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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMP3045LVTQ-13

DMP3045LVTQ-13

MOSFET BVDSS: 25V~30V TSOT26 T&R

Diodes Incorporated

8,530 -
DMP3045LVTQ-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.4A (Ta) 4.5V, 10V 42mOhm @ 4.9A, 10V Surface Mount 2.1V @ 250µA 14.3 nC @ 10 V 30 V ±20V 749 pF @ 15 V AEC-Q101 - TSOT-26 Automotive 1.6W (Ta) -55°C ~ 150°C (TJ)
2SJ053600L

2SJ053600L

MOSFET P-CH 30V 100MA SMINI3-G1

Panasonic Electronic Components

4,995 -
2SJ053600L

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 100mA (Ta) 5V 75Ohm @ 10mA, 5V Surface Mount 2V @ 1µA - 30 V ±20V - - - SMini3-G1 - 150mW (Ta) 150°C (TJ)
DMP3097LQ-7

DMP3097LQ-7

MOSFET BVDSS: 25V~30V SOT23 T&R

Diodes Incorporated

5,388 -
DMP3097LQ-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.9A (Ta) 4.5V, 10V 65mOhm @ 3.8A, 10V Surface Mount 2.1V @ 250µA 13.4 nC @ 10 V 30 V ±20V 563 pF @ 25 V AEC-Q101 - SOT-23-3 Automotive 1W -55°C ~ 150°C (TJ)
DMP3097LQ-13

DMP3097LQ-13

MOSFET BVDSS: 25V~30V SOT23 T&R

Diodes Incorporated

9,954 -
DMP3097LQ-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.9A (Ta) 4.5V, 10V 65mOhm @ 3.8A, 10V Surface Mount 2.1V @ 250µA 13.4 nC @ 10 V 30 V ±20V 563 pF @ 25 V AEC-Q101 - SOT-23-3 Automotive 1W -55°C ~ 150°C (TJ)
DMP3065LVT-13

DMP3065LVT-13

MOSFET P-CH 30V 5.1A TSOT-26

Diodes Incorporated

7,607 -
DMP3065LVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 5.1A (Ta) 4.5V, 10V 42mOhm @ 4.9A, 10V Surface Mount 2.1V @ 250µA 20 nC @ 10 V 30 V ±20V 880 pF @ 15 V - - TSOT-26 - 1.2W (Ta) -55°C ~ 150°C (TJ)
AO4450

AO4450

MOSFET N-CH 40V 7A 8SO

Alpha & Omega Semiconductor Inc.

6,175 -
AO4450

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Ta) 4.5V, 10V 30mOhm @ 7A, 10V Surface Mount 3V @ 250µA 13 nC @ 10 V 40 V ±20V 516 pF @ 20 V - - 8-SOIC - 3.1W (Ta) -55°C ~ 150°C (TJ)
RJK6018DPK-00#T0

RJK6018DPK-00#T0

MOSFET N-CH 600V 30A TO3P

Renesas Electronics Corporation

5,563 -
RJK6018DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 10V 235mOhm @ 15A, 10V Through Hole - 92 nC @ 10 V 600 V ±30V 4100 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJK6018DPM-00#T1

RJK6018DPM-00#T1

MOSFET N-CH 600V 30A TO3PFM

Renesas Electronics Corporation

8,156 -
RJK6018DPM-00#T1

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 30A (Ta) 10V 235mOhm @ 15A, 10V Through Hole - 92 nC @ 10 V 600 V ±30V 4100 pF @ 25 V - - TO-3PFM - 60W (Tc) 150°C (TJ)
DMP4047LFDEQ-13

DMP4047LFDEQ-13

MOSFET BVDSS: 31V~40V U-DFN2020-

Diodes Incorporated

6,051 -
DMP4047LFDEQ-13

数据表

- 6-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4.5V, 10V 34mOhm @ 4.4A, 10V Surface Mount 2.2V @ 250µA 24.9 nC @ 10 V 40 V ±20V 1265 pF @ 20 V AEC-Q101 - U-DFN2020-6 (Type E) Automotive 800mW (Ta) -55°C ~ 150°C (TJ)
RJK6020DPK-00#T0

RJK6020DPK-00#T0

MOSFET N-CH 600V 32A TO3P

Renesas Electronics Corporation

6,091 -
RJK6020DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 32A (Ta) 10V 175mOhm @ 16A, 10V Through Hole - 121 nC @ 10 V 600 V ±30V 5150 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
DMP2004KQ-7

DMP2004KQ-7

DIODE

Diodes Incorporated

9,733 -
DMP2004KQ-7

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 600mA (Ta) 1.8V, 4.5V 900mOhm @ 430mA, 4.5V Surface Mount 1V @ 250µA - 20 V ±8V 175 pF @ 16 V - - SOT-23-3 - 550mW -55°C ~ 150°C (TJ)
RJK6032DPH-E0#T2

RJK6032DPH-E0#T2

MOSFET N-CH 600V 3A TO251

Renesas Electronics Corporation

3,988 -
RJK6032DPH-E0#T2

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 4.3Ohm @ 1.5A, 10V Through Hole - 9 nC @ 10 V 600 V ±30V 285 pF @ 25 V - - TO-251 - 40.3W (Tc) 150°C (TJ)
RJL5012DPE-00#J3

RJL5012DPE-00#J3

MOSFET N-CH 500V 12A 4LDPAK

Renesas Electronics Corporation

7,665 -
RJL5012DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 700mOhm @ 6A, 10V Surface Mount - 27.8 nC @ 10 V 500 V ±30V 1050 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
DMN2029UVT-7

DMN2029UVT-7

MOSFET N-CH 6.8A TSOT26

Diodes Incorporated

4,512 -
DMN2029UVT-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.8A (Ta) 2.5V, 4.5V 24mOhm @ 6.2A, 4.5V Surface Mount 1.5V @ 250µA 7.1 nC @ 4.5 V 20 V ±10V 646 pF @ 10 V - - TSOT-26 - 700mW (Ta) -55°C ~ 150°C (TJ)
RJL5012DPP-M0#T2

RJL5012DPP-M0#T2

MOSFET N-CH 500V 12A TO220FL

Renesas Electronics Corporation

8,365 -
RJL5012DPP-M0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 700mOhm @ 6A, 10V Through Hole - 27.8 nC @ 10 V 500 V ±30V 1050 pF @ 25 V - - TO-220FL - 30W (Tc) 150°C (TJ)
RJL5014DPK-00#T0

RJL5014DPK-00#T0

MOSFET N-CH 500V 19A TO3P

Renesas Electronics Corporation

8,827 -
RJL5014DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Ta) 10V 400mOhm @ 9.5A, 10V Through Hole - 43 nC @ 10 V 500 V ±30V 1700 pF @ 25 V - - TO-3P - 150W (Tc) 150°C (TJ)
SI2302ADS-T1-GE3

SI2302ADS-T1-GE3

MOSFET N-CH 20V 2.1A SOT23-3

Vishay Siliconix

7,360 -
SI2302ADS-T1-GE3

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Ta) 2.5V, 4.5V 60mOhm @ 3.6A, 4.5V Surface Mount 1.2V @ 50µA 10 nC @ 4.5 V 20 V ±8V 300 pF @ 10 V - - SOT-23-3 (TO-236) - 700mW (Ta) -55°C ~ 150°C (TJ)
RJL5020DPK-00#T0

RJL5020DPK-00#T0

MOSFET N-CH 500V 38A TO3P

Renesas Electronics Corporation

9,043 -
RJL5020DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 38A (Ta) 10V 135mOhm @ 19A, 10V Through Hole - 140 nC @ 10 V 500 V ±30V 4750 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
RJL6012DPE-00#J3

RJL6012DPE-00#J3

MOSFET N-CH 600V 10A 4LDPAK

Renesas Electronics Corporation

8,732 -
RJL6012DPE-00#J3

数据表

- SC-83 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 1.1Ohm @ 5A, 10V Surface Mount - 28 nC @ 10 V 600 V ±30V 1050 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
DI040N03PT

DI040N03PT

MOSFET POWERQFN 3X3 N 30V

Diotec Semiconductor

5,264 -
DI040N03PT

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 7mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 12 nC @ 4.5 V 30 V ±20V 1120 pF @ 15 V - - 8-QFN (3x3) - 30W (Tc) -55°C ~ 175°C (TJ)
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