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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSS100

BSS100

MOSFET N-CH 100V 220MA TO92-3

onsemi

8,977 -
BSS100

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 220mA (Ta) - 6Ohm @ 220mA, 10V Through Hole 2V @ 1mA 2 nC @ 10 V 100 V - 60 pF @ 25 V - - TO-92-3 - - -
BSS110

BSS110

MOSFET P-CH 50V 170MA TO92-3

onsemi

9,357 -
BSS110

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 170mA (Ta) - 10Ohm @ 170mA, 10V Through Hole 2V @ 1mA - 50 V - 40 pF @ 25 V - - TO-92-3 - - -
DMG3402LQ-13

DMG3402LQ-13

MOSFET N-CH 30V 4A SOT23

Diodes Incorporated

9,858 -
DMG3402LQ-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta) 2.5V, 10V 52mOhm @ 4A, 10V Surface Mount 1.4V @ 250µA 11.7 nC @ 10 V 30 V ±12V 464 pF @ 15 V AEC-Q101 - SOT-23-3 Automotive 1.4W -55°C ~ 150°C (TJ)
DMP21D0UFB-7

DMP21D0UFB-7

MOSFET P-CH 20V 770MA 3DFN

Diodes Incorporated

3,218 -
DMP21D0UFB-7

数据表

- 3-UFDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 770mA (Ta) 1.8V, 4.5V 495mOhm @ 400mA, 4.5V Surface Mount 1V @ 250µA 1.5 nC @ 8 V 20 V ±8V 76.5 pF @ 10 V - - X1-DFN1006-3 - 430mW (Ta) -55°C ~ 150°C (TJ)
MCG120N10L-TP

MCG120N10L-TP

N-CHANNEL MOSFET,PDFN3333

Micro Commercial Co

8,516 -
MCG120N10L-TP

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 4.5V, 10V 120mOhm @ 8A, 10V Surface Mount 2.3V @ 250µA 19 nC @ 10 V 100 V ±20V 998 pF @ 50 V - - PDFN3333 - 35W (Tj) -55°C ~ 175°C (TJ)
G08N02H

G08N02H

N20V, 12A, RD<[email protected],VTH0.5V

Goford Semiconductor

6,927 -
G08N02H

数据表

- TO-261-4, TO-261AA Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 2.5V, 4.5V 11.3mOhm @ 1A, 4.5V Surface Mount 900mV @ 250µA 12.5 nC @ 4.5 V 20 V ±12V 1255 pF @ 10 V - - SOT-223 - 1.7W (Tc) -55°C ~ 150°C (TJ)
NOCATSTYPE

NOCATSTYPE

MOSFET PMV77EN TO-236AB REELLP

NXP USA Inc.

7,088 -
NOCATSTYPE

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - - -
SL02P06Y-TP

SL02P06Y-TP

MOSFET

Micro Commercial Co

4,661 -
SL02P06Y-TP

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 120mOhm @ 2A, 10V Surface Mount 2.5V @ 250µA 6.8 nC @ 10 V 60 V ±20V 302 pF @ 25 V - - SOT-23-3L - 1.3W (Tj) -55°C ~ 150°C (TJ)
2N7000RLRA

2N7000RLRA

MOSFET N-CH 60V 200MA TO92-3

onsemi

8,040 -
2N7000RLRA

数据表

- TO-226-3, TO-92-3 Long Body, Formed Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V Through Hole 3V @ 1mA - 60 V ±20V 60 pF @ 25 V - - TO-92 (TO-226) - 350mW (Tc) -55°C ~ 150°C (TJ)
DMP2066LVT-13

DMP2066LVT-13

MOSFET P-CH 20V 4.5A TSOT26

Diodes Incorporated

8,217 -
DMP2066LVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.5A (Ta) 2.5V, 4.5V 45mOhm @ 4.5A, 4.5V Surface Mount 1.5V @ 250µA 14.4 nC @ 4.5 V 20 V ±8V 1496 pF @ 15 V - - TSOT-23-6 - 1.2W (Ta) -55°C ~ 150°C (TJ)
DI025N06PT

DI025N06PT

MOSFET POWERQFN 3X3 N 65V

Diotec Semiconductor

6,964 -
DI025N06PT

数据表

- 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 20mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 9 nC @ 30 V 65 V ±20V 406 pF @ 30 V - - 8-QFN (3x3) - 25W (Tc) -55°C ~ 150°C (TJ)
CMLM8205 TR

CMLM8205 TR

DIODE

Central Semiconductor Corp

8,172 -
CMLM8205 TR

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 280mA (Ta) 5V, 10V 2.5Ohm @ 500mA, 10V Surface Mount 2.5V @ 250µA - 50 V 20V 70 pF @ 25 V - Schottky Diode (Isolated) SOT-563 - 150mW (Ta) -65°C ~ 150°C (TJ)
RJK4006DPP-M0#T2

RJK4006DPP-M0#T2

MOSFET N-CH 400V 8A TO220FL

Renesas Electronics Corporation

8,491 -
RJK4006DPP-M0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 800mOhm @ 4A, 10V Through Hole - 20 nC @ 10 V 400 V ±30V 620 pF @ 25 V - - TO-220FL - 29W (Tc) 150°C (TJ)
DMP3028LFDEQ-13

DMP3028LFDEQ-13

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

9,967 -
DMP3028LFDEQ-13

数据表

- 6-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.8A (Ta) 4.5V, 10V 25mOhm @ 7A, 10V Surface Mount 2.4V @ 250µA 33 nC @ 10 V 30 V ±20V 1860 pF @ 15 V AEC-Q101 - U-DFN2020-6 (Type E) Automotive 660mW (Ta) -55°C ~ 150°C (TJ)
RJK4007DPP-M0#T2

RJK4007DPP-M0#T2

MOSFET N-CH 400V 7.6A TO220FL

Renesas Electronics Corporation

2,318 -
RJK4007DPP-M0#T2

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7.6A (Ta) 10V 550mOhm @ 7A, 10V Through Hole - 24.5 nC @ 10 V 400 V ±30V 850 pF @ 25 V - - TO-220FL - 32W (Tc) 150°C (TJ)
SIL2612-TP

SIL2612-TP

SMALL SINGAL MOSFETS,SOT23-6L

Micro Commercial Co

7,322 -
SIL2612-TP

数据表

- SOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Ta) 4.5V, 10V 590mOhm @ 1A, 10V Surface Mount 2.5V @ 250µA 15 nC @ 10 V 200 V ±20V 665 pF @ 100 V - - SOT-23-6L - 1.4W (Tj) -55°C ~ 150°C (TJ)
RJK4013DPE-00#J3

RJK4013DPE-00#J3

MOSFET N-CH 400V 17A 4LDPAK

Renesas Electronics Corporation

8,115 -
RJK4013DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta) 10V 300mOhm @ 8.5A, 10V Surface Mount - 38 nC @ 10 V 400 V ±30V 1450 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
DMP2067LVTQ-13

DMP2067LVTQ-13

MOSFET BVDSS: 8V~24V TSOT26 T&R

Diodes Incorporated

4,708 -
DMP2067LVTQ-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.2A (Ta) 2.5V, 4.5V 45mOhm @ 4.5A, 4.5V Surface Mount 1.5V @ 250µA 28 nC @ 8 V 20 V ±8V 1575 pF @ 10 V AEC-Q101 - TSOT-26 Automotive 1.2W (Ta) -55°C ~ 150°C (TJ)
RJK4018DPK-00#T0

RJK4018DPK-00#T0

MOSFET N-CH 400V 43A TO3P

Renesas Electronics Corporation

7,624 -
RJK4018DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 43A (Ta) 10V 100mOhm @ 21.5A, 10V Through Hole - 99 nC @ 10 V 400 V ±30V 4100 pF @ 25 V - - TO-3P - 200W (Tc) 150°C (TJ)
DMN1019UVT-13

DMN1019UVT-13

MOSFET N-CH 12V 10.7A TSOT26

Diodes Incorporated

7,574 -
DMN1019UVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10.7A (Ta) 1.2V, 4.5V 10mOhm @ 9.7A, 4.5V Surface Mount 800mV @ 250µA 50.4 nC @ 8 V 12 V ±8V 2588 pF @ 10 V - - TSOT-26 - 1.73W (Ta) -55°C ~ 150°C (TJ)
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