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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PH5030ALS,115

PH5030ALS,115

MOSFET N-CH 30V TRENCH LFPACK

NXP USA Inc.

2,280 -
PH5030ALS,115

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
STP2NK60Z

STP2NK60Z

MOSFET N-CH 600V 1.4A TO220AB

STMicroelectronics

7,294 -
STP2NK60Z

数据表

SuperMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 8Ohm @ 700mA, 10V Through Hole 4.5V @ 50µA 10 nC @ 10 V 600 V ±30V 170 pF @ 25 V - - TO-220 - 45W (Tc) -55°C ~ 150°C (TJ)
IPS60R2K1CEAKMA1

IPS60R2K1CEAKMA1

CONSUMER

Infineon Technologies

7,230 -
IPS60R2K1CEAKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.7A (Tj) 10V 2.1Ohm @ 760mA, 10V Through Hole 3.5V @ 60µA 6.7 nC @ 10 V 600 V ±20V 140 pF @ 100 V - - PG-TO251-3 - 38W (Tc) -40°C ~ 150°C (TJ)
IPS60R650CEAKMA1

IPS60R650CEAKMA1

CONSUMER

Infineon Technologies

3,486 -
IPS60R650CEAKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.9A (Tj) 10V 650mOhm @ 2.4A, 10V Through Hole 3.5V @ 200µA 20.5 nC @ 10 V 600 V ±20V 440 pF @ 100 V - - PG-TO251-3 - 82W (Tc) -40°C ~ 150°C (TJ)
SPP20N60S5HKSA1

SPP20N60S5HKSA1

HIGH POWER_LEGACY

Infineon Technologies

9,742 -
SPP20N60S5HKSA1

数据表

CoolMOS™ TO-220-3 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 13A, 10V Through Hole 5.5V @ 1mA 103 nC @ 10 V 600 V ±20V 3000 pF @ 25 V - - PG-TO220-3-1 - 208W (Tc) -55°C ~ 150°C (TJ)
IPD50R399CPBTMA1

IPD50R399CPBTMA1

LOW POWER_LEGACY

Infineon Technologies

4,251 -
IPD50R399CPBTMA1

数据表

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 399mOhm @ 4.9A, 10V Surface Mount 3.5V @ 330µA 23 nC @ 10 V 500 V ±20V 890 pF @ 100 V - - PG-TO252-3-313 - 83W (Tc) -55°C ~ 150°C (TJ)
IPD50R520CPATMA1

IPD50R520CPATMA1

LOW POWER_LEGACY

Infineon Technologies

6,030 -
IPD50R520CPATMA1

数据表

CoolMOS™ CP TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V Surface Mount 3.5V @ 250µA 17 nC @ 10 V 500 V ±20V 680 pF @ 100 V - - PG-TO252-3-313 - 66W (Tc) -55°C ~ 150°C (TJ)
IPD65R600C6ATMA1

IPD65R600C6ATMA1

LOW POWER_LEGACY

Infineon Technologies

7,399 -
IPD65R600C6ATMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V Surface Mount 3.5V @ 210µA 23 nC @ 10 V 650 V ±20V 440 pF @ 100 V - - PG-TO252-3-313 - 63W (Tc) -55°C ~ 150°C (TJ)
SPP04N50C3XKSA1

SPP04N50C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

8,903 -
SPP04N50C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V Through Hole 3.9V @ 200µA 22 nC @ 10 V 560 V ±20V 470 pF @ 25 V - - PG-TO220-3-1 - 50W (Tc) -55°C ~ 150°C (TJ)
SPP06N60C3XKSA1

SPP06N60C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

4,318 -
SPP06N60C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V Through Hole 3.9V @ 260µA 31 nC @ 10 V 600 V ±20V 620 pF @ 25 V - - PG-TO220-3-1 - 74W (Tc) -55°C ~ 150°C (TJ)
SPP07N60S5HKSA1

SPP07N60S5HKSA1

LOW POWER_LEGACY

Infineon Technologies

8,882 -
SPP07N60S5HKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V Through Hole 5.5V @ 350µA 35 nC @ 10 V 600 V ±20V 970 pF @ 25 V - - PG-TO220-3-1 - 83W (Tc) -55°C ~ 150°C (TJ)
SPP07N60S5XKSA1

SPP07N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies

5,457 -
SPP07N60S5XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V Through Hole 5.5V @ 350µA 35 nC @ 10 V 600 V ±20V 970 pF @ 25 V - - PG-TO220-3-1 - 83W (Tc) -55°C ~ 150°C (TJ)
SPP07N65C3XKSA1

SPP07N65C3XKSA1

LOW POWER_LEGACY

Infineon Technologies

6,641 -
SPP07N65C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V Through Hole 3.9V @ 350µA 27 nC @ 10 V 650 V ±20V 790 pF @ 25 V - - PG-TO220-3-1 - 83W (Tc) -55°C ~ 150°C (TJ)
FDZ493P

FDZ493P

MOSFET P-CH 20V 4.6A 9BGA

onsemi

3,630 -
FDZ493P

数据表

PowerTrench® 9-WFBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.6A (Ta) 2.5V, 4.5V 46mOhm @ 4.6A, 4.5V Surface Mount 1.5V @ 250µA 11 nC @ 4.5 V 20 V ±12V 754 pF @ 10 V - - 9-BGA (1.55x1.55) - 1.7W (Ta) -55°C ~ 150°C (TJ)
SIPC03S2N03LX3MA1

SIPC03S2N03LX3MA1

LV POWER MOS

Infineon Technologies

2,268 -
SIPC03S2N03LX3MA1

数据表

* - Tape & Reel (TR) Not For New Designs - - - - - - - - - - - - - - - - -
FDM606P

FDM606P

MOSFET P-CH 20V 6.8A 8MLP

onsemi

6,451 -
FDM606P

数据表

PowerTrench® 8-SMD, Flat Lead Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.8A (Tc) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V Surface Mount 1.5V @ 250µA 30 nC @ 4.5 V 20 V ±8V 2200 pF @ 10 V - - 8-MLP, MicroFET (3x2) - 1.92W (Ta) -55°C ~ 150°C (TJ)
SIS334DN-T1-GE3

SIS334DN-T1-GE3

MOSFET N-CH 30V 20A PPAK1212-8

Vishay Siliconix

7,450 -
SIS334DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 4.5V, 10V 11.3mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 18 nC @ 10 V 30 V ±20V 640 pF @ 15 V - - PowerPAK® 1212-8 - 3.8W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
SIS698DN-T1-GE3

SIS698DN-T1-GE3

MOSFET N-CH 100V 6.9A PPAK1212-8

Vishay Siliconix

7,899 -
SIS698DN-T1-GE3

数据表

- PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.9A (Tc) 6V, 10V 195mOhm @ 2.5A, 10V Surface Mount 3.5V @ 250µA 8 nC @ 10 V 100 V ±20V 210 pF @ 50 V - - PowerPAK® 1212-8 - 19.8W (Tc) -55°C ~ 150°C (TJ)
DMP1008UCB9-7

DMP1008UCB9-7

MOSFET BVDSS: 8V~24V U-WLB1515-9

Diodes Incorporated

7,146 -
DMP1008UCB9-7

数据表

- 9-UFBGA, WLBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.8A (Ta) 2.5V, 4.5V 5.7mOhm @ 2A, 4.5V Surface Mount 1.1V @ 250µA 8.2 nC @ 4.5 V 8 V -6V 900 pF @ 4 V - - U-WLB1515-9 - 840mW (Ta) -55°C ~ 150°C (TJ)
FQD7P06TM_NB82050

FQD7P06TM_NB82050

MOSFET P-CH 60V 5.4A DPAK

onsemi

2,031 -
FQD7P06TM_NB82050

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.4A (Tc) 10V 451mOhm @ 2.7A, 10V Surface Mount 4V @ 250µA 8.2 nC @ 10 V 60 V ±25V 295 pF @ 25 V - - TO-252AA - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ)
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