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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
MMFTP5618-AQ MOSFET SOT-23 P -60V -1.25A Diotec Semiconductor	6,562	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	1.25A (Ta)	4.5V, 10V	170mOhm @ 1.25A, 10V	Surface Mount	3V @ 1mA	7 nC @ 10 V	60 V	±20V	361 pF @ 30 V	AEC-Q101	-	SOT-23-3 (TO-236)	Automotive	500mW (Ta)	-55°C ~ 150°C (TJ)
MD10P380 MOSFET SOT-26 P -100V -1.6A Diotec Semiconductor	9,481	-	询价单	数据表	-	SOT-23-6 Thin, TSOT-23-6	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	1.6A (Ta)	4.5V, 10V	325mOhm @ 1A, 10V	Surface Mount	2.3V @ 250µA	16 nC @ 10 V	100 V	±20V	1046 pF @ 50 V	-	-	SOT-26	-	1W (Ta)	-55°C ~ 150°C (TJ)
UPA2813T1L-E2-AT MOSFET P-CH 30V 27A 8HWSON Renesas Electronics Corporation	6,815	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	27A (Tc)	4.5V, 10V	6.2mOhm @ 27A, 10V	Surface Mount	-	80 nC @ 10 V	30 V	±20V	3130 pF @ 10 V	-	-	8-HWSON (3.3x3.3)	-	1.5W (Ta)	150°C (TJ)
SI2392-TP Interface Micro Commercial Co	9,718	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	3A (Ta)	4.5V, 10V	140mOhm @ 3A, 10V	Surface Mount	3V @ 250µA	4.3 nC @ 10 V	100 V	±20V	206 pF @ 50 V	-	-	SOT-23	-	1.2W	-55°C ~ 150°C (TJ)
UPA2821T1L-E1-AT MOSFET N-CH 30V 26A 8HWSON Renesas Electronics Corporation	2,075	-	询价单	数据表	-	8-PowerWDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	26A (Tc)	4.5V, 10V	3.8mOhm @ 26A, 10V	Surface Mount	-	51 nC @ 10 V	30 V	±20V	2490 pF @ 10 V	-	-	8-HWSON (3.3x3.3)	-	1.5W (Ta)	150°C (TJ)
DMP2035UFDF-13 MOSFET P-CH 20V 8.1A 6UDFN Diodes Incorporated	2,151	-	询价单	数据表	-	6-UDFN Exposed Pad	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	8.1A (Ta)	1.5V, 4.5V	29mOhm @ 6.4A, 4.5V	Surface Mount	1V @ 250µA	20.5 nC @ 4.5 V	20 V	±8V	1808 pF @ 15 V	-	-	U-DFN2020-6 (Type F)	-	2.03W (Ta)	-55°C ~ 150°C (TJ)
PJS6416_S1_00001 20V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	3,599	-	询价单	数据表	-	SOT-23-6	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	7.4A (Ta)	1.8V, 4.5V	27mOhm @ 7.4A, 4.5V	Surface Mount	1.2V @ 250µA	6.8 nC @ 4.5 V	20 V	±12V	513 pF @ 10 V	-	-	SOT-23-6	-	2W (Ta)	-55°C ~ 150°C (TJ)
UPA2822T1L-E1-AT MOSFET N-CH 30V 34A 8HWSON Renesas Electronics Corporation	3,934	-	询价单	数据表	-	8-PowerWDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	34A (Tc)	4.5V, 10V	2.6mOhm @ 34A, 10V	Surface Mount	-	83 nC @ 10 V	30 V	±20V	4660 pF @ 10 V	-	-	8-HWSON (3.3x3.3)	-	1.5W (Ta)	150°C (TJ)
DMP2225LQ-7 MOSFET BVDSS: 8V~24V SOT23 T&R 3 Diodes Incorporated	9,542	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	P-Channel	MOSFET (Metal Oxide)	2.6A (Ta)	2.5V, 4.5V	110mOhm @ 2.6A, 4.5V	Surface Mount	1.25V @ 250µA	5.3 nC @ 4.5 V	20 V	±12V	250 pF @ 10 V	AEC-Q101	-	SOT-23-3	Automotive	1.08W	-55°C ~ 150°C (TJ)
DMG4N65CTI MOSFET N-CH 650V 4A ITO220AB Diodes Incorporated	3,443	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	3Ohm @ 2A, 10V	Through Hole	5V @ 250µA	13.5 nC @ 10 V	650 V	±30V	900 pF @ 25 V	-	-	ITO-220AB	-	8.35W (Ta)	-55°C ~ 150°C (TJ)
SIA439EDJ-T1-GE3 MOSFET P-CH 20V 28A PPAK SC70-6 Vishay Siliconix	3,415	-	询价单	数据表	TrenchFET®	PowerPAK® SC-70-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	28A (Tc)	1.8V, 4.5V	16.5mOhm @ 5A, 4.5V	Surface Mount	1V @ 250µA	69 nC @ 8 V	20 V	±8V	2410 pF @ 10 V	-	-	PowerPAK® SC-70-6	-	3.5W (Ta), 19W (Tc)	-50°C ~ 150°C (TJ)
EPC2018 GANFET N-CH 150V 12A DIE EPC	4,747	-	询价单	数据表	eGaN®	Die	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	GaNFET (Gallium Nitride)	12A (Ta)	5V	25mOhm @ 6A, 5V	Surface Mount	2.5V @ 3mA	7.5 nC @ 5 V	150 V	+6V, -5V	540 pF @ 100 V	-	-	Die	-	-	-40°C ~ 125°C (TJ)
AUIRFS8408-7TRR MOSFET N-CH 40V 240A D2PAK Infineon Technologies	3,489	-	询价单	数据表	HEXFET®	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	10V	1mOhm @ 100A, 10V	Surface Mount	3.9V @ 250µA	315 nC @ 10 V	40 V	±20V	10250 pF @ 25 V	-	-	PG-TO263-7-900	-	294W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8405TRL MOSFET N-CH 40V 120A D2PAK Infineon Technologies	9,205	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.3mOhm @ 100A, 10V	Surface Mount	3.9V @ 100µA	161 nC @ 10 V	40 V	±20V	5193 pF @ 25 V	-	-	PG-TO263-3	-	163W (Tc)	-55°C ~ 175°C (TJ)
AUIRFSL8405 MOSFET N-CH 40V 120A TO262 Infineon Technologies	9,560	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.3mOhm @ 100A, 10V	Through Hole	3.9V @ 100µA	161 nC @ 10 V	40 V	±20V	5193 pF @ 25 V	-	-	TO-262	-	163W (Tc)	-55°C ~ 175°C (TJ)
AUIRFU8403 MOSFET N-CH 40V 100A IPAK Infineon Technologies	2,184	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	3.1mOhm @ 76A, 10V	Through Hole	3.9V @ 100µA	99 nC @ 10 V	40 V	±20V	3171 pF @ 25 V	-	-	IPAK	-	99W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8403 MOSFET N-CH 40V 123A D2PAK Infineon Technologies	4,240	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	123A (Tc)	10V	3.3mOhm @ 70A, 10V	Surface Mount	3.9V @ 100µA	93 nC @ 10 V	40 V	±20V	3183 pF @ 25 V	-	-	PG-TO263-3	-	99W (Tc)	-55°C ~ 175°C (TJ)
AUIRFSL8403 MOSFET N-CH 40V 123A TO262 Infineon Technologies	4,648	-	询价单	数据表	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	123A (Tc)	10V	3.3mOhm @ 70A, 10V	Through Hole	3.9V @ 100µA	93 nC @ 10 V	40 V	±20V	3183 pF @ 25 V	-	-	TO-262	-	99W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8405 MOSFET N-CH 40V 120A D2PAK Infineon Technologies	8,521	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	120A (Tc)	10V	2.3mOhm @ 100A, 10V	Surface Mount	3.9V @ 100µA	161 nC @ 10 V	40 V	±20V	5193 pF @ 25 V	-	-	PG-TO263-3	-	163W (Tc)	-55°C ~ 175°C (TJ)
AUIRFS8407 MOSFET N-CH 40V 195A D2PAK Infineon Technologies	2,661	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	10V	1.8mOhm @ 100A, 10V	Surface Mount	4V @ 150µA	225 nC @ 10 V	40 V	±20V	7330 pF @ 25 V	-	-	PG-TO263-3	-	230W (Tc)	-55°C ~ 175°C (TJ)

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