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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
SCT3040KW7TL SICFET N-CH 1200V 56A TO263-7 Rohm Semiconductor	986	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	56A (Tc)	-	52mOhm @ 20A, 18V	Surface Mount	5.6V @ 10mA	107 nC @ 18 V	1200 V	+22V, -4V	1337 pF @ 800 V	-	-	TO-263-7	-	267W	175°C (TJ)
SCT3030ALHRC11 SICFET N-CH 650V 70A TO247N Rohm Semiconductor	445	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	70A (Tc)	18V	39mOhm @ 27A, 18V	Through Hole	5.6V @ 13.3mA	104 nC @ 18 V	650 V	+22V, -4V	1526 pF @ 500 V	AEC-Q101	-	TO-247N	Automotive	262W	175°C (TJ)
STY112N65M5 MOSFET N-CH 650V 96A MAX247 STMicroelectronics	543	-	询价单	数据表	MDmesh™ V	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	96A (Tc)	10V	22mOhm @ 47A, 10V	Through Hole	5V @ 250µA	350 nC @ 10 V	650 V	±25V	16870 pF @ 100 V	-	-	MAX247™	-	625W (Tc)	150°C (TJ)
IXTX8N150L MOSFET N-CH 1500V 8A PLUS247-3 IXYS	256	-	询价单	数据表	Linear	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	20V	3.6Ohm @ 4A, 20V	Through Hole	8V @ 250µA	250 nC @ 15 V	1500 V	±30V	8000 pF @ 25 V	-	-	PLUS247™-3	-	700W (Tc)	-55°C ~ 150°C (TJ)
SCT3040KLHRC11 SICFET N-CH 1200V 55A TO247N Rohm Semiconductor	849	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	55A (Tc)	18V	52mOhm @ 20A, 18V	Through Hole	5.6V @ 10mA	107 nC @ 18 V	1200 V	+22V, -4V	1337 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	262W	175°C (TJ)
S2M0025120D MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	300	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	63A (Tj)	20V	34mOhm @ 50A, 20V	Through Hole	4V @ 15mA	130 nC @ 20 V	1200 V	+25V, -10V	4402 pF @ 1000 V	-	-	TO-247AD	-	446W (Tc)	-55°C ~ 175°C (TJ)
S2M0025120K MOSFET SILICON CARBIDE SIC 1200V SMC Diode Solutions	270	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	63A (Tc)	20V	34mOhm @ 50A, 20V	Through Hole	4V @ 15mA	130 nC @ 20 V	1200 V	+25V, -10V	4402 pF @ 1000 V	-	-	TO-247-4	-	446W (Tc)	-55°C ~ 175°C (TJ)
IXFN80N50Q3 MOSFET N-CH 500V 63A SOT227B IXYS	140	-	询价单	数据表	HiPerFET™, Q3 Class	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	63A (Tc)	10V	65mOhm @ 40A, 10V	Chassis Mount	6.5V @ 8mA	200 nC @ 10 V	500 V	±30V	10000 pF @ 25 V	-	-	SOT-227B	-	780W (Tc)	-55°C ~ 150°C (TJ)
IXTN17N120L MOSFET N-CH 1200V 15A SOT-227B Littelfuse Inc.	240	-	询价单	数据表	Linear	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	20V	900mOhm @ 8.5A, 20V	Chassis Mount	5V @ 250µA	155 nC @ 15 V	1200 V	±30V	8300 pF @ 25 V	-	-	SOT-227B	-	540W (Tc)	-55°C ~ 150°C (TJ)
SCT3022ALHRC11 SICFET N-CH 650V 93A TO247N Rohm Semiconductor	2,246	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	93A (Tc)	18V	28.6mOhm @ 36A, 18V	Through Hole	5.6V @ 18.2mA	133 nC @ 18 V	650 V	+22V, -4V	2208 pF @ 500 V	AEC-Q101	-	TO-247N	Automotive	339W	175°C (TJ)
SCT3030KLHRC11 SICFET N-CH 1200V 72A TO247N Rohm Semiconductor	580	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	72A (Tc)	18V	39mOhm @ 27A, 18V	Through Hole	5.6V @ 13.3mA	131 nC @ 18 V	1200 V	+22V, -4V	2222 pF @ 800 V	AEC-Q101	-	TO-247N	Automotive	339W	175°C (TJ)
IXTB62N50L MOSFET N-CH 500V 62A PLUS264 Littelfuse Inc.	195	-	询价单	数据表	Linear	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	62A (Tc)	20V	100mOhm @ 31A, 20V	Through Hole	5.5V @ 250µA	550 nC @ 20 V	500 V	±30V	11500 pF @ 25 V	-	-	PLUS264™	-	800W (Tc)	-55°C ~ 150°C (TJ)
IRFHM8329TRPBF MOSFET N-CH 30V 16A/57A PQFN Infineon Technologies	7,042	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 57A (Tc)	4.5V, 10V	6.1mOhm @ 20A, 10V	Surface Mount	2.2V @ 25µA	26 nC @ 10 V	30 V	±20V	1710 pF @ 10 V	-	-	PQFN (3x3)	-	2.6W (Ta), 33W (Tc)	-55°C ~ 150°C (TJ)
SI5415EDU-T1-GE3 MOSFET P-CH 20V 25A PPAK Vishay Siliconix	5,204	-	询价单	数据表	TrenchFET®	PowerPAK® ChipFET™ Single	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	25A (Tc)	1.8V, 4.5V	9.8mOhm @ 10A, 4.5V	Surface Mount	1V @ 250µA	120 nC @ 8 V	20 V	±8V	4300 pF @ 10 V	-	-	PowerPAK® ChipFet Single	-	3.1W (Ta), 31W (Tc)	-50°C ~ 150°C (TJ)
DMS3012SFG-13 MOSFET N-CH 30V 12A POWERDI3333 Diodes Incorporated	2,893	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	4.5V, 10V	10mOhm @ 13.5A, 10V	Surface Mount	2.5V @ 250µA	14.7 nC @ 10 V	30 V	±20V	4310 pF @ 15 V	-	Schottky Diode (Body)	POWERDI3333-8	-	890mW (Ta)	-55°C ~ 150°C (TJ)
SIS612EDNT-T1-GE3 MOSFET N-CH 20V 50A PPAK1212-8S Vishay Siliconix	4,854	-	询价单	数据表	TrenchFET®	PowerPAK® 1212-8S	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	50A (Tc)	2.5V, 4.5V	3.9mOhm @ 14A, 4.5V	Surface Mount	1.2V @ 1mA	70 nC @ 10 V	20 V	±12V	2060 pF @ 10 V	-	-	PowerPAK® 1212-8S	-	3.7W (Ta), 52W (Tc)	-55°C ~ 150°C (TJ)
DMN1032UCB4-7 MOSFET N-CH 12V 4.8A U-WLB1010-4 Diodes Incorporated	5,593	-	询价单	数据表	-	4-UFBGA, WLBGA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.8A (Ta)	1.8V, 4.5V	26mOhm @ 1A, 4.5V	Surface Mount	1.2V @ 250µA	4.5 nC @ 4.5 V	12 V	±8V	450 pF @ 6 V	-	-	U-WLB1010-4	-	900mW (Ta)	-55°C ~ 150°C (TJ)
DMN30H4D0LFDE-13 MOSFET N-CH 300V 550MA 6UDFN Diodes Incorporated	3,404	-	询价单	数据表	-	6-PowerUDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	550mA (Ta)	2.7V, 10V	4Ohm @ 300mA, 10V	Surface Mount	2.8V @ 250µA	7.6 nC @ 10 V	300 V	±20V	187.3 pF @ 25 V	-	-	U-DFN2020-6 (Type E)	-	630mW (Ta)	-55°C ~ 150°C (TJ)
MCMN2012-TP MOSFET N-CH 20V 12A DFN2020-6J Micro Commercial Co	6,239	-	询价单	数据表	-	6-WDFN Exposed Pad	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	12A (Ta)	1.2V, 4.5V	11mOhm @ 9.7A, 4.5V	Surface Mount	1V @ 250µA	32 nC @ 5 V	20 V	±10V	1800 pF @ 4 V	-	-	DFN2020-6J	-	-	-55°C ~ 150°C (TJ)
IPN50R950CEATMA1 MOSFET N-CH 500V 6.6A SOT223 Infineon Technologies	2,986	-	询价单	数据表	CoolMOS™ CE	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	6.6A (Tc)	13V	950mOhm @ 1.2A, 13V	Surface Mount	3.5V @ 100µA	10.5 nC @ 10 V	500 V	±20V	231 pF @ 100 V	-	-	PG-SOT223	-	5W (Tc)	-40°C ~ 150°C (TJ)

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