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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SJ661-1EX

2SJ661-1EX

MOSFET P-CH I2PAK

onsemi

3,093 -
2SJ661-1EX

数据表

- - Tube Obsolete - - 38A (Tj) 4V, 10V - - - - - ±20V - - - - - - -
IRFH7184ATRPBF

IRFH7184ATRPBF

MOSFET N-CH 8-TDSON

Infineon Technologies

2,355 -
IRFH7184ATRPBF

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
IRFH7190ATRPBF

IRFH7190ATRPBF

MOSFET N-CH 8-TDSON

Infineon Technologies

8,495 -
IRFH7190ATRPBF

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
R6020KNZ1C9

R6020KNZ1C9

MOSFET N-CH 600V 20A TO247

Rohm Semiconductor

9,410 -
R6020KNZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 5V @ 1mA 40 nC @ 10 V 600 V ±20V 1550 pF @ 25 V - - TO-247 - 231W (Tc) -55°C ~ 150°C (TJ)
R6030KNZ1C9

R6030KNZ1C9

MOSFET N-CHANNEL 600V 30A TO247

Rohm Semiconductor

3,567 -
R6030KNZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 130mOhm @ 14.5A, 10V Through Hole 5V @ 1mA 56 nC @ 10 V 600 V ±20V 2350 pF @ 25 V - - TO-247 - 305W (Tc) -55°C ~ 150°C (TJ)
R6035KNZ1C9

R6035KNZ1C9

MOSFET N-CHANNEL 600V 35A TO247

Rohm Semiconductor

3,604 -
R6035KNZ1C9

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 102mOhm @ 18.1A, 10V Through Hole 5V @ 1mA 72 nC @ 10 V 600 V ±20V 3000 pF @ 25 V - - TO-247 - 379W (Tc) -55°C ~ 150°C (TJ)
94-2311PBF

94-2311PBF

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies

5,318 -
94-2311PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
BUK7Y25-60E/GFX

BUK7Y25-60E/GFX

MOSFET N-CH LFPAK

NXP USA Inc.

5,780 -
BUK7Y25-60E/GFX

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
BUK7Y25-80E/CX

BUK7Y25-80E/CX

MOSFET N-CH 80V 39A LFPAK56

NXP USA Inc.

2,947 -
BUK7Y25-80E/CX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 25mOhm @ 10A, 10V Surface Mount 4V @ 1mA 25.9 nC @ 10 V 80 V ±20V 1800 pF @ 25 V - - LFPAK56, Power-SO8 - 95W (Tc) -55°C ~ 175°C (TJ)
BUK7Y25-80E/GFX

BUK7Y25-80E/GFX

MOSFET N-CH 80V 39A LFPAK56

NXP USA Inc.

3,397 -
BUK7Y25-80E/GFX

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 39A (Tc) 10V 25mOhm @ 10A, 10V Surface Mount 4V @ 1mA 25.9 nC @ 10 V 80 V ±20V 1800 pF @ 25 V - - LFPAK56, Power-SO8 - 95W (Tc) -55°C ~ 175°C (TJ)
BUK9Y11-30B/C1,115

BUK9Y11-30B/C1,115

TRANS N-CH LFPAK

NXP USA Inc.

6,143 -
BUK9Y11-30B/C1,115

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
NTTFS4824NTWG

NTTFS4824NTWG

MOSFET N-CH 30V 8.3A/69A 8WDFN

onsemi

4,882 -
NTTFS4824NTWG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta), 69A (Tc) 4.5V, 11.5V 5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 29 nC @ 11.5 V 30 V ±20V 2363 pF @ 12 V - - 8-WDFN (3.3x3.3) - 660mW (Ta), 46.3W (Tc) -55°C ~ 150°C (TJ)
CA/JCOP/MF4K/4B-UZ

CA/JCOP/MF4K/4B-UZ

CA/JCOP/MF4K/4B-UZ

NXP USA Inc.

2,527 -
CA/JCOP/MF4K/4B-UZ

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
DMN10H170SFGQ-7

DMN10H170SFGQ-7

MOSFET N-CH 100V PWRDI3333

Diodes Incorporated

9,271 -
DMN10H170SFGQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.9A (Ta), 8.5A (Tc) 4.5V, 10V 122mOhm @ 3.3A, 10V Surface Mount 3V @ 250µA 14.9 nC @ 10 V 100 V ±20V 870.7 pF @ 25 V AEC-Q101 - POWERDI3333-8 Automotive 940mW (Ta) -55°C ~ 150°C (TJ)
NX2020P1X

NX2020P1X

NX2020P1X

NXP USA Inc.

8,203 -
NX2020P1X

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
NX7002AK.R

NX7002AK.R

NX7002AK.R

NXP USA Inc.

7,435 -
NX7002AK.R

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
ZVP2106AS

ZVP2106AS

MOSFET P-CH 60V 280MA TO92-3

Diodes Incorporated

5,707 -
ZVP2106AS

数据表

- TO-226-3, TO-92-3 (TO-226AA) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 280mA (Ta) 10V 5Ohm @ 500mA, 10V Through Hole 3.5V @ 1mA - 60 V ±20V 100 pF @ 18 V - - TO-92 - 700mW (Ta) -55°C ~ 150°C (TJ)
PMV48XP/ZLR

PMV48XP/ZLR

PMV48XP/ZLR

Nexperia USA Inc.

2,568 -
PMV48XP/ZLR

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 2.5V, 4.5V 55mOhm @ 2.4A, 4.5V Surface Mount 1.25V @ 250µA 11 nC @ 4.5 V 20 V ±12V 1000 pF @ 10 V - - TO-236AB - 510mW (Ta), 4.15W (Tc) 150°C (TJ)
PMZB290UN/FYL

PMZB290UN/FYL

PMZB290UN/FYL

NXP USA Inc.

4,536 -
PMZB290UN/FYL

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN0R9-25YLC/GFX

PSMN0R9-25YLC/GFX

PSMN0R9-25YLC/GFX

NXP USA Inc.

4,975 -
PSMN0R9-25YLC/GFX

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
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