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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRF9321TRPBFXTMA1

IRF9321TRPBFXTMA1

TRENCH <= 40V

Infineon Technologies

2,720 -
IRF9321TRPBFXTMA1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 15A (Ta) 4.5V, 10V 7.2mOhm @ 15A, 10V Surface Mount 2.4V @ 50µA 98 nC @ 10 V 30 V ±20V 2590 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
DMP1012UCB9-7

DMP1012UCB9-7

MOSFET P-CH 8V 10A U-WLB1515-9

Diodes Incorporated

5,509 -
DMP1012UCB9-7

数据表

- 9-UFBGA, WLBGA Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 10A (Ta) 2.5V, 4.5V 10mOhm @ 2A, 4.5V Surface Mount 1.1V @ 250µA 10.5 nC @ 4.5 V 8 V -6V 1060 pF @ 4 V - - U-WLB1515-9 - 890mW (Ta) -55°C ~ 150°C (TJ)
DMTH45M5LFVW-7

DMTH45M5LFVW-7

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

9,383 -
DMTH45M5LFVW-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 71A (Tc) 4.5V, 10V 5.5mOhm @ 25A, 10V Surface Mount, Wettable Flank 2.3V @ 250µA 13.9 nC @ 10 V 40 V ±20V 978 pF @ 20 V - - PowerDI3333-8 (SWP) Type UX - 3.5W (Ta), 51W (Tc) -55°C ~ 175°C (TJ)
SPP11N60S5XKSA1

SPP11N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies

6,833 -
SPP11N60S5XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 7A, 10V Through Hole 5.5V @ 500µA 54 nC @ 10 V 600 V ±20V 1460 pF @ 25 V - - PG-TO220-3-1 - 125W (Tc) -55°C ~ 150°C (TJ)
BSC020N03LSGATMA2

BSC020N03LSGATMA2

LV POWER MOS

Infineon Technologies

4,242 -
BSC020N03LSGATMA2

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPB50N12S3L15ATMA1

IPB50N12S3L15ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

6,711 -
IPB50N12S3L15ATMA1

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 15.7mOhm @ 50A, 10V Surface Mount 2.4V @ 60µA 57 nC @ 10 V 120 V ±20V 4180 pF @ 25 V AEC-Q101 - PG-TO263-3-2 Automotive 100W (Tc) -55°C ~ 175°C (TJ)
IPB70N12S3L12ATMA1

IPB70N12S3L12ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

2,832 -
IPB70N12S3L12ATMA1

数据表

OptiMOS™ T TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 12.1mOhm @ 70A, 10V Surface Mount 2.4V @ 83µA 77 nC @ 10 V 120 V ±20V 5550 pF @ 25 V AEC-Q101 - PG-TO263-3-2 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
IPD70N12S3L12ATMA1

IPD70N12S3L12ATMA1

MOSFET N-CHANNEL_100+

Infineon Technologies

8,025 -
IPD70N12S3L12ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 11.5mOhm @ 70A, 10V Surface Mount 2.4V @ 83µA 77 nC @ 10 V 120 V ±20V 5550 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 125W (Tc) -55°C ~ 175°C (TJ)
IPC302N15N3X7SA1

IPC302N15N3X7SA1

MV POWER MOS

Infineon Technologies

5,629 -
IPC302N15N3X7SA1

数据表

OptiMOS™ 3 Die Bulk Active N-Channel MOSFET (Metal Oxide) - 10V 100mOhm @ 2A, 10V Surface Mount 4V @ 270µA - 150 V - - - - Die - - -
IPT043N15N5ATMA1

IPT043N15N5ATMA1

MV POWER MOS

Infineon Technologies

2,070 -
IPT043N15N5ATMA1

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
BSP612PH6327XTSA1

BSP612PH6327XTSA1

SMALL SIGNAL+P-CH

Infineon Technologies

7,464 -
BSP612PH6327XTSA1

数据表

OptiMOS™ - Tape & Reel (TR) Obsolete - - 3A (Ta) - - - - - - - - AEC-Q101 - - Automotive - -
DMTH45M5SFVW-7

DMTH45M5SFVW-7

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

4,390 -
DMTH45M5SFVW-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 71A (Tc) 10V 5.5mOhm @ 25A, 10V Surface Mount, Wettable Flank 3.5V @ 250µA 13.2 nC @ 10 V 40 V ±20V 1083 pF @ 20 V - - PowerDI3333-8 (SWP) Type UX - 3.5W (Ta), 51W (Tc) -55°C ~ 175°C (TJ)
AOD5N50

AOD5N50

MOSFET N-CH 500V 5A TO252

Alpha & Omega Semiconductor Inc.

7,799 -
AOD5N50

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.6Ohm @ 2.5A, 10V Surface Mount 4.5V @ 250µA 14 nC @ 10 V 500 V ±30V 670 pF @ 25 V - - TO-252 (DPAK) - 104W (Tc) -50°C ~ 150°C (TJ)
2SJ438(AISIN,A,Q)

2SJ438(AISIN,A,Q)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

5,112 -
2SJ438(AISIN,A,Q)

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
2SJ438(AISIN,Q,M)

2SJ438(AISIN,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

9,169 -
2SJ438(AISIN,Q,M)

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
2SJ438(CANO,Q,M)

2SJ438(CANO,Q,M)

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

4,507 -
2SJ438(CANO,Q,M)

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
2SJ438,MDKQ(J

2SJ438,MDKQ(J

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

9,030 -
2SJ438,MDKQ(J

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
2SJ438,MDKQ(M

2SJ438,MDKQ(M

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

5,627 -
2SJ438,MDKQ(M

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
2SJ438,Q(J

2SJ438,Q(J

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

7,048 -
2SJ438,Q(J

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
2SJ438,Q(M

2SJ438,Q(M

MOSFET P-CH TO220NIS

Toshiba Semiconductor and Storage

8,358 -
2SJ438,Q(M

数据表

- TO-220-3 Full Pack Bulk Obsolete - - 5A (Tj) - - Through Hole - - - - - - - TO-220NIS - - -
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