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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TPH3208PS

TPH3208PS

GANFET N-CH 650V 20A TO220AB

Transphorm

5,167 -
TPH3208PS

数据表

- TO-220-3 Tube Obsolete N-Channel GaNFET (Cascode Gallium Nitride FET) 20A (Tc) 10V 130mOhm @ 13A, 8V Through Hole 2.6V @ 300µA 14 nC @ 8 V 650 V ±18V 760 pF @ 400 V - - TO-220AB - 96W (Tc) -55°C ~ 150°C (TJ)
TPH3208LD

TPH3208LD

GANFET N-CH 650V 20A 4PQFN

Transphorm

4,804 -
TPH3208LD

数据表

- 4-PowerDFN Tube Obsolete N-Channel GaNFET (Gallium Nitride) 20A (Tc) 10V 130mOhm @ 13A, 8V Surface Mount 2.6V @ 300µA 14 nC @ 8 V 650 V ±18V 760 pF @ 400 V - - 4-PQFN (8x8) - 96W (Tc) -55°C ~ 150°C (TJ)
TPH3207WS

TPH3207WS

GANFET N-CH 650V 50A TO247-3

Transphorm

6,522 -
TPH3207WS

数据表

- TO-247-3 Tube Obsolete N-Channel GaNFET (Gallium Nitride) 50A (Tc) 10V 41mOhm @ 32A, 8V Through Hole 2.65V @ 700µA 42 nC @ 8 V 650 V ±18V 2197 pF @ 400 V - - TO-247-3 - 178W (Tc) -55°C ~ 150°C (TJ)
TPH3202PD

TPH3202PD

GANFET N-CH 600V 9A TO220AB

Transphorm

8,196 -
TPH3202PD

数据表

- TO-220-3 Tube Obsolete N-Channel GaNFET (Gallium Nitride) 9A (Tc) 10V 350mOhm @ 5.5A, 8V Through Hole 2.5V @ 250µA 9.3 nC @ 4.5 V 600 V ±18V 760 pF @ 480 V - - TO-220AB - 65W (Tc) -55°C ~ 175°C (TJ)
TPH3202LS

TPH3202LS

GANFET N-CH 600V 9A 3PQFN

Transphorm

3,416 -
TPH3202LS

数据表

- 3-PowerDFN Tube Obsolete N-Channel GaNFET (Gallium Nitride) 9A (Tc) 10V 350mOhm @ 5.5A, 8V Surface Mount 2.5V @ 250µA 9.3 nC @ 4.5 V 600 V ±18V 760 pF @ 480 V - - 3-PQFN (8x8) - 65W (Tc) -55°C ~ 175°C (TJ)
TPH3208PD

TPH3208PD

GANFET N-CH 650V 20A TO220AB

Transphorm

6,493 -
TPH3208PD

数据表

- TO-220-3 Tube Obsolete N-Channel GaNFET (Gallium Nitride) 20A (Tc) 10V 130mOhm @ 13A, 8V Through Hole 2.6V @ 300µA 14 nC @ 8 V 650 V ±18V 760 pF @ 400 V - - TO-220AB - 96W (Tc) -55°C ~ 150°C
TPH3208LS

TPH3208LS

GANFET N-CH 650V 20A 3PQFN

Transphorm

4,216 -
TPH3208LS

数据表

- 3-PowerDFN Tube Obsolete N-Channel GaNFET (Gallium Nitride) 20A (Tc) 10V 130mOhm @ 13A, 8V Surface Mount 2.6V @ 300µA 14 nC @ 8 V 650 V ±18V 760 pF @ 400 V - - 3-PQFN (8x8) - 96W (Tc) -55°C ~ 150°C (TJ)
64-0055PBF

64-0055PBF

MOSFET N-CH 60V 160A TO220AB

Infineon Technologies

7,602 -
64-0055PBF

数据表

HEXFET® - Tube Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 4.2mOhm @ 75A, 10V Through Hole 4V @ 150µA 120 nC @ 10 V 60 V ±20V 4520 pF @ 50 V - - - - 230W (Tc) -55°C ~ 175°C (TJ)
TPH3205WSB

TPH3205WSB

GANFET N-CH 650V 36A TO247-3

Transphorm

7,363 -
TPH3205WSB

数据表

- TO-247-3 Tube Obsolete N-Channel GaNFET (Gallium Nitride) 36A (Tc) 10V 60mOhm @ 22A, 8V Through Hole 2.6V @ 700µA 42 nC @ 8 V 650 V ±18V 2200 pF @ 400 V - - TO-247-3 - 125W (Tc) -55°C ~ 175°C (TJ)
IRFC3004EB

IRFC3004EB

MOSFET N-CH WAFER

Infineon Technologies

4,010 -
IRFC3004EB

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRFC3205ZEB

IRFC3205ZEB

MOSFET N-CH WAFER

Infineon Technologies

3,961 -
IRFC3205ZEB

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRFC3206EB

IRFC3206EB

MOSFET N-CH WAFER

Infineon Technologies

5,778 -
IRFC3206EB

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRFC4020D

IRFC4020D

MOSFET N-CH WAFER

Infineon Technologies

7,004 -
IRFC4020D

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRFC4227EB

IRFC4227EB

MOSFET N-CH WAFER

Infineon Technologies

7,687 -
IRFC4227EB

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
IRFC4668D

IRFC4668D

MOSFET N-CH WAFER

Infineon Technologies

7,426 -
IRFC4668D

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
TPH3206LDGB

TPH3206LDGB

GANFET N-CH 650V 16A PQFN

Transphorm

4,066 -
TPH3206LDGB

数据表

- 3-PowerDFN Tube Obsolete N-Channel GaNFET (Gallium Nitride) 16A (Tc) 10V 180mOhm @ 11A, 8V Surface Mount 2.6V @ 500µA 9.3 nC @ 4.5 V 650 V ±18V 760 pF @ 480 V - - 3-PQFN (8x8) - 81W (Tc) -55°C ~ 150°C (TJ)
AON7422GS

AON7422GS

MOSFET N-CH 8SOIC

Alpha & Omega Semiconductor Inc.

4,055 -
AON7422GS

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AO4437L

AO4437L

MOSFET P-CH 12V 11A 8SOIC

Alpha & Omega Semiconductor Inc.

6,076 -
AO4437L

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11A (Ta) 1.8V, 4.5V 16mOhm @ 11A, 4.5V Surface Mount 1V @ 250µA 47 nC @ 4.5 V 12 V ±8V 4750 pF @ 6 V - - 8-SOIC - 3W (Ta) -55°C ~ 150°C (TJ)
AO4446

AO4446

MOSFET N-CH 30V 15A 8SOIC

Alpha & Omega Semiconductor Inc.

8,215 -
AO4446

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Ta) 4.5V, 10V 8.5mOhm @ 15A, 10V Surface Mount 3V @ 250µA 40 nC @ 10 V 30 V ±20V - - - 8-SOIC - 3W (Ta) -55°C ~ 150°C (TJ)
AO4498EL

AO4498EL

MOSFET N-CH 30V 18A 8SOIC

Alpha & Omega Semiconductor Inc.

4,848 -
AO4498EL

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Ta) 4.5V, 10V 5.8mOhm @ 18A, 10V Surface Mount 2.3V @ 250µA 50 nC @ 10 V 30 V ±20V 2760 pF @ 15 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
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