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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJL9420_R2_00001

PJL9420_R2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

7,702 -
PJL9420_R2_00001

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 5.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 25 nC @ 4.5 V 40 V ±20V 1258 pF @ 25 V - - 8-SOP - 2.1W (Ta) -55°C ~ 150°C (TJ)
MCAC50P04HE3-TP

MCAC50P04HE3-TP

MOSFET P-CH 40 50A DFN5060

Micro Commercial Co

3,913 -
MCAC50P04HE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 13mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 75 nC @ 10 V 40 V ±20V 3302 pF @ 30 V AEC-Q101 - DFN5060 Automotive 96W (Tj) -55°C ~ 150°C (TJ)
ZXMN10B08E6QTA

ZXMN10B08E6QTA

MOSFET BVDSS: 61V~100V SOT26 T&R

Diodes Incorporated

2,456 -
ZXMN10B08E6QTA

数据表

- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.6A (Ta) 4.3V, 10V 230mOhm @ 1.6A, 10V Surface Mount 3V @ 250µA 9.2 nC @ 10 V 100 V ±20V 497 pF @ 50 V - - SOT-26 - 1.1W (Ta) -55°C ~ 150°C (TJ)
DMNH4011SPS-13

DMNH4011SPS-13

MOSFET N-CH 40V 13A PWRDI5060

Diodes Incorporated

6,545 -
DMNH4011SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 80A (Tc) 10V 10mOhm @ 20A, 10V Surface Mount 4V @ 250µA 25.5 nC @ 10 V 40 V ±20V 1405 pF @ 20 V AEC-Q101 - PowerDI5060-8 Automotive 1.5W (Ta), 100W (Tc) -55°C ~ 175°C (TJ)
DMNH6021SPSWQ-13

DMNH6021SPSWQ-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated

7,356 -
DMNH6021SPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 44A (Tc) 4.5V, 10V 23mOhm @ 12A, 10V Surface Mount, Wettable Flank 3V @ 250µA 20.1 nC @ 10 V 60 V ±20V 1132 pF @ 30 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 1.6W -55°C ~ 175°C (TJ)
DMT6006LK3-13

DMT6006LK3-13

MOSFET BVDSS: 41V~60V TO252 T&R

Diodes Incorporated

7,145 -
DMT6006LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 88A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 34.9 nC @ 10 V 60 V ±20V 2162 pF @ 30 V - - TO-252 (DPAK) - 3.1W (Ta), 89.3W (Tc) -55°C ~ 150°C (TJ)
IPD06P005NATMA1

IPD06P005NATMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies

3,659 -
IPD06P005NATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 250mOhm @ 6.5A, 10V Surface Mount 4V @ 270µA 10.6 nC @ 10 V 60 V ±20V 420 pF @ 30 V - - PG-TO252-3 - 28W (Tc) -55°C ~ 175°C (TJ)
GT52N10D5I

GT52N10D5I

N100V,65A,RD<8M@10V,VTH1.0V~2.5V

Goford Semiconductor

2,858 -
GT52N10D5I

数据表

- 8-PowerTDFN Obsolete N-Channel MOSFET (Metal Oxide) 65A (Tc) 4.5V, 10V 7.5mOhm @ 50A, 10V Surface Mount 2.5V @ 250µA 35 nC @ 10 V 100 V ±20V 2428 pF @ 50 V - - 8-DFN (4.9x5.75) - 79W (Tc) -55°C ~ 150°C (TJ)
IRF620

IRF620

MOSFET N-CH 200V 6A TO220AB

STMicroelectronics

9,313 -
IRF620

数据表

PowerMESH™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 800mOhm @ 3A, 10V Through Hole 4V @ 250µA 27 nC @ 10 V 200 V ±20V 350 pF @ 25 V - - TO-220 - 70W (Tc) -65°C ~ 150°C (TJ)
SI2302ADS-T1

SI2302ADS-T1

MOSFET N-CH 20V 2.1A SOT23-3

Vishay Siliconix

3,992 -
SI2302ADS-T1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Ta) 2.5V, 4.5V 60mOhm @ 3.6A, 4.5V Surface Mount 1.2V @ 50µA 10 nC @ 4.5 V 20 V ±8V 300 pF @ 10 V - - SOT-23-3 (TO-236) - 700mW (Ta) -55°C ~ 150°C (TJ)
SI1037X-T1-GE3

SI1037X-T1-GE3

MOSFET P-CH 20V 770MA SC89

Vishay Siliconix

6,022 -
SI1037X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 770mA (Ta) 1.8V, 4.5V 195mOhm @ 770mA, 4.5V Surface Mount 450mV @ 250µA (Min) 5.5 nC @ 4.5 V 20 V ±8V - - - SC-89 (SOT-563F) - 170mW (Ta) -55°C ~ 150°C (TJ)
FDMA0104

FDMA0104

MOSFET N-CH 20V 9.4A 6MICROFET

onsemi

8,133 -
FDMA0104

数据表

PowerTrench® 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.4A (Ta) - 14.5mOhm @ 9.4A, 4.5V Surface Mount 1V @ 250µA 17.5 nC @ 4.5 V 20 V - 1680 pF @ 10 V - - 6-MicroFET (2x2) - 1.9W (Ta) -55°C ~ 150°C (TJ)
V30408-T1-GE3

V30408-T1-GE3

MOSFET N-CH SMD

Vishay Siliconix

7,880 -
V30408-T1-GE3

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
V30410-T1-GE3

V30410-T1-GE3

MOSFET N-CH SMD

Vishay Siliconix

8,792 -
V30410-T1-GE3

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
V30429-T1-GE3

V30429-T1-GE3

MOSFET N-CH SMD

Vishay Siliconix

2,317 -
V30429-T1-GE3

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
V30432-T1-GE3

V30432-T1-GE3

MOSFET N-CH SMD

Vishay Siliconix

7,213 -
V30432-T1-GE3

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
PMPB100ENEAX

PMPB100ENEAX

PMPB100ENEA/SOT1220/SOT1220

Nexperia USA Inc.

3,111 -
PMPB100ENEAX

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active - - - - - Surface Mount - - - ±20V - - - DFN2020MD-6 - - -
PMPB25ENEAX

PMPB25ENEAX

MOSFET N-CH 30V 7.2A DFN2020MD-6

Nexperia USA Inc.

7,919 -
PMPB25ENEAX

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.2A (Ta) 4.5V, 10V 24mOhm @ 7.2A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 10 V 30 V ±20V 607 pF @ 15 V - - DFN2020MD-6 - 2.08W (Ta) -55°C ~ 175°C (TJ)
PSMN5R6-100YSFX

PSMN5R6-100YSFX

MOSFET N-CH 100V 158A LFPAK56

Nexperia USA Inc.

4,262 -
PSMN5R6-100YSFX

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V - Surface Mount - 63 nC @ 10 V 100 V ±20V - - - LFPAK56; Power-SO8 - 294W (Tc) 175°C (TJ)
APT130SM70B

APT130SM70B

SICFET N-CH 700V 110A TO247-3

Microsemi Corporation

3,554 -
APT130SM70B

数据表

- TO-247-3 Bulk Obsolete N-Channel SiCFET (Silicon Carbide) 110A (Tc) 20V 45mOhm @ 60A, 20V Through Hole 2.4V @ 1mA 220 nC @ 20 V 700 V +25V, -10V 3950 pF @ 700 V - - TO-247-3 - 556W (Tc) -55°C ~ 175°C (TJ)
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