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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSS87 E6433

BSS87 E6433

MOSFET N-CH 240V 260MA SOT89

Infineon Technologies

4,325 -
BSS87 E6433

数据表

SIPMOS® TO-243AA Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 260mA (Ta) 4.5V, 10V 6Ohm @ 260mA, 10V Surface Mount 1.8V @ 108µA 5.5 nC @ 10 V 240 V ±20V 97 pF @ 25 V - - PG-SOT89 - 1W (Ta) -55°C ~ 150°C (TJ)
AOI4185

AOI4185

MOSFET P-CH 40V 40A TO251A

Alpha & Omega Semiconductor Inc.

9,806 -
AOI4185

数据表

- TO-251-3 Stub Leads, IPAK Tube Active P-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V Through Hole 3V @ 250µA 55 nC @ 10 V 40 V ±20V 2550 pF @ 20 V - - TO-251A - 2.5W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ)
GT040N04D5I

GT040N04D5I

N40V,110A,RD<3.5M@10V,VTH1.0V~2.

Goford Semiconductor

2,055 -
GT040N04D5I

数据表

- 8-PowerTDFN Obsolete N-Channel MOSFET (Metal Oxide) 110A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 50 nC @ 10 V 40 V ±20V 2298 pF @ 20 V - - 8-DFN (4.9x5.75) - 160W (Tc) -55°C ~ 150°C (TJ)
SSM3K7002BF,LF

SSM3K7002BF,LF

MOSFET N-CH 60V 200MA SC59

Toshiba Semiconductor and Storage

2,857 -
SSM3K7002BF,LF

数据表

U-MOSIV TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 4.5V, 10V 2.1Ohm @ 500mA, 10V Surface Mount - - 60 V ±20V 17 pF @ 25 V - - SC-59 - 200mW (Ta) 150°C (TJ)
NTF3055-160T3LF

NTF3055-160T3LF

MOSFET N-CH 60V 2A SOT223

onsemi

6,121 -
NTF3055-160T3LF

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 160mOhm @ 1A, 10V Surface Mount 4V @ 250µA 14 nC @ 10 V 60 V ±20V 280 pF @ 25 V - - SOT-223 (TO-261) - 1.3W (Ta) -55°C ~ 175°C (TJ)
DMN10H170SFGQ-13

DMN10H170SFGQ-13

MOSFET N-CH 100V PWRDI3333

Diodes Incorporated

4,033 -
DMN10H170SFGQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.9A (Ta), 8.5A (Tc) 4.5V, 10V 122mOhm @ 3.3A, 10V Surface Mount 3V @ 250µA 14.9 nC @ 10 V 100 V ±20V 870.7 pF @ 25 V AEC-Q101 - POWERDI3333-8 Automotive 940mW (Ta) -55°C ~ 150°C (TJ)
DMN39M1LFVWQ-7

DMN39M1LFVWQ-7

LINEAR IC

Diodes Incorporated

7,803 -
DMN39M1LFVWQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 87A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 40 nC @ 10 V 30 V ±20V 2387 pF @ 15 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 1.3W (Ta) -55°C ~ 150°C (TJ)
DMTH45M5SFVW-13

DMTH45M5SFVW-13

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

8,915 -
DMTH45M5SFVW-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 71A (Tc) 10V 5.5mOhm @ 25A, 10V Surface Mount, Wettable Flank 3.5V @ 250µA 13.2 nC @ 10 V 40 V ±20V 1083 pF @ 20 V - - PowerDI3333-8 (SWP) Type UX - 3.5W (Ta), 51W (Tc) -55°C ~ 175°C (TJ)
DMTH45M5LFVW-13

DMTH45M5LFVW-13

MOSFET BVDSS: 31V~40V POWERDI333

Diodes Incorporated

3,169 -
DMTH45M5LFVW-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 71A (Tc) 4.5V, 10V 5.5mOhm @ 25A, 10V Surface Mount, Wettable Flank 2.3V @ 250µA 13.9 nC @ 10 V 40 V ±20V 978 pF @ 20 V - - PowerDI3333-8 (SWP) Type UX - 3.5W (Ta), 51W (Tc) -55°C ~ 175°C (TJ)
FQPF13N10L

FQPF13N10L

MOSFET N-CH 100V 8.7A TO220F

onsemi

3,098 -
FQPF13N10L

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8.7A (Tc) 5V, 10V 180mOhm @ 4.35A, 10V Through Hole 4V @ 250µA 12 nC @ 5 V 100 V ±20V 520 pF @ 25 V - - TO-220F-3 - 30W (Tc) -55°C ~ 175°C (TJ)
MCU20N10A-TP

MCU20N10A-TP

Interface

Micro Commercial Co

3,987 -
MCU20N10A-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 20A 4.5V, 10V 45mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 53 nC @ 10 V 100 V ±20V 2014 pF @ 50 V - - TO-252 (DPAK) - 47W -55°C ~ 150°C (TJ)
CPC3902CTR

CPC3902CTR

MOSFET N-CH 250V TO-243AA

IXYS Integrated Circuits Division

8,639 -
CPC3902CTR

数据表

- TO-243AA Tape & Reel (TR) Active N-Channel, Depletion Mode MOSFET (Metal Oxide) - 0V 2.5Ohm @ 300mA, 0V Surface Mount - - 250 V ±15V 230 pF @ 20 V - - SOT-89 - 1.8W (Ta) 125°C (TJ)
FQD7N20TM

FQD7N20TM

MOSFET N-CH 200V 5.3A DPAK

onsemi

5,234 -
FQD7N20TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Tc) 10V 690mOhm @ 2.65A, 10V Surface Mount 5V @ 250µA 10 nC @ 10 V 200 V ±30V 400 pF @ 25 V - - TO-252AA - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ)
IPU090N03L G

IPU090N03L G

MOSFET N-CH 30V 40A TO251-3

Infineon Technologies

6,256 -
IPU090N03L G

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V Through Hole 2.2V @ 250µA 15 nC @ 10 V 30 V ±20V 1600 pF @ 15 V - - PG-TO251-3 - 42W (Tc) -55°C ~ 175°C (TJ)
FQD13N10LTM_NBEL001

FQD13N10LTM_NBEL001

MOSFET N-CH 100V 10A DPAK

onsemi

5,575 -
FQD13N10LTM_NBEL001

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 5V, 10V 180mOhm @ 5A, 10V Surface Mount 2V @ 250µA 12 nC @ 5 V 100 V ±20V 520 pF @ 25 V - - TO-252AA - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ)
PHD20N06T,118

PHD20N06T,118

MOSFET N-CH 55V 18A DPAK

Nexperia USA Inc.

7,110 -
PHD20N06T,118

数据表

TrenchMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 77mOhm @ 10A, 10V Surface Mount 4V @ 1mA 11 nC @ 10 V 55 V ±20V 422 pF @ 25 V - - DPAK - 51W (Tc) -55°C ~ 175°C (TJ)
SI1065X-T1-GE3

SI1065X-T1-GE3

MOSFET P-CH 12V 1.18A SC89-6

Vishay Siliconix

8,826 -
SI1065X-T1-GE3

数据表

TrenchFET® SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.18A (Ta) 1.8V, 4.5V 156mOhm @ 1.18A, 4.5V Surface Mount 950mV @ 250µA 10.8 nC @ 5 V 12 V ±8V 480 pF @ 6 V - - SC-89 (SOT-563F) - 236mW (Ta) -55°C ~ 150°C (TJ)
SI2303BDS-T1

SI2303BDS-T1

MOSFET P-CH 30V 1.49A SOT23-3

Vishay Siliconix

4,801 -
SI2303BDS-T1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.49A (Ta) 4.5V, 10V 200mOhm @ 1.7A, 10V Surface Mount 3V @ 250µA 10 nC @ 10 V 30 V ±20V 180 pF @ 15 V - - SOT-23-3 (TO-236) - 700mW (Ta) -55°C ~ 150°C (TJ)
SI2331DS-T1-E3

SI2331DS-T1-E3

MOSFET P-CH 12V 3.2A SOT23-3

Vishay Siliconix

3,528 -
SI2331DS-T1-E3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.2A (Ta) 1.8V, 4.5V 48mOhm @ 3.6A, 4.5V Surface Mount 900mV @ 250µA 14 nC @ 4.5 V 12 V ±8V 780 pF @ 6 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
SI2331DS-T1-GE3

SI2331DS-T1-GE3

MOSFET P-CH 12V 3.2A SOT23-3

Vishay Siliconix

9,236 -
SI2331DS-T1-GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.2A (Ta) 1.8V, 4.5V 48mOhm @ 3.6A, 4.5V Surface Mount 900mV @ 250µA 14 nC @ 4.5 V 12 V ±8V 780 pF @ 6 V - - SOT-23-3 (TO-236) - 710mW (Ta) -55°C ~ 150°C (TJ)
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