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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
AOWF296

AOWF296

MOSFET N-CH 100V 37A TO262F

Alpha & Omega Semiconductor Inc.

9,027 -
AOWF296

数据表

AlphaSGT™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 6V, 10V 9.7mOhm @ 20A, 10V Through Hole 3.4V @ 250µA 52 nC @ 10 V 100 V ±20V 2785 pF @ 50 V - - TO-262F - 26W (Tc) -55°C ~ 150°C (TJ)
IPP80N07S405AKSA1

IPP80N07S405AKSA1

MOSFET N-CH TO220-3

Infineon Technologies

7,435 -
IPP80N07S405AKSA1

数据表

- - Tube Active - - 80A (Tc) - - - - - - - - - - - - - -
IPI120N04S4-01M

IPI120N04S4-01M

MOSFET N-CH TO262-3

Infineon Technologies

8,094 -
IPI120N04S4-01M

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
IPS70N10S3L-12

IPS70N10S3L-12

MOSFET N-CH 1TO251-3

Infineon Technologies

8,167 -
IPS70N10S3L-12

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
ITD50N04S4L04ATMA1

ITD50N04S4L04ATMA1

MOSFET N-CH TO252-5

Infineon Technologies

6,551 -
ITD50N04S4L04ATMA1

数据表

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IPA60R120P7E8191XKSA1

IPA60R120P7E8191XKSA1

MOSFET N-CH 600V TO220FP-3

Infineon Technologies

6,256 -
IPA60R120P7E8191XKSA1

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
IPA60R125C6E8191XKSA1

IPA60R125C6E8191XKSA1

MOSFET N-CH TO220-3

Infineon Technologies

9,626 -
IPA60R125C6E8191XKSA1

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
IPC60R070C6UNSAWNX6SA1

IPC60R070C6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies

3,364 -
IPC60R070C6UNSAWNX6SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R160C6UNSAWNX6SA1

IPC60R160C6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies

9,944 -
IPC60R160C6UNSAWNX6SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R190E6UNSAWNX6SA1

IPC60R190E6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies

5,628 -
IPC60R190E6UNSAWNX6SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R190E6X7SA1

IPC60R190E6X7SA1

MOSFET N-CH

Infineon Technologies

4,307 -
IPC60R190E6X7SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R190P6X7SA1

IPC60R190P6X7SA1

MOSFET N-CH

Infineon Technologies

2,654 -
IPC60R190P6X7SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R280E6UNSAWNX6SA1

IPC60R280E6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies

6,349 -
IPC60R280E6UNSAWNX6SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R280E6X7SA1

IPC60R280E6X7SA1

MOSFET N-CH

Infineon Technologies

5,785 -
IPC60R280E6X7SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R380C6X7SA1

IPC60R380C6X7SA1

MOSFET N-CH

Infineon Technologies

7,876 -
IPC60R380C6X7SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R380E6UNSAWNX6SA1

IPC60R380E6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies

4,024 -
IPC60R380E6UNSAWNX6SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R380E6X7SA1

IPC60R380E6X7SA1

MOSFET N-CH

Infineon Technologies

2,496 -
IPC60R380E6X7SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IPC60R600E6UNSAWNX6SA1

IPC60R600E6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies

6,406 -
IPC60R600E6UNSAWNX6SA1

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
SPD04N60C3

SPD04N60C3

MOSFET N-CH 600V 4.5A TO252-3

Infineon Technologies

6,542 -
SPD04N60C3

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V Surface Mount 3.9V @ 200µA 25 nC @ 10 V 600 V ±20V 490 pF @ 25 V - - PG-TO252-3 - 50W (Tc) -55°C ~ 150°C (TJ)
SPD07N60C3

SPD07N60C3

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies

3,493 -
SPD07N60C3

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V Surface Mount 3.9V @ 350µA 27 nC @ 10 V 600 V ±20V 790 pF @ 25 V - - PG-TO252-3 - 83W (Tc) -55°C ~ 150°C (TJ)
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