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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
RJK5031DPD-00#J2

RJK5031DPD-00#J2

MOSFET N-CH 500V 3A MP3A

Renesas Electronics Corporation

2,060 -
RJK5031DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 3.2Ohm @ 1.5A, 10V Surface Mount - - 500 V ±30V 280 pF @ 25 V - - MP-3A - 40.3W (Tc) 150°C (TJ)
AO7410

AO7410

MOSFET N-CH 30V 1.7A SC70-3

Alpha & Omega Semiconductor Inc.

7,062 -
AO7410

数据表

- SC-70, SOT-323 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 2.5V, 10V 55mOhm @ 1.7A, 10V Surface Mount 1.5V @ 250µA 12 nC @ 10 V 30 V ±12V 285 pF @ 15 V - - SC-70-3 - 350mW (Ta) -55°C ~ 150°C (TJ)
RJK5034DPP-E0#T2

RJK5034DPP-E0#T2

MOSFET N-CH 500V 1.2A TO220

Renesas Electronics Corporation

5,641 -
RJK5034DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Discontinued at Digi-Key - - - - - Through Hole - - - - - - - TO-220FP - - -
RJK6002DPD-00#J2

RJK6002DPD-00#J2

MOSFET N-CH 600V 2A MP3A

Renesas Electronics Corporation

4,027 -
RJK6002DPD-00#J2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 10V 6.8Ohm @ 1A, 10V Surface Mount - 6.2 nC @ 10 V 600 V ±30V 165 pF @ 25 V - - MP-3A - 30W (Tc) 150°C (TJ)
DMP3045LVT-13

DMP3045LVT-13

MOSFET BVDSS: 25V~30V TSOT26 T&R

Diodes Incorporated

2,371 -
DMP3045LVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.4A (Ta) 4.5V, 10V 42mOhm @ 4.9A, 10V Surface Mount 2.1V @ 250µA 14.3 nC @ 10 V 30 V ±20V 749 pF @ 15 V - - TSOT-26 - 1.2W (Ta) -55°C ~ 150°C (TJ)
RJK6011DJE-00#Z0

RJK6011DJE-00#Z0

MOSFET N-CH 600V 100MA TO92MOD

Renesas Electronics Corporation

9,213 -
RJK6011DJE-00#Z0

数据表

- TO-226-3, TO-92-3 Long Body, Formed Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100mA (Ta) 10V 52Ohm @ 50mA, 10V Through Hole - 3.7 nC @ 10 V 600 V ±30V 25 pF @ 25 V - - TO-92MOD - 900mW (Ta) 150°C (TJ)
SIS822DNT-T1-GE3

SIS822DNT-T1-GE3

MOSFET N-CH 30V 12A PPAK1212-8

Vishay Siliconix

4,667 -
SIS822DNT-T1-GE3

数据表

- PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 4.5V, 10V 24mOhm @ 7.8A, 10V Surface Mount 2.5V @ 250µA 12 nC @ 10 V 30 V ±20V 435 pF @ 15 V - - PowerPAK® 1212-8 - 15.6W (Tc) -55°C ~ 150°C (TJ)
RJK6012DPE-00#J3

RJK6012DPE-00#J3

MOSFET N-CH 600V 10A 4LDPAK

Renesas Electronics Corporation

7,982 -
RJK6012DPE-00#J3

数据表

- SC-83 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 920mOhm @ 5A, 10V Surface Mount - 30 nC @ 10 V 600 V ±30V 1100 pF @ 25 V - - LDPAK - 100W (Tc) 150°C (TJ)
RJK6012DPP-E0#T2

RJK6012DPP-E0#T2

MOSFET N-CH 600V 10A TO220FP

Renesas Electronics Corporation

2,272 -
RJK6012DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V 920mOhm @ 5A, 10V Through Hole - 30 nC @ 10 V 600 V ±30V 1100 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C (TJ)
DMP3027LFDEQ-13

DMP3027LFDEQ-13

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

6,222 -
DMP3027LFDEQ-13

数据表

- 6-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.5A (Ta) 4.5V, 10V 25mOhm @ 7A, 10V Surface Mount 2.4V @ 250µA 21.8 nC @ 10 V 30 V ±20V 1142 pF @ 15 V AEC-Q101 - U-DFN2020-6 (Type E) Automotive 1W (Ta) -55°C ~ 150°C (TJ)
RJK6013DPP-E0#T2

RJK6013DPP-E0#T2

MOSFET N-CH 600V 11A TO220FP

Renesas Electronics Corporation

9,416 -
RJK6013DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 10V 700mOhm @ 5.5A, 10V Through Hole - 37.5 nC @ 10 V 600 V ±30V 1450 pF @ 25 V - - TO-220FP - 30W (Tc) 150°C (TJ)
RJK6014DPP-E0#T2

RJK6014DPP-E0#T2

MOSFET N-CH 600V 16A TO220FP

Renesas Electronics Corporation

6,263 -
RJK6014DPP-E0#T2

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 10V 575mOhm @ 8A, 10V Through Hole - 45 nC @ 10 V 600 V ±30V 1800 pF @ 25 V - - TO-220FP - 35W (Tc) 150°C (TJ)
RJK6015DPK-00#T0

RJK6015DPK-00#T0

MOSFET N-CH 600V 21A TO3P

Renesas Electronics Corporation

9,069 -
RJK6015DPK-00#T0

数据表

- TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Ta) 10V 360mOhm @ 10.5A, 10V Through Hole - 67 nC @ 10 V 600 V ±30V 2600 pF @ 25 V - - TO-3P - 150W (Tc) 150°C (TJ)
AON7430

AON7430

MOSFET N-CH 30V 13A/34A 8DFN

Alpha & Omega Semiconductor Inc.

7,111 -
AON7430

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 13A (Ta), 34A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 30 V ±20V 910 pF @ 15 V - - 8-DFN-EP (3x3) - 3.1W (Ta), 23W (Tc) -55°C ~ 150°C (TJ)
DMN3016LFDFQ-13

DMN3016LFDFQ-13

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

6,890 -
DMN3016LFDFQ-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 2V @ 250µA 25.1 nC @ 10 V 30 V ±20V 1415 pF @ 15 V AEC-Q101 - U-DFN2020-6 (Type F) Automotive 730mW (Ta) -55°C ~ 150°C (TJ)
RJK6015DPM-00#T1

RJK6015DPM-00#T1

MOSFET N-CH 600V 21A TO3PFM

Renesas Electronics Corporation

8,554 -
RJK6015DPM-00#T1

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 21A (Ta) 10V 360mOhm @ 10.5A, 10V Through Hole - 67 nC @ 10 V 600 V ±30V 2600 pF @ 25 V - - TO-3PFM - 60W (Tc) 150°C (TJ)
DMN2026UVT-13

DMN2026UVT-13

MOSFET N-CH 20V 6.2A TSOT-26

Diodes Incorporated

3,115 -
DMN2026UVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 2.5V, 4.5V 24mOhm @ 6.2A, 4.5V Surface Mount 1.5V @ 250µA 18.4 nC @ 8 V 20 V ±10V 887 pF @ 10 V - - TSOT-23-6 - 1.15W (Ta) -55°C ~ 150°C (TJ)
DMP2109UVTQ-7

DMP2109UVTQ-7

MOSFET BVDSS: 8V~24V TSOT26 T&R

Diodes Incorporated

8,906 -
DMP2109UVTQ-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.7A (Ta) 2.5V, 4.5V 80mOhm @ 2.8A, 4.5V Surface Mount 1V @ 250µA 6 nC @ 4.5 V 20 V ±10V 443 pF @ 10 V AEC-Q101 - TSOT-26 Automotive 1.2W (Ta) -55°C ~ 150°C (TJ)
DMN65D7LFR4-7

DMN65D7LFR4-7

MOSFET BVDSS: 41V~60V X2-DFN1010

Diodes Incorporated

9,187 -
DMN65D7LFR4-7

数据表

- 4-XDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 260mA (Ta) 4.5V, 10V 5Ohm @ 40mA, 10V Surface Mount 2.5V @ 250µA 1.04 nC @ 10 V 60 V ±20V 41 pF @ 30 V - - X2-DFN1010-4 (Type B) - 600mW (Ta) -55°C ~ 150°C (TJ)
FDV304P_NB8U003

FDV304P_NB8U003

MOSFET P-CH 25V 460MA SOT-23

onsemi

9,218 -
FDV304P_NB8U003

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 460mA (Ta) 2.7V, 4.5V 1.1Ohm @ 500mA, 4.5V Surface Mount 1.5V @ 250µA 1.5 nC @ 4.5 V 25 V -8V 63 pF @ 10 V - - SOT-23-3 - 350mW (Ta) -55°C ~ 150°C (TJ)
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