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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPI90R800C3

IPI90R800C3

MOSFET N-CH 900V 6.9A TO262-3

Infineon Technologies

3,838 -
IPI90R800C3

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V Through Hole 3.5V @ 460µA 42 nC @ 10 V 900 V ±20V 1100 pF @ 100 V - - PG-TO262-3 - 104W (Tc) -55°C ~ 150°C (TJ)
IPP90R500C3

IPP90R500C3

MOSFET N-CH 900V 11A TO220-3

Infineon Technologies

6,715 -
IPP90R500C3

数据表

CoolMOS™ TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 500mOhm @ 6.6A, 10V Through Hole 3.5V @ 740µA 68 nC @ 10 V 900 V ±20V 1700 pF @ 100 V - - PG-TO220-3 - 156W (Tc) -55°C ~ 150°C (TJ)
SPI08N80C3

SPI08N80C3

MOSFET N-CH 800V 8A TO262-3

Infineon Technologies

4,058 -
SPI08N80C3

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 650mOhm @ 5.1A, 10V Through Hole 3.9V @ 470µA 60 nC @ 10 V 800 V ±20V 1100 pF @ 100 V - - PG-TO262-3 - 104W (Tc) -55°C ~ 150°C (TJ)
SPS03N60C3

SPS03N60C3

MOSFET N-CH 600V 3.2A TO251-3

Infineon Technologies

6,148 -
SPS03N60C3

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V Through Hole 3.9V @ 135µA 17 nC @ 10 V 600 V ±20V 400 pF @ 25 V - - PG-TO251-3-11 - 38W (Tc) -55°C ~ 150°C (TJ)
V30365-T1-GE3

V30365-T1-GE3

MOSFET N-CH SMD

Vishay Siliconix

8,564 -
V30365-T1-GE3

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
V30391-T1-E3

V30391-T1-E3

MOSFET N-CH SMD

Vishay Siliconix

6,379 -
V30391-T1-E3

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
V30406-T1-GE3

V30406-T1-GE3

MOSFET N-CH SMD

Vishay Siliconix

4,203 -
V30406-T1-GE3

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
2SK1829TE85LF

2SK1829TE85LF

MOSFET N-CH 20V 50MA SC70

Toshiba Semiconductor and Storage

4,612 -
2SK1829TE85LF

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50mA (Ta) 2.5V 40Ohm @ 10mA, 2.5V Surface Mount - - 20 V 10V 5.5 pF @ 3 V - - SC-70 - 100mW (Ta) 150°C (TJ)
XP233P1501TR-G

XP233P1501TR-G

MOSFET P-CH 30V 1.5A SOT23

Torex Semiconductor Ltd

9,800 -
XP233P1501TR-G

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.5A (Ta) 4.5V, 10V 190mOhm @ 1A, 10V Surface Mount 1.9V @ 250µA - 30 V ±20V 160 pF @ 10 V - - SOT-23 - 400mW (Ta) 150°C (TJ)
PJQ1906_R1_00201

PJQ1906_R1_00201

20V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,164 -
PJQ1906_R1_00201

数据表

- 3-UFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 300mA (Ta) 1.2V, 4.5V 1.2Ohm @ 300mA, 4.5V Surface Mount 1V @ 250µA 0.9 nC @ 4.5 V 30 V ±10V 45 pF @ 10 V - - DFN1006-3 - 700mW (Ta) -55°C ~ 150°C (TJ)
FQD6P25TM

FQD6P25TM

MOSFET P-CH 250V 4.7A DPAK

onsemi

6,421 -
FQD6P25TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 1.1Ohm @ 2.35A, 10V Surface Mount 5V @ 250µA 27 nC @ 10 V 250 V ±30V 780 pF @ 25 V - - TO-252AA - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ)
ZXMN10A08E6QTA

ZXMN10A08E6QTA

MOSFET BVDSS: 61V~100V SOT26 T&R

Diodes Incorporated

2,615 -
ZXMN10A08E6QTA

数据表

- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 6V, 10V 250mOhm @ 3.2A, 10V Surface Mount 4V @ 250µA 7.7 nC @ 10 V 100 V ±20V 405 pF @ 50 V AEC-Q101 - SOT-26 Automotive 1.1W (Ta) -55°C ~ 150°C (TJ)
FQP17N08

FQP17N08

MOSFET N-CH 80V 16.5A TO220-3

onsemi

7,812 -
FQP17N08

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16.5A (Tc) 10V 115mOhm @ 8.25A, 10V Through Hole 4V @ 250µA 15 nC @ 10 V 80 V ±25V 450 pF @ 25 V - - TO-220-3 - 65W (Tc) -55°C ~ 175°C (TJ)
SIHFR1N60ATR-GE3

SIHFR1N60ATR-GE3

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix

5,214 -
SIHFR1N60ATR-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 7Ohm @ 840mA, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 600 V ±30V 229 pF @ 25 V - - TO-252AA - 36W (Tc) -55°C ~ 150°C (TJ)
DI028P03PT

DI028P03PT

MOSFET POWERQFN 3X3 P -30V

Diotec Semiconductor

8,635 -
DI028P03PT

数据表

- 8-PowerVDFN Bulk Active P-Channel MOSFET (Metal Oxide) 28A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 30 nC @ 10 V 30 V ±20V 2060 pF @ 15 V - - 8-QFN (3x3) - 40W (Tc) -55°C ~ 150°C (TJ)
MCU80N05YHE3-TP

MCU80N05YHE3-TP

MOSFET

Micro Commercial Co

9,533 -
MCU80N05YHE3-TP

数据表

- - Tape & Reel (TR) Not For New Designs - - - - - - - - - - - - - - - - -
SQ7414AEN-T1_BE3

SQ7414AEN-T1_BE3

MOSFET N-CH 60V 5.6A PPAK 1212-8

Vishay Siliconix

3,762 -
SQ7414AEN-T1_BE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 26mOhm @ 5.7A, 10V Surface Mount 2.5V @ 250µA 24 nC @ 10 V 60 V ±20V 980 pF @ 30 V AEC-Q101 - PowerPAK® 1212-8 Automotive 62W (Tc) -55°C ~ 175°C (TJ)
MCU18P10YHE3-TP

MCU18P10YHE3-TP

Interface

Micro Commercial Co

4,210 -
MCU18P10YHE3-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 110mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 20.1 nC @ 10 V 100 V ±20V 1051 pF @ 50 V - - TO-252 (DPAK) - 72W -55°C ~ 150°C
ZXMN6A08GQTC

ZXMN6A08GQTC

MOSFET N-CH 60V 3.8A SOT223

Diodes Incorporated

7,766 -
ZXMN6A08GQTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.8A (Ta) 4.5V, 10V 80mOhm @ 4.8A, 10V Surface Mount 1V @ 250µA 5.8 nC @ 10 V 60 V ±20V 459 pF @ 40 V AEC-Q101 - SOT-223-3 Automotive 2W (Ta) -55°C ~ 150°C (TJ)
SIHFR420A-GE3

SIHFR420A-GE3

MOSFET N-CH 500V 3.3A DPAK

Vishay Siliconix

8,200 -
SIHFR420A-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.3A (Tc) 10V 3Ohm @ 1.5A, 10V Surface Mount 4.5V @ 250µA 17 nC @ 10 V 500 V ±30V 3400 pF @ 25 V - - TO-252AA - 83W (Tc) -55°C ~ 150°C (TJ)
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