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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FDMS9411L-F085

FDMS9411L-F085

MOSFET N-CH 40V 30A POWER56

onsemi

4,464 -
FDMS9411L-F085

数据表

PowerTrench® 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 7mOhm @ 30A, 10V Surface Mount 3V @ 250µA 28 nC @ 10 V 40 V ±20V 1210 pF @ 20 V AEC-Q101 - Power56 Automotive 50W (Tj) -55°C ~ 175°C (TJ)
62-0095PBF

62-0095PBF

MOSFET N-CH 20V 10A/12A 8SOIC

Infineon Technologies

9,346 -
62-0095PBF

数据表

- - Tube Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta), 12A (Tc) 10V 13.4mOhm @ 10A, 10V Surface Mount 2.55V @ 250µA 11 nC @ 4.5 V 20 V - 900 pF @ 10 V - - - - 2W -55°C ~ 150°C (TJ)
62-0136PBF

62-0136PBF

MOSFET N-CH 30V 19A 8-SOIC

Infineon Technologies

7,341 -
62-0136PBF

数据表

- - Tube Obsolete N-Channel MOSFET (Metal Oxide) 19A (Ta) 10V 4.5mOhm @ 19A, 10V Surface Mount 2.25V @ 250µA 44 nC @ 4.5 V 30 V ±20V 3710 pF @ 15 V - - - - 2.5W -55°C ~ 150°C (TA)
62-0218PBF

62-0218PBF

MOSFET P-CH 30V 9.2A 8-SO

Infineon Technologies

6,666 -
62-0218PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
62-0258PBF

62-0258PBF

MOSFET P-CH 30V 9.2A 8-SO

Infineon Technologies

9,309 -
62-0258PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
64-2028

64-2028

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

8,547 -
64-2028

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
64-2120PBF

64-2120PBF

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies

4,809 -
64-2120PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
64-2127PBF

64-2127PBF

MOSFET N-CH 100V 190A D2PAK-7

Infineon Technologies

4,406 -
64-2127PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
64-2137PBF

64-2137PBF

MOSFET N-CH 75V 106A D2PAK

Infineon Technologies

5,601 -
64-2137PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
64-2143PBF

64-2143PBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies

4,790 -
64-2143PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
64-2155PBF

64-2155PBF

MOSFET N-CH 150V 86A D2PAK

Infineon Technologies

5,148 -
64-2155PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
94-2183PBF

94-2183PBF

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies

9,369 -
94-2183PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
94-2436PBF

94-2436PBF

MOSFET N-CH 55V 30A DPAK

Infineon Technologies

5,400 -
94-2436PBF

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
98-0193

98-0193

IC MOSFET HS PWR SW 35A D2PAK

Infineon Technologies

4,894 -
98-0193

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
AUXBNLS3036TRL

AUXBNLS3036TRL

MOSFET N-CH 60V 195A D2-PAK

Infineon Technologies

6,271 -
AUXBNLS3036TRL

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
AUXDIFZ44ESTRL

AUXDIFZ44ESTRL

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies

6,674 -
AUXDIFZ44ESTRL

数据表

* - Tube Active - - - - - - - - - - - - - - - - -
IPI50R399CPXKSA2

IPI50R399CPXKSA2

MOSFET N-CH 500V 9A TO262-3

Infineon Technologies

4,556 -
IPI50R399CPXKSA2

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 399mOhm @ 4.9A, 10V Through Hole 3.5V @ 330µA 23 nC @ 10 V 500 V ±20V 890 pF @ 100 V - - PG-TO262-3 - 83W (Tc) -55°C ~ 150°C (TJ)
IPP023N04NGHKSA1

IPP023N04NGHKSA1

MOSFET N-CH 40V 90A TO220-3

Infineon Technologies

8,760 -
IPP023N04NGHKSA1

数据表

OptiMOS™ 3 - Tube Active - - - - - - - - - - - - - - - - -
IPP037N06L3GHKSA1

IPP037N06L3GHKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies

4,133 -
IPP037N06L3GHKSA1

数据表

OptiMOS™ 3 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 3.7mOhm @ 90A, 10V Through Hole 2.2V @ 93µA 79 nC @ 4.5 V 60 V ±20V 13000 pF @ 30 V - - PG-TO220-3-1 - 167W (Tc) -55°C ~ 175°C (TJ)
IPP05CN10NGHKSA1

IPP05CN10NGHKSA1

MOSFET N-CH 100V 100A TO-220

Infineon Technologies

8,386 -
IPP05CN10NGHKSA1

数据表

OptiMOS™ 2 - Tube Active - - 100A (Tc) - - - - - - - - - - - - - -
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