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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RP1E090XNTCR

RP1E090XNTCR

MOSFET N-CH 30V 9A MPT6

Rohm Semiconductor

9,967 -
RP1E090XNTCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 4V, 10V 17mOhm @ 9A, 10V Surface Mount 2.5V @ 1mA 6.8 nC @ 5 V 30 V ±20V 440 pF @ 10 V - - MPT6 - 2W (Ta) 150°C (TJ)
IPD64CN10N G

IPD64CN10N G

MOSFET N-CH 100V 17A TO252-3

Infineon Technologies

3,552 -
IPD64CN10N G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17A (Tc) 10V 64mOhm @ 17A, 10V Surface Mount 4V @ 20µA 9 nC @ 10 V 100 V ±20V 569 pF @ 50 V - - PG-TO252-3 - 44W (Tc) -55°C ~ 175°C (TJ)
DMT32M4LFG-7

DMT32M4LFG-7

MOSFET BVDSS: 25V~30V POWERDI333

Diodes Incorporated

9,859 -
DMT32M4LFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 100A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 67 nC @ 10 V 30 V ±20V 4366 pF @ 15 V - - POWERDI3333-8 - 1.1W -55°C ~ 150°C (TJ)
FQD2N50TM

FQD2N50TM

MOSFET N-CH 500V 1.6A DPAK

onsemi

4,638 -
FQD2N50TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 5.3Ohm @ 800mA, 10V Surface Mount 5V @ 250µA 8 nC @ 10 V 500 V ±30V 230 pF @ 25 V - - TO-252AA - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ)
IPS60R600PFD7SAKMA1

IPS60R600PFD7SAKMA1

MOSFET N-CH 650V 6A TO251-3

Infineon Technologies

7,614 -
IPS60R600PFD7SAKMA1

数据表

CoolMOS™PFD7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 600mOhm @ 1.7A, 10V Through Hole 4.5V @ 80µA 8.5 nC @ 10 V 650 V ±20V 344 pF @ 400 V - - PG-TO251-3 - 31W (Tc) -40°C ~ 150°C (TJ)
SPD02N50C3

SPD02N50C3

MOSFET N-CH 560V 1.8A TO252-3

Infineon Technologies

6,158 -
SPD02N50C3

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Tc) 10V 3Ohm @ 1.1A, 10V Surface Mount 3.9V @ 80µA 9 nC @ 10 V 560 V ±20V 190 pF @ 25 V - - PG-TO252-3-11 - 25W (Tc) -55°C ~ 150°C (TJ)
XP4NA2R2HCST

XP4NA2R2HCST

MOSFET N CH 40V 36.5A SPPAK5X6

YAGEO XSEMI

5,946 -
XP4NA2R2HCST

数据表

AP4NA2R2HC SC-100, SOT-669 Tube Active N-Channel MOSFET (Metal Oxide) 36.5A (Ta), 100A (Tc) 10V 2.28mOhm @ 40A, 10V Surface Mount 4V @ 250µA 80 nC @ 10 V 40 V ±20V 4000 pF @ 30 V - - SPPAK 5X6 - 5W (Ta), 96.1W (Tc) -55°C ~ 150°C (TJ)
DIJ4A5N65

DIJ4A5N65

MOSFET ITO-220AB N 650V 4.5A

Diotec Semiconductor

9,258 -
DIJ4A5N65

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 1.3Ohm @ 3.5A, 10V Through Hole 4V @ 250µA 22 nC @ 10 V 650 V ±30V 1080 pF @ 25 V - - ITO-220F - 46W (Tc) -55°C ~ 150°C (TJ)
DMTH42M5LPSW-13

DMTH42M5LPSW-13

LINEAR IC

Diodes Incorporated

2,454 -
DMTH42M5LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 142A (Tc) 4.5V, 10V 2.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 32 nC @ 10 V 40 V ±20V 2246 pF @ 20 V - - PowerDI5060-8 (Type UX) - 3.72W (Ta), 89.8W (Tc) -55°C ~ 175°C (TJ)
DMPH4023SK3Q-13

DMPH4023SK3Q-13

MOSFET P-CH 40V 50A TO252 T&R

Diodes Incorporated

6,494 -
DMPH4023SK3Q-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 26mOhm @ 10A, 10V Surface Mount 3V @ 250µA 18.7 nC @ 10 V 40 V ±20V 1091 pF @ 20 V AEC-Q101 - TO-252 (DPAK) Automotive 2.1W (Ta) -55°C ~ 175°C (TJ)
DMT6013LFDF-7

DMT6013LFDF-7

MOSFET N-CH 60V 10A 6UDFN

Diodes Incorporated

7,111 -
DMT6013LFDF-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 15mOhm @ 8.5A, 10V Surface Mount 2.3V @ 250µA 15 nC @ 10 V 60 V ±20V 1081 pF @ 30 V - - U-DFN2020-6 (Type F) - 900mW (Ta) -55°C ~ 150°C (TJ)
CPC3730C

CPC3730C

MOSFET N-CH 350V SOT89

IXYS Integrated Circuits Division

6,072 -
CPC3730C

数据表

- TO-243AA Tube Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) - 0V 35Ohm @ 140mA, 0V Surface Mount - - 350 V ±20V 200 pF @ 25 V - - SOT-89 - 1.6W (Ta) -55°C ~ 125°C (TJ)
SFP9634

SFP9634

MOSFET P-CH 250V 5A TO220-3

onsemi

7,029 -
SFP9634

数据表

- TO-220-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.3Ohm @ 2.5A, 10V Through Hole 4V @ 250µA 37 nC @ 10 V 250 V ±30V 975 pF @ 25 V - - TO-220-3 - 70W (Tc) -55°C ~ 150°C (TJ)
IRFR3711ZTRRPBF

IRFR3711ZTRRPBF

MOSFET N-CH 20V 93A DPAK

Infineon Technologies

6,928 -
IRFR3711ZTRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 93A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V Surface Mount 2.45V @ 250µA 27 nC @ 4.5 V 20 V ±20V 2160 pF @ 10 V - - TO-252AA (DPAK) - 79W (Tc) -55°C ~ 175°C (TJ)
NVMFS5C468NLAFT3G

NVMFS5C468NLAFT3G

MOSFET N-CH 40V 13A/37A 5DFN

onsemi

3,554 -
NVMFS5C468NLAFT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 13A (Ta), 37A (Tc) 4.5V, 10V 10.3mOhm @ 20A, 10V Surface Mount 2V @ 250µA 7.3 nC @ 10 V 40 V ±20V 570 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.5W (Ta), 28W (Tc) -55°C ~ 175°C (TJ)
ZVN4424GTC

ZVN4424GTC

MOSFET N-CH 240V 500MA SOT223

Diodes Incorporated

2,988 -
ZVN4424GTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 500mA (Ta) 2.5V, 10V 5.5Ohm @ 500mA, 10V Surface Mount 1.8V @ 1mA - 240 V ±40V 200 pF @ 25 V - - SOT-223-3 - 2.5W (Ta) -55°C ~ 150°C (TJ)
ZVP4424GTC

ZVP4424GTC

MOSFET P-CH 240V 480MA SOT223

Diodes Incorporated

2,279 -
ZVP4424GTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 480mA (Ta) 3.5V, 10V 9Ohm @ 200mA, 10V Surface Mount 2V @ 1mA - 240 V ±40V 200 pF @ 25 V - - SOT-223-3 - 2.5W (Ta) -55°C ~ 150°C (TJ)
R6530ENZC8

R6530ENZC8

MOSFET N-CH 650V 30A TO3

Rohm Semiconductor

8,815 -
R6530ENZC8

数据表

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 140mOhm @ 14.5A, 10V Through Hole 4V @ 960µA 90 nC @ 10 V 650 V ±20V 2100 pF @ 25 V - - TO-3PF - 86W (Tc) 150°C (TJ)
R6524ENZC8

R6524ENZC8

MOSFET N-CH 650V 24A TO3

Rohm Semiconductor

7,806 -
R6524ENZC8

数据表

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 185mOhm @ 11.3A, 10V Through Hole 4V @ 750µA 70 nC @ 10 V 650 V ±20V 1650 pF @ 25 V - - TO-3PF - 74W (Tc) 150°C (TJ)
R6015ANZFU7C8

R6015ANZFU7C8

MOSFET N-CH 600V 15A TO3

Rohm Semiconductor

2,585 -
R6015ANZFU7C8

数据表

- TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 300mOhm @ 7.5A, 10V Through Hole 4.15V @ 1mA 50 nC @ 10 V 600 V ±30V 1700 pF @ 25 V - - TO-3PF - 110W (Tc) 150°C (TJ)
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