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场效应晶体管(FETs)、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PJL9420_R2_0000140V N-CHANNEL ENHANCEMENT MODE M |
7,702 | - |
|
数据表 |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 14A (Ta) | 4.5V, 10V | 5.5mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 25 nC @ 4.5 V | 40 V | ±20V | 1258 pF @ 25 V | - | - | 8-SOP | - | 2.1W (Ta) | -55°C ~ 150°C (TJ) |
|
MCAC50P04HE3-TPMOSFET P-CH 40 50A DFN5060 |
3,913 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 13mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 75 nC @ 10 V | 40 V | ±20V | 3302 pF @ 30 V | AEC-Q101 | - | DFN5060 | Automotive | 96W (Tj) | -55°C ~ 150°C (TJ) |
|
ZXMN10B08E6QTAMOSFET BVDSS: 61V~100V SOT26 T&R |
2,456 | - |
|
数据表 |
- | SOT-23-6 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 1.6A (Ta) | 4.3V, 10V | 230mOhm @ 1.6A, 10V | Surface Mount | 3V @ 250µA | 9.2 nC @ 10 V | 100 V | ±20V | 497 pF @ 50 V | - | - | SOT-26 | - | 1.1W (Ta) | -55°C ~ 150°C (TJ) |
|
DMNH4011SPS-13MOSFET N-CH 40V 13A PWRDI5060 |
6,545 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Ta), 80A (Tc) | 10V | 10mOhm @ 20A, 10V | Surface Mount | 4V @ 250µA | 25.5 nC @ 10 V | 40 V | ±20V | 1405 pF @ 20 V | AEC-Q101 | - | PowerDI5060-8 | Automotive | 1.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) |
|
DMNH6021SPSWQ-13MOSFET BVDSS: 41V~60V POWERDI506 |
7,356 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | 4.5V, 10V | 23mOhm @ 12A, 10V | Surface Mount, Wettable Flank | 3V @ 250µA | 20.1 nC @ 10 V | 60 V | ±20V | 1132 pF @ 30 V | AEC-Q101 | - | PowerDI5060-8 (Type UX) | Automotive | 1.6W | -55°C ~ 175°C (TJ) |
|
DMT6006LK3-13MOSFET BVDSS: 41V~60V TO252 T&R |
7,145 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 88A (Tc) | 4.5V, 10V | 6.5mOhm @ 20A, 10V | Surface Mount | 2.5V @ 250µA | 34.9 nC @ 10 V | 60 V | ±20V | 2162 pF @ 30 V | - | - | TO-252 (DPAK) | - | 3.1W (Ta), 89.3W (Tc) | -55°C ~ 150°C (TJ) |
|
IPD06P005NATMA1MOSFET P-CH 60V 6.5A TO252-3 |
3,659 | - |
|
数据表 |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 250mOhm @ 6.5A, 10V | Surface Mount | 4V @ 270µA | 10.6 nC @ 10 V | 60 V | ±20V | 420 pF @ 30 V | - | - | PG-TO252-3 | - | 28W (Tc) | -55°C ~ 175°C (TJ) |
|
GT52N10D5IN100V,65A,RD<8M@10V,VTH1.0V~2.5V |
2,858 | - |
|
数据表 |
- | 8-PowerTDFN | Obsolete | N-Channel | MOSFET (Metal Oxide) | 65A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | Surface Mount | 2.5V @ 250µA | 35 nC @ 10 V | 100 V | ±20V | 2428 pF @ 50 V | - | - | 8-DFN (4.9x5.75) | - | 79W (Tc) | -55°C ~ 150°C (TJ) | |
|
|
IRF620MOSFET N-CH 200V 6A TO220AB |
9,313 | - |
|
数据表 |
PowerMESH™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 800mOhm @ 3A, 10V | Through Hole | 4V @ 250µA | 27 nC @ 10 V | 200 V | ±20V | 350 pF @ 25 V | - | - | TO-220 | - | 70W (Tc) | -65°C ~ 150°C (TJ) |
|
SI2302ADS-T1MOSFET N-CH 20V 2.1A SOT23-3 |
3,992 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.1A (Ta) | 2.5V, 4.5V | 60mOhm @ 3.6A, 4.5V | Surface Mount | 1.2V @ 50µA | 10 nC @ 4.5 V | 20 V | ±8V | 300 pF @ 10 V | - | - | SOT-23-3 (TO-236) | - | 700mW (Ta) | -55°C ~ 150°C (TJ) |
|
SI1037X-T1-GE3MOSFET P-CH 20V 770MA SC89 |
6,022 | - |
|
数据表 |
TrenchFET® | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 770mA (Ta) | 1.8V, 4.5V | 195mOhm @ 770mA, 4.5V | Surface Mount | 450mV @ 250µA (Min) | 5.5 nC @ 4.5 V | 20 V | ±8V | - | - | - | SC-89 (SOT-563F) | - | 170mW (Ta) | -55°C ~ 150°C (TJ) |
|
FDMA0104MOSFET N-CH 20V 9.4A 6MICROFET |
8,133 | - |
|
数据表 |
PowerTrench® | 6-WDFN Exposed Pad | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 9.4A (Ta) | - | 14.5mOhm @ 9.4A, 4.5V | Surface Mount | 1V @ 250µA | 17.5 nC @ 4.5 V | 20 V | - | 1680 pF @ 10 V | - | - | 6-MicroFET (2x2) | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) |
|
V30408-T1-GE3MOSFET N-CH SMD |
7,880 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
V30410-T1-GE3MOSFET N-CH SMD |
8,792 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
V30429-T1-GE3MOSFET N-CH SMD |
2,317 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
V30432-T1-GE3MOSFET N-CH SMD |
7,213 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PMPB100ENEAXPMPB100ENEA/SOT1220/SOT1220 |
3,111 | - |
|
数据表 |
- | 6-UDFN Exposed Pad | Tape & Reel (TR) | Active | - | - | - | - | - | Surface Mount | - | - | - | ±20V | - | - | - | DFN2020MD-6 | - | - | - |
|
PMPB25ENEAXMOSFET N-CH 30V 7.2A DFN2020MD-6 |
7,919 | - |
|
数据表 |
- | 6-UDFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 7.2A (Ta) | 4.5V, 10V | 24mOhm @ 7.2A, 10V | Surface Mount | 2.5V @ 250µA | 19 nC @ 10 V | 30 V | ±20V | 607 pF @ 15 V | - | - | DFN2020MD-6 | - | 2.08W (Ta) | -55°C ~ 175°C (TJ) |
|
PSMN5R6-100YSFXMOSFET N-CH 100V 158A LFPAK56 |
4,262 | - |
|
数据表 |
- | SOT-1023, 4-LFPAK | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 10V | - | Surface Mount | - | 63 nC @ 10 V | 100 V | ±20V | - | - | - | LFPAK56; Power-SO8 | - | 294W (Tc) | 175°C (TJ) |
|
APT130SM70BSICFET N-CH 700V 110A TO247-3 |
3,554 | - |
|
数据表 |
- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 110A (Tc) | 20V | 45mOhm @ 60A, 20V | Through Hole | 2.4V @ 1mA | 220 nC @ 20 V | 700 V | +25V, -10V | 3950 pF @ 700 V | - | - | TO-247-3 | - | 556W (Tc) | -55°C ~ 175°C (TJ) |
