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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SSR4N60BTF

SSR4N60BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

3,332 -
SSR4N60BTF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 2.5Ohm @ 1.4A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 600 V ±30V 920 pF @ 25 V - - TO-252 (DPAK) - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ)
BSS84AKW-B115

BSS84AKW-B115

MOSFET P-CH

NXP USA Inc.

9,798 -
BSS84AKW-B115

数据表

- SC-70, SOT-323 Bulk Active P-Channel MOSFET (Metal Oxide) 150mA (Ta) 5V, 10V 7.5Ohm @ 100mA, 10V Surface Mount 2.1V @ 250µA 0.35 nC @ 5 V 50 V ±20V 36 pF @ 25 V AEC-Q101 - SC-70 Automotive 260mW (Ta), 830mW (Tc) -55°C ~ 150°C (TJ)
SFS9Z14

SFS9Z14

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,997 -
SFS9Z14

数据表

- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 500mOhm @ 2.7A, 10V Through Hole 4V @ 250µA 11 nC @ 10 V 60 V ±30V 350 pF @ 25 V - - TO-220F - 24W (Tc) -55°C ~ 175°C (TJ)
RFM12P08

RFM12P08

P-CHANNEL POWER MOSFET

Harris Corporation

9,592 -
RFM12P08

数据表

- TO-204AA, TO-3 Bulk Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 300mOhm @ 6A, 10V Through Hole 4V @ 1mA - 80 V ±20V 1500 pF @ 25 V - - TO-3 - 100W (Tc) -55°C ~ 150°C (TJ)
PMZB600UNE315

PMZB600UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.

6,968 -
PMZB600UNE315

数据表

- SC-101, SOT-883 Bulk Active N-Channel MOSFET (Metal Oxide) 600mA (Ta) 1.2V, 4.5V 620mOhm @ 600mA, 4.5V Surface Mount 950mV @ 250µA 0.7 nC @ 4.5 V 20 V ±8V 21.3 pF @ 10 V - - DFN1006B-3 - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ)
PMZB200UNE315

PMZB200UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.

4,063 -
PMZB200UNE315

数据表

- SC-101, SOT-883 Bulk Active N-Channel MOSFET (Metal Oxide) 1.4A (Ta) 1.5V, 4.5V 250mOhm @ 1.4A, 4.5V Surface Mount 950mV @ 250µA 2.7 nC @ 4.5 V 30 V ±8V 89 pF @ 15 V - - DFN1006B-3 - 350mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
2SJ199-T2-AZ

2SJ199-T2-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

5,412 -
2SJ199-T2-AZ

数据表

- TO-243AA Bulk Active P-Channel MOSFET (Metal Oxide) 1A (Ta) 4V, 10V 2Ohm @ 500mA, 10V Surface Mount 3V @ 1mA - 100 V ±20V 220 pF @ 10 V - - SC-62 - 2W (Ta) 150°C
AONS66400

AONS66400

MOSFET N-CH 40V 5X6 DFN

Alpha & Omega Semiconductor Inc.

4,874 -
AONS66400

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
AONS66450

AONS66450

MOSFET N-CH 40V 5X6 DFN

Alpha & Omega Semiconductor Inc.

6,132 -
AONS66450

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IRFC3205B

IRFC3205B

MOSFET 55V 110A DIE

Infineon Technologies

6,038 -
IRFC3205B

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 110A - 8mOhm @ 110A, 10V Surface Mount - - 55 V - - - - Die - - -
IRFC3415B

IRFC3415B

MOSFET 150V 43A DIE

Infineon Technologies

9,797 -
IRFC3415B

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 43A 10V 42mOhm @ 43A, 10V Surface Mount - - 150 V - - - - Die - - -
IRF6217TRPBF-1

IRF6217TRPBF-1

MOSFET P-CH 150V 700MA 8SO

Infineon Technologies

4,871 -
IRF6217TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 700mA (Ta) 10V 2.4Ohm @ 420mA, 10V Surface Mount 5V @ 250µA 9 nC @ 10 V 150 V ±20V 150 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFC9130NB

IRFC9130NB

MOSFET 100V 14A DIE

Infineon Technologies

8,966 -
IRFC9130NB

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 14A 10V 200mOhm @ 14A, 10V Surface Mount - - 100 V - - - - Die - - -
IRFC7416B

IRFC7416B

MOSFET 30V 10A DIE

Infineon Technologies

4,217 -
IRFC7416B

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 10A 10V 20mOhm @ 10A, 10V Surface Mount - - 30 V - - - - Die - - -
IRLC024NB

IRLC024NB

MOSFET 55V 17A DIE

Infineon Technologies

8,186 -
IRLC024NB

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 17A 10V 65mOhm @ 17A, 10V Surface Mount - - 55 V - - - - Die - - -
IRFC240NB

IRFC240NB

MOSFET 200V DIE

Infineon Technologies

2,279 -
IRFC240NB

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) - - - Surface Mount - - 200 V - - - - Die - - -
IRFC9024NB

IRFC9024NB

MOSFET 55V 11A DIE

Infineon Technologies

8,839 -
IRFC9024NB

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 11A 10V 175mOhm @ 11A, 10V Surface Mount - - 55 V - - - - Die - - -
IRFC9034NB

IRFC9034NB

MOSFET 55V 19A DIE

Infineon Technologies

3,359 -
IRFC9034NB

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 19A 10V 100mOhm @ 19A, 10V Surface Mount - - 55 V - - - - Die - - -
IRFC120NB

IRFC120NB

MOSFET 100V 9.4A DIE

Infineon Technologies

4,280 -
IRFC120NB

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 9.4A - 210mOhm @ 9.4A, 10V Surface Mount - - 100 V - - - - Die - - -
IRFC130NB

IRFC130NB

MOSFET 100V 17A DIE

Infineon Technologies

9,321 -
IRFC130NB

数据表

HEXFET® Die Bulk Obsolete - MOSFET (Metal Oxide) 17A 10V 90mOhm @ 17A, 10V Surface Mount - - 100 V - - - - Die - - -
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