channel MOSFET (Metal Oxide) 4.7A (Ta) 1.8V, 4.5V 43mOhm @ 3A, 4.5V Surface Mount 950mV @ 250µA 23 nC @ 4.5 V 20 V ±8V 1820 pF @ 10 V - - 6-TSOP - 500mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ)
PMV65XPEA215

PMV65XPEA215

P-CHANNEL MOSFET

NXP USA Inc.

2,701 -
PMV65XPEA215

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 2.8A (Ta) 2.5V, 4.5V 78mOhm @ 2.8A, 4.5V Surface Mount 1.25V @ 250µA 9 nC @ 4.5 V 20 V ±12V 618 pF @ 10 V AEC-Q101 - TO-236AB Automotive 480mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
PMV50XP215

PMV50XP215

P-CHANNEL MOSFET

NXP USA Inc.

4,287 -
PMV50XP215

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 3.6A (Ta) 1.5V, 4.5V 60mOhm @ 3.6A, 4.5V Surface Mount 900mV @ 250µA 12 nC @ 4.5 V 20 V ±12V 744 pF @ 20 V - - TO-236AB - 490mW (Ta), 4.63W (Tc) -55°C ~ 150°C (TJ)
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